1.
Small
; 11(1): 90-5, 2015 Jan 07.
Artigo
em Inglês
| MEDLINE
| ID: mdl-25136792
RESUMO
The transport characteristics of graphene devices with low n- or p-type carrier density (â¼10(10) -10(11) cm(-2) ), fabricated using a new process that results in minimal organic surface residues, are reported. The p-type molecular doping responsible for the low carrier densities is initiated by aqua regia. The resulting devices exhibit highly developed ν = 2 quantized Hall resistance plateaus at magnetic field strengths of less than 4 T.