Recent Advances in Rolling 2D TMDs Nanosheets into 1D TMDs Nanotubes/Nanoscrolls.

Transition metal dichalcogenides (TMDs) van der Waals (vdW) 1D heterostructures are recently synthesized from 2D nanosheets, which open up new opportunities for potential applications in electronic and optoelectronic devices. The most recent and promising strategies in regards to forming 1D TMDs nanotubes (NTs) or nanoscrolls (NSs) in this review article as well as their heterostructures that are produced from 2D TMDs are summarized. In order to improve the functionality of ultrathin 1D TMDs that are coaxially combined with boron nitride nanotubes and single-walled carbon nanotubes. 1D heterostructured devices perform better than 2D TMD nanosheets when the two devices are compared. The photovoltaic effect in WS2 or MoS2 NTs without a junction may exceed the Shockley-Queisser limit for the above-band-gap photovoltage generation. Photoelectrochemical hydrogen evolution is accelerated when monolayer WS2 or MoS2 NSs are incorporated into a heterojunction. In addition, the photovoltaic performance of the WSe2 /MoS2  NSs junction is superior to that of the performance of MoS2 NSs. The summary of the current research about 1D TMDs can be used in a variety of ways, which assists in the development of new types of nanoscale optoelectronic devices. Finally, it also summarizes the current challenges and prospects.

Versatile surface for solid-solid/liquid-solid triboelectric nanogenerator based on fluorocarbon liquid infused surfaces.

The triboelectric nanogenerator (TENG) is a recent mechanical energy harvesting technology that has been attracting significant attention. Its working principle involves the combination of triboelectrification and electrostatic induction. The TENG can harvest electrical energy from both solid-solid and liquid-solid contact TENGs. Due to their physical difference, triboelectric materials in the solid-solid TENG need to have high mechanical properties and the surface of the liquid-solid contact TENG should repel water. Therefore, the surface of the TENG must be versatile for applications in both solid-solid and liquid-solid contact environments. In this work, we develop a solid-solid/liquid-solid convertible TENG that has a slippery liquid-infused porous surface (SLIPS) at the top of the electrode. The SLIPS consists of a HDFS coated hierarchical Al(OH)3 structure and fluorocarbon liquid. The convertible TENG developed in this study is capable of harvesting electricity from both solid-solid and liquid-solid contacts due to the high mechanical property of Al(OH)3 and the water-based liquid repelling nature of the SLIPS. When the contact occurs in freestanding mode, electrical output was generated through solid-solid/liquid-solid sliding motions. The convertible TENG can harvest electricity from both solid-solid and liquid-solid contacts; thus, it can be a unified solution for TENG surface fabrication.

Large-Area, Ultrathin Metal-Oxide Semiconductor Nanoribbon Arrays Fabricated by Chemical Lift-Off Lithography.

Nanoribbon- and nanowire-based field-effect transistors (FETs) have attracted significant attention due to their high surface-to-volume ratios, which make them effective as chemical and biological sensors. However, the conventional nanofabrication of these devices is challenging and costly, posing a major barrier to widespread use. We report a high-throughput approach for producing arrays of ultrathin (∼3 nm) In2O3 nanoribbon FETs at the wafer scale. Uniform films of semiconducting In2O3 were prepared on Si/SiO2 surfaces via a sol-gel process prior to depositing Au/Ti metal layers. Commercially available high-definition digital versatile discs were employed as low-cost, large-area templates to prepare polymeric stamps for chemical lift-off lithography, which selectively removed molecules from self-assembled monolayers functionalizing the outermost Au surfaces. Nanoscale chemical patterns, consisting of one-dimensional lines (200 nm wide and 400 nm pitch) extending over centimeter length scales, were etched into the metal layers using the remaining monolayer regions as resists. Subsequent etch processes transferred the patterns into the underlying In2O3 films before the removal of the protective organic and metal coatings, revealing large-area nanoribbon arrays. We employed nanoribbons in semiconducting FET channels, achieving current on-to-off ratios over 107 and carrier mobilities up to 13.7 cm2 V-1 s-1. Nanofabricated structures, such as In2O3 nanoribbons and others, will be useful in nanoelectronics and biosensors. The technique demonstrated here will enable these applications and expand low-cost, large-area patterning strategies to enable a variety of materials and design geometries in nanoelectronics.

Interface control in organic electronics using mixed monolayers of carboranethiol isomers.

We employ mixed self-assembled monolayers of carboranethiols to alter the work function of gold and silver systematically. We use isomers of symmetric carboranethiol cage molecules to vary molecular dipole moments and directions, which enable work function tunability over a wide range with minimal alterations in surface energy. Mixed monolayers of carboranethiol isomers provide an ideal platform for the study and fabrication of solution-processed organic field-effect transistors; improved device performance is demonstrated by interface engineering.

Ultrahigh Photoresponsivity of W/Graphene/ß-Ga2O3 Schottky Barrier Deep Ultraviolet Photodiodes.

The integration of graphene with semiconductor materials has been studied for developing advanced electronic and optoelectronic devices. Here, we propose ultrahigh photoresponsivity of ß-Ga2O3 photodiodes with a graphene monolayer inserted in a W Schottky contact. After inserting the graphene monolayer, we found a reduction in the leakage current and ideality factor. The Schottky barrier height was also shown to be about 0.53 eV, which is close to an ideal value. This was attributed to a decrease in the interfacial state density and the strong suppression of metal Fermi-level pinning. Based on a W/graphene/ß-Ga2O3 structure, the responsivity and external quantum efficiency reached 14.49 A/W and 7044%, respectively. These values were over 100 times greater than those of the W contact alone. The rise and delay times of the W/graphene/ß-Ga2O3 Schottky barrier photodiodes significantly decreased to 139 and 200 ms, respectively, compared to those obtained without a graphene interlayer (2000 and 3000 ms). In addition, the W/graphene/ß-Ga2O3 Schottky barrier photodiode was highly stable, even at 150 °C.

Multilevel Reset Dependent Set of a Biodegradable Memristor with Physically Transient.

The electronic device, with its biocompatibility, biodegradability, and ease of fabrication process, shows great potential to embed into health monitoring and hardware data security systems. Herein, polyvinylpyrrolidone (PVP) biopolymer is presented as an active layer, electrochemically active magnesium (Mg) as a metal electrode, and chitosan-based substrate (CHS) to fabricate biocompatible and biodegradable physically transient neuromorphic device (W/Mg/PVP/Mg/CHS). The I-V curve of device is non-volatile bipolar in nature and shows a unique compliance-induced multilevel RESET-dependent-SET behavior while sweeping the compliance current from a few microamperes to milliamperes. Non-volatile and stable switching properties are demonstrated with a long endurance test (100 sweeps) and retention time of over 104  s. The physically transient memristor (PTM) has remarkably high dynamic RON /ROFF (ON/OFF state resistance) ratio (106 Ω), and when placed in deionized (DI) water, the device is observed to completely dissolve within 10 min. The pulse transient measurements demonstrate the neuromorphic computation capabilities of the device in the form of excitatory post synaptic current (EPSC), potentiation, depression, and learning behavior, which resemble the biological function of neurons. The results demonstrate the potential of W/Mg/PVP/Mg/CHS device for use in future healthcare and physically transient electronics.

Control of Ni/ß-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer.

Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a ß-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, and in the series resistance (RS), from 60.3 to 2.90 mΩ.cm2. However, the saturation current (JS) increased from 1.26×10−11 to 8.3×10−7(A/cm2). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky−Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.

Physical Operations of a Self-Powered IZTO/ß-Ga2O3 Schottky Barrier Diode Photodetector.

In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped ß-Ga2O3 by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical simulation was performed by using the measured J-V characteristics of IZTO/ß-Ga2O3 Schottky barrier diodes (SBDs) in the dark. Good agreement between the simulation and the measurement was achieved by studying the effect of the IZTO workfunction, ß-Ga2O3 interfacial layer (IL) electron affinity, and the concentrations of interfacial traps. The IZTO/ß-Ga2O3 (SBDs) was tested at a wavelength of 255 nm with the photo power density of 1 mW/cm2. A high photo-to-dark current ratio of 3.70×105 and a photoresponsivity of 0.64 mA/W were obtained at 0 V as self-powered operation. Finally, with increasing power density the photocurrent increased, and a 17.80 mA/W responsivity under 10 mW/cm2 was obtained.

Ag2O/ß-Ga2O3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability.

Self-powered deep-ultraviolet photodetectors have received considerable attention in recent years because of their efficiency, reliability, and various applications in civilian and military fields. Herein, a Ag/Ag2O layer is continuously deposited on a ß-Ga2O3 epitaxial layer by a facing target sputtering system without opening the chamber, which has an advantage in time and cost. A p-n junction photodetector was constructed through the Ag2O/ß-Ga2O3 heterojunction and by varying the thickness of the Ag film, which was controlled by the sputtering time. The effect of top electrode thickness on the photoresponse characteristics of photodetectors was studied. Because thin Ag films have low surface roughness, indicating low optical loss and good interfacial conditions, photodetectors using a thin Ag film as the top electrode exhibit high photoresponsivity. However, Ag films that were thinner than the threshold thickness, which is the minimum thickness required to form a continuous, homogeneous surface film, exhibited rather low performance owing to the high reflection and scattering caused by the inhomogeneous surface morphology. The as-fabricated photodetector with a 20 nm Ag film presents a high on/off ratio of 3.43 × 108, responsivity and detectivity of 25.65 mA/W and 6.10 × 1011 Jones, respectively, and comparable rise and decay times of 108 and 80 ms, respectively. Additionally, even after three months of storage in an ambient environment, the photoresponse of the photodetector was maintained, indicating good stability in air. These results suggest that Ag2O/ß-Ga2O3 heterojunction-based photodetectors with thin Ag films can be used in various applications requiring deep-ultraviolet detection without an external power supply.

Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on Ag2O/ß-Ga2O3 Heterojunction.

In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/ß-Ga2O3 heterojunction was fabricated by depositing a p-type Ag2O thin film onto an n-type ß-Ga2O3 layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 °C were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 °C, the as-fabricated device had a low leakage current of 4.24 × 10-11 A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photo-responsivity of 12.87 mA/W was obtained at a 100 µW/cm2 light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 × 1011 Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the Ag2O/ß-Ga2O3 heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems.

Reduction of Persistent Photoconduction with IGZO/ZnON-Tandem-Structure Visible-Near-Infrared Phototransistors.

Indium-gallium-zinc oxide- and zinc oxynitride-based heterojunction phototransistors were successfully demonstrated to control the persistent photoconduction (PPC) effect and be also responded sensitively at the range from visible to near-infrared. ZnON plays a key role in extending the spectral response at various frequencies of operation. The devices show significantly different photoresponse and photorecovery characteristics depending on the number of stacked layers of IGZO and ZnON. After negative bias and illumination stress was applied to the devices for 1 h, tandem-structure-based phototransistors recovered remarkably better than single-component IGZO devices. We suggest that the improvements to photoresponse and photorecovery result from the presence of potential wells between two IGZO layers and the energy band alignment of the tandem structure.

Wireless, continuous monitoring of daily stress and management practice via soft bioelectronics.

Stress has become a significant factor, directly affecting human health. Due to the numerous sources of stress that are inevitable in daily life, effective management of stress is essential to maintain a healthy life. Recent advancements in wearable devices allow monitoring stress levels via the detection of galvanic skin response on the skin. Some of these devices show the capability of assessing stress relief methods. However, prior works have been limited in a controlled laboratory setting with a short period assessment (<1 h) of stress intervention. The existing systems' main issues include motion artifacts and discomfort caused by rigid and bulky electronics and mandatory device connection on active fingers. Here, we introduce soft, wireless, skin-like electronics (SKINTRONICS) that offers continuous, portable daily stress and management practice monitoring. The ultrathin, lightweight, all-in-one device captures the change of a subject's stress over six continuous hours during everyday activities, including desk work, cleaning, and resting. At the same time, the SKINTRONICS proves that typical stress alleviation methods (mindfulness and meditation) can reduce stress levels, even in the middle of the day, which is supported by statistical analysis. The low-profile, wireless, gel-free device shows enhanced breathability and minimized motion artifacts compared to a commercial stress monitor. Collectively, this study shows the first demonstration of soft, nanomembrane bioelectronics for long-term, continuous assessment of stress and intervention effectiveness throughout daily life.

Fully Integrated, Stretchable, Wireless Skin-Conformal Bioelectronics for Continuous Stress Monitoring in Daily Life.

Stress is one of the main causes that increase the risk of serious health problems. Recent wearable devices have been used to monitor stress levels via electrodermal activities on the skin. Although many biosensors provide adequate sensing performance, they still rely on uncomfortable, partially flexible systems with rigid electronics. These devices are mounted on either fingers or palms, which hinders a continuous signal monitoring. A fully-integrated, stretchable, wireless skin-conformal bioelectronic (referred to as "SKINTRONICS") is introduced here that integrates soft, multi-layered, nanomembrane sensors and electronics for continuous and portable stress monitoring in daily life. The all-in-one SKINTRONICS is ultrathin, highly soft, and lightweight, which overall offers an ergonomic and conformal lamination on the skin. Stretchable nanomembrane electrodes and a digital temperature sensor enable highly sensitive monitoring of galvanic skin response (GSR) and temperature. A set of comprehensive signal processing, computational modeling, and experimental study provides key aspects of device design, fabrication, and optimal placing location. Simultaneous comparison with two commercial stress monitors captures the enhanced performance of SKINTRONICS in long-term wearability, minimal noise, and skin compatibility. In vivo demonstration of continuous stress monitoring in daily life reveals the unique capability of the soft device as a real-world applicable stress monitor.

Hybrid Integrated Photomedical Devices for Wearable Vital Sign Tracking.

In light of the importance of and challenges inherent in realizing a wearable healthcare platform for simultaneously recognizing, preventing, and treating diseases while tracking vital signs, the development of simple and customized functional devices has been required. Here, we suggest a new approach for making a stretchable light waveguide which can be combined with integrated functional devices, such as organic photodetectors (PDs) and nanowire-based heaters, for multifunctional healthcare monitoring. Controlling the reflection condition of the medium gave a solid design rule for strong light emission in our stretchable waveguides. Based on this rule, the stretchable light waveguide (up to 50% strain) made of polydimethylsiloxane was successfully demonstrated with strong emissions. We also incorporated highly sensitive organic PDs and silver nanowire-based heaters with the stretchable waveguide for the detection of vital signs, including the heart rate, deep breathing, coughs, and blood oxygen saturation. Through these multifunctional performances, we have successfully demonstrated that our stretchable light waveguide has a strong potential for multifunctional healthcare monitoring.

Near-Infrared Photoresponsivity of ZnON Thin-Film Transistor with Energy Band-Tunable Semiconductor.

Amorphous oxide semiconductors have attracted attention in electronic device applications because of their high electrical uniformity over large areas, high mobility, and low-temperature process. However, photonic applications of oxide semiconductors are highly limited because of their larger band gap (over 3.0 eV). Here, we propose low band gap zinc oxynitride semiconductors not only because of their high electrical performance but also their high photoresponsivity in the vis-NIR regions. The optical band gap of zinc oxynitride films, which is in the range of 0.95-1.24 eV, could be controlled easily by changing oxygen and nitrogen ratios during reactive sputtering. Band gap tuned zinc oxynitride-based phototransistors showed significantly different photoresponse following both threshold voltage and drain current changes due to variation in nitrogen-related defect sites.

Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors.

Photochemical reactions in inorganic films, which can be promoted by the addition of thermal energy, enable significant changes in the properties of films. Metaphase films depend significantly on introducing external energy, even at low temperatures. We performed thermal-induced, deep ultraviolet-based, thermal-photochemical activation of metaphase ZnOxNy films at low temperature, and we observed peculiar variations in the nanostructures with phase transformation and densification. The separated Zn3N2 and ZnO nanocrystalline lattice in amorphous ZnOxNy was stabilized remarkably by the reduction of oxygen defects and by the interfacial atomic rearrangement without breaking the N-bonding. On the basis of these approaches, we successfully demonstrated highly flexible, nanocrystalline-ZnOxNy thin-film transistors on polyethylene naphthalate films, and the saturation mobility showed more than 60 cm2 V-1 s-1.

Aptamer-field-effect transistors overcome Debye length limitations for small-molecule sensing.

Detection of analytes by means of field-effect transistors bearing ligand-specific receptors is fundamentally limited by the shielding created by the electrical double layer (the "Debye length" limitation). We detected small molecules under physiological high-ionic strength conditions by modifying printed ultrathin metal-oxide field-effect transistor arrays with deoxyribonucleotide aptamers selected to bind their targets adaptively. Target-induced conformational changes of negatively charged aptamer phosphodiester backbones in close proximity to semiconductor channels gated conductance in physiological buffers, resulting in highly sensitive detection. Sensing of charged and electroneutral targets (serotonin, dopamine, glucose, and sphingosine-1-phosphate) was enabled by specifically isolated aptameric stem-loop receptors.

A combination of selected mapping and clipping to increase energy efficiency of OFDM systems.

We propose an energy efficient combination design for OFDM systems based on selected mapping (SLM) and clipping peak-to-average power ratio (PAPR) reduction techniques, and show the related energy efficiency (EE) performance analysis. The combination of two different PAPR reduction techniques can provide a significant benefit in increasing EE, because it can take advantages of both techniques. For the combination, we choose the clipping and SLM techniques, since the former technique is quite simple and effective, and the latter technique does not cause any signal distortion. We provide the structure and the systematic operating method, and show the various analyzes to derive the EE gain based on the combined technique. Our analysis show that the combined technique increases the EE by 69% compared to no PAPR reduction, and by 19.34% compared to only using SLM technique.

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process.

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO2) dielectric layer are in contact and thermally processed, a Si4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm2 V-1 s-1 and a on/off current ratio over 107 is successfully demonstrated.

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors.

Ultrasensitive field-effect transistor-based biosensors using quasi-two-dimensional metal oxide semiconductors were demonstrated. Quasi-two-dimensional low-dimensional metal oxide semiconductors were highly sensitive to electrical perturbations at the semiconductor-bio interface and showed competitive sensitivity compared with other nanomaterial-based biosensors. Also, the solution process made our platform simple and highly reproducible, which was favorable compared with other nanobioelectronics. A quasi-two-dimensional In2O3-based pH sensor showed a small detection limit of 0.0005 pH and detected the glucose concentration at femtomolar levels. Detailed electrical characterization unveiled how the device's parameters affect the biosensor sensitivity, and lowest detectable charge was extrapolated, which was consistent with the experimental data.