Infrared HOT Photodetectors: Status and Outlook.

At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors. However, the efficiency of thermal detectors is modest: they exhibit a slow response time and are not very useful for multispectral detection. On the other hand, in order to reach better performance (higher detectivity, better response speed, and multispectral response), infrared (IR) photon detectors are used, requiring cryogenic cooling. This is a major obstacle to the wider use of IR technology. For this reason, significant efforts have been taken to increase the operating temperature, such as size, weight and power consumption (SWaP) reductions, resulting in lower IR system costs. Currently, efforts are aimed at developing photon-based infrared detectors, with performance being limited by background radiation noise. These requirements are formalized in the Law 19 standard for P-i-N HgCdTe photodiodes. In addition to typical semiconductor materials such as HgCdTe and type-II AIIIBV superlattices, new generations of materials (two-dimensional (2D) materials and colloidal quantum dots (CQDs)) distinguished by the physical properties required for infrared detection are being considered for future high-operating-temperature (HOT) IR devices. Based on the dark current density, responsivity and detectivity considerations, an attempt is made to determine the development of a next-gen IR photodetector in the near future.

Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids.

The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga2O3 is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.

Advanced Infrared Technology and Applications 2020: introduction to the feature issue.

The 2020 edition of the Applied Optics (AO) special issue on advanced infrared technology and applications (AITA) collects significantly expanded refereed papers presented at the conference of the same name, held in Florence, Italy, 16-19 September 2019. All authors who participated at the conference were contacted and invited to contribute to this special issue. The issue also was expanded to include contributions from other practitioners of IR through direct contact and a call for papers published in AO.

InAsSb-Based Infrared Photodetectors: Thirty Years Later On.

In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector's cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers.

Room-temperature operating means a profound reduction of volume, power consumption, and cost for infrared (IR) photodetectors, which promise a wide range of applications in both military and civilian areas, including individual soldier equipment, automatic driving, etc. Inspired by this fact, since the beginning of 1990s, great efforts have been made in the development of uncooled thermal detectors. During the last two decades, similar efforts have been devoted using IR photon detectors, especially based on photovoltaic effects. Herein, the proven technologies, which have been commercialized with a large format, like InGaAs/InP pin diodes, InAsSb barrier detectors, and high-operating-temperature HgCdTe devices, are reviewed. The newly developed technology is emphasized, which has shown unique superiority in detecting mid-wavelength and long-wavelength IR signals, such as quantum cascade photodetectors. Finally, brand-new concept devices based on 2D materials are introduced, which are demonstrated to provide additional degrees of freedom in designing and fabricating room-temperature IR devices, for example, the construction of multi-heterojunctions without introducing lattice strain, the convenient integration of optical waveguides and electronic gratings. All information provided here aims to supply a full view of the progress and challenges of room-temperature IR detectors.

Performance prediction of p-i-n HgCdTe long-wavelength infrared HOT photodiodes.

Recently, an enhanced computer program was applied to explain in detail the influence of different recombination mechanisms (Auger, radiative, and Shockley-Read-Hall) on the performance of high-operation-temperature, long-wavelength, infrared p-i-n HgCdTe heterojunction photodiodes. It is shown that the photon recycling effect drastically limits the influence of radiative recombination on the performance of small pixel HgCdTe photodiodes. The computer program is based on a solution of the carrier transport equations, as well as the photon transport equations for semiconductor heterostructures. Both the distribution of thermal carrier generation and recombination rates, and spatial photon density distribution in photodiode structures have been obtained. In comparison with two previously published papers in the Journal of Electronics Materials [J. Electron. Mater.45, 4587 (2016)JECMA50361-523510.1007/s11664-016-4566-6 and J. Electron. Mater.46, 6295 (2017)JECMA50361-523510.1007/s11664-017-5736-x], our paper provides an additional insight on the ultimate performance of long-wavelength infrared, high-operation-temperature HgCdTe arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to system optics.

Advanced Infrared Technology and Applications: introduction.

This special issue of Applied Optics on Advanced Infrared Technology and Applications collects significantly expanded refereed papers presented at the conference of the same name, held in Quebec City, Canada, Sept. 27 to Sept. 30, 2017. All the authors who participated at the conference were contacted and invited to contribute to this special issue. Furthermore, the AO dedicated issue on AITA was open to contributions from other practitioners of IR, through direct contact and a call for papers published in AO.

Advances in Infrared Technology and Applications: introduction.

The special issue of Applied Optics on Advanced Infrared Technology and Applications(AITA) arose out of the biannual conference of the same name, most recently held in Pisa, Italy, 29 September to 2 October, 2015.

Perovskite versus Standard Photodetectors.

Perovskites have been largely implemented into optoelectronics as they provide several advantages such as long carrier diffusion length, high absorption coefficient, high carrier mobility, shallow defect levels and finally, high crystal quality. The brisk technological development of perovskite devices is connected to their relative simplicity, high-efficiency processing and low production cost. Significant improvement has been made in the detection performance and the photodetectors' design, especially operating in the visible (VIS) and near-infrared (NIR) regions. This paper attempts to determine the importance of those devices in the broad group of standard VIS and NIR detectors. The paper evaluates the most important parameters of perovskite detectors, including current responsivity (R), detectivity (D*) and response time (τ), compared to the standard photodiodes (PDs) available on the commercial market. The conclusions presented in this work are based on an analysis of the reported data in the vast pieces of literature. A large discrepancy is observed in the demonstrated R and D*, which may be due to two reasons: immature device technology and erroneous D* estimates. The published performance at room temperature is even higher than that reported for typical detectors. The utmost D* for perovskite detectors is three to four orders of magnitude higher than commercially available VIS PDs. Some papers report a D* close to the physical limit defined by signal fluctuations and background radiation. However, it is likely that this performance is overestimated. Finally, the paper concludes with an attempt to determine the progress of perovskite optoelectronic devices in the future.

The Perovskite Optoelectronic Devices - A Look at the Future.

The perovskite materials are broadly incorporated into optoelectronic devices due to a number of advantages. Their rapid technological progress is related to the relatively simple fabrication process, low production cost and high efficiency. Significant improvement is made in the light emitting, detection performance and device design especially operating in the visible and near-infrared regions. This review presents the status and possible future development of the perovskite devices such as solar cells, photodetectors, and light-emitting diodes. The fundamental properties of perovskite materials related to their effective device applications are summarized. Since the development of the perovskite technology is mainly driven by the revolutionary evolution of the semiconductor perovskite solar cell as a robust candidate for next-generation solar energy harvesting, this topic is considered first. The device engineering of various perovskite photodetector structures, including perovskite quantum dot photodetectors, is then discussed in detail. Their performance is compared with the current commercial photodetectors available on the global market together with their challenges. Finally, the considerable progress in the fabrication of the perovskite light-emitting diodes with external quantum efficiency exceeding 20% is presented. The paper is completed in an attempt to determine the development of perovskite optoelectronic devices in the future.

Infrared avalanche photodiodes from bulk to 2D materials.

Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one-optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of AIIIBV, AIIBVI, and potential alternatives to formerly mentioned-"third wave" superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device's performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in AIIIBV APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, "Ga-based" and "Ga-free"), and 2D materials-based IR APDs. The latter-atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed AIIIBV APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs' performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs' active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~105 for MWIR [wavelength, λ = 4 µm, temperature, T = 10-180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance-sensitivity and low excess noise.