Waveguide-integrated silicon T centres.

The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spin qubits, and proven native integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we demonstrate further levels of integration by characterizing T centre spin ensembles in single-mode waveguides in SOI. In addition to measuring long spin T1 times, we report on the integrated centres' optical properties. We find that the narrow homogeneous linewidth of these waveguide-integrated emitters is already sufficiently low to predict the future success of remote spin-entangling protocols with only modest cavity Purcell enhancements. We show that further improvements may still be possible by measuring nearly lifetime-limited homogeneous linewidths in isotopically pure bulk crystals. In each case the measured linewidths are more than an order of magnitude lower than previously reported and further support the view that high-performance, large-scale distributed quantum technologies based upon T centres in silicon may be attainable in the near term.

In-plasma analysis of plasma-surface interactions.

During deposition, modification, and etching of thin films and nanomaterials in reactive plasmas, many active species can interact with the sample simultaneously. This includes reactive neutrals formed by fragmentation of the feed gas, positive ions, and electrons generated by electron-impact ionization of the feed gas and fragments, excited states (in particular, long-lived metastable species), and photons produced by spontaneous de-excitation of excited atoms and molecules. Notably, some of these species can be transiently present during the different phases of plasma processing, such as etching of thin layer deposition. To monitor plasma-surface interactions during materials processing, a new system combining beams of neutral atoms, positive ions, UV photons, and a magnetron plasma source has been developed. This system is equipped with a unique ensemble of in-plasma surface characterization tools, including (1) a Rutherford Backscattering Spectrometer (RBS), (2) an Elastic Recoil Detector (ERD), and (3) a Raman spectroscopy system. RBS and ERD analyses are carried out using a differentially pumped 1.7 MV ion beam line Tandetron accelerator generating a beam at grazing incidence. The ERD system is equipped with an absorber and is specifically used to detect H initially bonded to the surface; higher resolution of surface H is also available through nuclear reaction analysis. In parallel, an optical port facing the substrate is used to perform Raman spectroscopy analysis of the samples during plasma processing. This system enables fast monitoring of a few Raman peaks over nine points scattered on a 1.6 × 1.6 mm2 surface without interference from the inherent light emitted by the plasma. Coupled to the various plasma and beam sources, the unique set of in-plasma surface characterization tools detailed in this study can provide unique time-resolved information on the modification induced by plasma. By using the ion beam analysis capability, the atomic concentrations of various elements in the near-surface (e.g., stoichiometry and impurity content) can be monitored in real-time during plasma deposition or etching. On the other hand, the evolution of Raman peaks as a function of plasma processing time can contribute to a better understanding of the role of low-energy ions in defect generation in irradiation-sensitive materials, such as monolayer graphene.

Disentangling neighbors and extended range density oscillations in monatomic amorphous semiconductors.

High energy x-ray diffraction measurements of pure amorphous Ge were made and its radial distribution function (RDF) was determined at high resolution, revealing new information on the atomic structure of amorphous semiconductors. Fine structure in the second peak in the RDF provides evidence that a fraction of third neighbors are closer than some second neighbors; taking this into account leads to a narrow distribution of tetrahedral bond angles, (8.5 ± 0.1)°. A small peak which appears near 5 Å upon thermal annealing shows that some ordering in the dihedral bond-angle distribution takes place during structural relaxation. Extended range order is detected (in both a-Ge and a-Si) which persists to beyond 20 Å, and both the periodicity and its decay length increase upon thermal annealing. Previously, the effect of structural relaxation was only detected at intermediate range, involving reduced tetrahedral bond-angle distortions. These results enhance our understanding of the atomic order in continuous random networks and place significantly more stringent requirements on computer models intending to describe these networks, or their alternatives which attempt to describe the structure in terms of an arrangement of paracrystals.

Thomson parabola and time-of-flight detector cross-calibration methodology on the ALLS 100 TW laser-driven ion acceleration beamline.

We report on the cross-calibration of Thomson Parabola (TP) and Time-of-Flight (TOF) detectors as particle diagnostics, implemented on the most recent setup of the ALLS 100 TW laser-driven ion acceleration beamline. The Microchannel Plate (MCP) used for particle detection in the TP spectrometer has been calibrated in intensity on the tandem linear accelerator at the Université de Montréal. The experimental data points of the scaling factor were obtained by performing a pixel cluster analysis of single proton impacts on the MCP. A semi-empirical model was extrapolated and fitted to the data to apply the calibration also to higher kinetic energies and to extend it to other ion species. Two TOF lines using diamond detectors, placed at +6° and -9° with respect to the target-normal axis, were benchmarked against the TP spectrometer measurements to determine the field integrals related to its electric and magnetic dispersions. The mean integral proton numbers obtained on the beamline were about 4.1 × 1011 protons/sr with a standard deviation of 15% in the central section of the spectrum around 3 MeV, hence witnessing the high repeatability of the proton bunch generation. The mean maximum energy was of 7.3 ± 0.5 MeV, well in agreement with similar other 100 TW-scale laser facilities, with the best shots reaching 9 MeV and nearly 1012 protons/sr. The used particle diagnostics are compatible with the development of a high-repetition rate targetry due to their fast online readout and are therefore a crucial step in the automation of any beamline.

Fabrication of long-period optical fiber gratings by use of ion implantation.

We report the fabrication of long-period optical fiber gratings by use of a refractive-index increase induced by ion implantation. Helium ions were implanted in an optical fiber core through a metal mask that had a 170-microm -pitch grating with spacing of 60 microm . We obtained a wavelength-dependent effective transmission loss by use of the grating.