Detalhe da pesquisa
1.
Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability.
ACS Appl Electron Mater
; 5(9): 5025-5031, 2023 Sep 26.
Artigo
em Inglês
| MEDLINE | ID: mdl-37779889
2.
Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with xâ¼ 1.
Nanoscale
; 11(36): 16978-16990, 2019 Sep 28.
Artigo
em Inglês
| MEDLINE | ID: mdl-31498350