Detalhe da pesquisa
1.
Multiple increase in the radiative efficiency of 1060-nm laser diodes based on heterostructures with tunnel-coupled injection and a single waveguide mode.
Opt Lett
; 48(2): 203-206, 2023 Jan 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-36638418
2.
Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well.
Appl Opt
; 58(33): 9089-9093, 2019 Nov 20.
Artigo
em Inglês
| MEDLINE | ID: mdl-31873586
3.
Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact.
Opt Express
; 24(15): 16500-11, 2016 Jul 25.
Artigo
em Inglês
| MEDLINE | ID: mdl-27464105
4.
Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980-990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.
Nanomaterials (Basel)
; 13(17)2023 Aug 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-37686894
5.
Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths.
Nanomaterials (Basel)
; 13(20)2023 Oct 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-37887897
6.
High-Power Quantum Cascade Lasers Emitting at 8 µm: Technology and Analysis.
Nanomaterials (Basel)
; 12(22)2022 Nov 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-36432257
7.
Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows.
Nanomaterials (Basel)
; 11(1)2020 Dec 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-33374632
8.
High power CW (16W) and pulse (145W) laser diodes based on quantum well heterostructures.
Spectrochim Acta A Mol Biomol Spectrosc
; 66(4-5): 819-23, 2007 Apr.
Artigo
em Inglês
| MEDLINE | ID: mdl-17270490