Light-to-Hydrogen Improvement Based on Three-Factored Au@CeO2/Gr Hierarchical Photocatalysts.

Recently, various attempts have been made for light-to-fuels conversion, often with limited performance. Herein we report active and lasting three-factored hierarchical photocatalysts consisting of plasmon Au, ceria semiconductor, and graphene conductor for hydrogen production. The Au@CeO2/Gr2.0 entity (graphene outer shell thickness of 2.0 nm) under visible-light irradiation exhibits a colossal achievement (8.0 µmol mgcat-1 h-1), which is 2.2- and 14.3-fold higher than those of binary Au@CeO2 and free-standing CeO2 species, outperforming the currently available catalysts. Yet, it delivers a high maximum quantum yield efficiency of 38.4% at an incident wavelength of 560 nm. These improvements are unambiguously attributed to three indispensable effects: (1) the plasmon resonant energy is light-excited and transferred to produce hot electrons localizing near the surface of Au@CeO2, where (2) the high-surface-area Gr conductive shell will capture them to direct hydrogen evolution reactions, and (3) the active graphene hybridized on the defect-rich surface of Au@CeO2 favorably adsorbs hydrogen atoms, which all bring up thorough insight into the working of a ternary Au@CeO2/Gr catalyst system in terms of light-to-hydrogen conversion.

Enhanced cyclic performance initiated via an in situ transformation of Cu/CuO nanodisk to Cu/CuO/Cu2O nanosponge.

A simple oxidation method for preparing CuO nanodisks on a flexible Cu sheet is presented. The crystal structure of as-prepared CuO nanodisks was analyzed by X-ray diffraction. The elemental composition and surface morphology were documented by X-ray photoelectron spectroscopy, scanning, and transmission electron microscopy. The photocatalytic performance of flexible Cu/CuO nanodisks was tested to mediate the degradation of RhB and MB dyes. After 2nd recycling, an in situ transformation of the nanodisk surface leads to electron transfer between the conduction bands of Cu2O and CuO phase, accelerating the degradation of the dyes due to a more favorable electron-hole separation under different band gap engineering. The optical and electrochemical impedance analyses were conducted to examine the efficiency of photogenerated charge carrier separation. Additionally, in the photodegradation system of Cu/CuO nanodisks, the generation of superoxide radical (·O2-) is responsible for the dye degradation under daylight irradiation. The generation of the latter radical is energetically feasible since the conduction band of Cu2O (- 0.28 eV) is well-matching with the redox potential of O2/·O2- (- 0.28 eV). Consequently, it is concluded that the cyclic stability shows the usefulness of Cu/CuO nanodisk preparation for the dye degradation under daylight irradiation. Graphical abstract.

Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate.

The compound α-Ga2O3 is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thin films because α-Ga2O3 can only grow heteroepitaxially, which results in residual stress generation owing to lattice mismatch and thermal expansion between the substrate and α-Ga2O3. To overcome this, α-Ga2O3 was grown on a conical frustum-patterned sapphire substrate by halide vapor-phase epitaxy. The surface morphology was crack-free and flat. The α-Ga2O3 grown on a frustum-patterned substrate and a conventional sapphire substrate at 500°C exhibited full-width at half-maxima of 961 and 1539 arcsec, respectively, for 10-12 diffraction. For the former substrate, lateral growth on the pattern and threading dislocation bending towards the pattern suppressed the propagation of threading dislocations generated at the interface, which reduced the threading dislocation propagation to the surface by half compared with that on the latter conventional substrate. The results suggest that conical frustum-patterned sapphire substrates have the potential to produce high-quality α-Ga2O3 epilayers.

Synergistic SERS Enhancement in GaN-Ag Hybrid System toward Label-Free and Multiplexed Detection of Antibiotics in Aqueous Solutions.

Noble metal-based surface-enhanced Raman spectroscopy (SERS) has enabled the simple and efficient detection of trace-amount molecules via significant electromagnetic enhancements at hot spots. However, the small Raman cross-section of various analytes forces the use of a Raman reporter for specific surface functionalization, which is time-consuming and limited to low-molecular-weight analytes. To tackle these issues, a hybrid SERS substrate utilizing Ag as plasmonic structures and GaN as charge transfer enhancement centers is presented. By the conformal printing of Ag nanowires onto GaN nanopillars, a highly sensitive SERS substrate with excellent uniformity can be fabricated. As a result, remarkable SERS performance with a substrate enhancement factor of 1.4 × 1011 at 10 fM for rhodamine 6G molecules with minimal spot variations can be realized. Furthermore, quantification and multiplexing capabilities without surface treatments are demonstrated by detecting harmful antibiotics in aqueous solutions. This work paves the way for the development of a highly sensitive SERS substrate by constructing complex metal-semiconductor architectures.