Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructure for Enhanced Radiative Recombinations via Hole Carrier Transfer.

Fabrication of high quantum efficiency nanoscale device is challenging due to increased carrier loss at surface. Low dimensional materials such 0D quantum dots and 2D materials have been widely studied to mitigate the loss. Here, we demonstrate a strong photoluminescence enhancement from graphene/III-V quantum dot mixed-dimensional heterostructures. The distance between graphene and quantum dots in the 2D/0D hybrid structure determines the degree of radiative carrier recombination enhancement from 80% to 800% compared to the quantum dot only structure. Time-resolved photoluminescence decay also shows increased carrier lifetimes when the distance decreases from 50 to 10 nm. We propose that the optical enhancement is due to energy band bending and hole carrier transfer, which repair the imbalance of electron and hole carrier densities in quantum dots. This 2D graphene/0D quantum dot heterostructure shows promise for high performance nanoscale optoelectronic devices.

Transparent Conductive Electrodes of ß-Ga2O3/Ag/ß-Ga2O3 Multilayer for Ultraviolet Emitters.

We investigated the optical and electrical properties of a ß-Ga2O3/Ag/ß-Ga2O3 multilayer transparent conductive electrode deposited on an α-Al2O3 (0001) substrate. For the deposition of a continuous Ag layer, we preliminarily performed anultraviolet-ozone pretreatment of the Ga2O3 bottom layer. To obtain a stable ß-phase of Ga2O3, the ß-Ga2O3/Ag/ß-Ga2O3 multilayer was annealed at 700 °C under N2 atmosphere. The transmittance and sheet resistance of the ß-Ga2O3/Ag/ß-Ga2O3 multilayer were critically affected by the surface morphology and thickness of the Ag interlayer. The multilayer with optimized thicknesses (ß-Ga2O3 top layer: 30 nm; Ag interlayer: 12 nm; ß-Ga2O3 bottom layer: 60 nm) exhibited a resistance of 8.48 Ωsq-1, an average optical transmittance of 87.16% in the ultraviolet wavelength range from 300 to 350 nm, and a figure of merit of 29.81 × 10-3 Ω-1.

Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers.

Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al2O3, considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al2O3-passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

Air-stable few-layer black phosphorus phototransistor for near-infrared detection.

We have demonstrated a few-layer black phosphorus (BP) phototransistor of stable operation in ambient air environment and at near-infrared light (λ = 1550 nm). The air-stable electronic and optoelectronic properties of the few-layer BP phototransistor have been achieved by a proper Al2O3 passivation. The optical identification method and qualitative and quantitative electrical characterizations of the few-layer BP phototransistor in dark state confirmed that the device performance was robust in ambient air, to further chemical treatments, and storage of more than six months. In addition, the low-frequency noise characterizations had revealed that the noise spectral density related to the sensitivity of phototransistor was reduced. Owing to the suppression of interaction between few-layer BP and adsorbates arising from the Al2O3 passivation, a fast rise time of the few-layer BP phototransistor, less than 100 µs, had been observed, demonstrating the intrinsic photoresponse properties of few-layer BP. The low dark current of ∼4 nA at the operation bias and the reasonable responsivity of ∼6 mA W-1 were obtained under the condition lacking adsorbates interactions. Internally, the dark current and responsivity level was tunable by changing the operation bias. Our results are close to the intrinsic properties of the few-layer BP phototransistor, implying that it can be a building block of functioned few-layer BP photodetectors.

Thermal damage suppression of a black phosphorus saturable absorber for high-power operation of pulsed fiber lasers.

Recent studies of black phosphorus (BP) have shown its future potential in the field of photonics. We determined the optical damage threshold of BP at 21.8 dBm in a fiber ring laser cavity, and demonstrated the high-power operation capacity of an evanescent field interaction-based BP saturable absorber. The long-term stability of a passively mode-locked fiber laser with a saturable absorber operating at the optical power of 23.3 dBm was verified for 168 h without any significant performance degradation. The center wavelength, spectral width, and pulse width of the laser output are 1558.8 nm, 14.2 nm, and 805 fs, respectively.

Hand-manageable graphene sticker for ultrafast mode-locked fiber lasers.

We have developed a graphene sticker prepared by simply detaching graphene directly grown on a self-catalytic γ-Al2O3 substrate with a spin-coated polymer film. Our scheme is highlighted by the metal-free and bare-hand manageable process. The sticker is attached onto the flat surface of a D-shaped fiber to demonstrate an efficient fiber mode-locked laser. The 1-ps output pluses have the center wavelength, spectral width, and repetition rate of 1558.2 nm, 5.42 nm, and 4.77 MHz, respectively.

A femtosecond pulse fiber laser at 1935 nm using a bulk-structured Bi2Te3 topological insulator.

We experimentally demonstrate a femtosecond mode-locked, all-fiberized laser that operates in the 2 µm region and that incorporates a saturable absorber based on a bulk-structured bismuth telluride (Bi(2)Te(3)) topological insulator (TI). Our fiberized saturable absorber was prepared by depositing a mechanically exfoliated, ~30 µm-thick Bi(2)Te(3) TI layer on a side-polished optical fiber platform. The bulk crystalline structure of the prepared Bi(2)Te(3) layer was confirmed by Raman and X-ray photoelectron spectroscopy measurements. The modulation depth of the prepared saturable absorber was measured to be ~20.6%. Using the saturable absorber, it is shown that stable, ultrafast pulses with a temporal width of ~795 fs could readily be generated at a wavelength of 1935 nm from a thulium/holmium co-doped fiber ring cavity. This experimental demonstration confirms that bulk structured, TI-based saturable absorbers can readily be used as an ultra-fast mode-locker for 2 µm lasers.

Asymmetric Laser Field Interaction with MXene Coated on the Side Surface of Optical Fibers for Ultrafast Nonlinear Switches.

In recent years, there has been significant interest in researching ultrafast nonlinear optical phenomena involving light-matter interactions in two-dimensional (2D) materials, owing to their potential applications in optics and photonics. MXene, a recently developed 2D material, has garnered considerable attention due to its graphene-like properties and highly tunable electronic/optical characteristics. Herein, we demonstrate ultrafast all-optical switches based on four-wave-mixing (FWM) utilizing the nonlinear optical property of MXene Ti3C2Tx. In order to realize the device, we deposited multilayered Ti3C2Tx in the form of a supernatant solution onto the polished surface of a side-polished optical fiber, enabling the interaction of Ti3C2Tx with the asymmetric evanescent field of the incident input. We systematically characterized the nonlinear optical responses derived from the Ti3C2Tx layers. The fabricated device exhibits notable performance metrics, an enhancement of the extinction ratio, and a conversion efficiency of the newly generated signal, displaying 5.3 and 5.2 dB, respectively. Additionally, the device operates at high modulation frequencies, reaching up to 20 GHz, and demonstrates high-resolution detuning with channel distances of up to 15 nm. Our findings highlight the potential of MXene-based materials for ultrafast optical data management systems.

Ultra-highly sensitive optical gas sensors based on chemomechanical polymer-incorporated fiber interferometer.

We demonstrate a novel optical sensor for use in explosive gas detection, having a simple structure, ultrahigh sensitivity, room-temperature sensing/refreshing operation, and no local power requirements. The sensor relies on a fiber Fabry-Pérot interferometer prepared using poly(4-vinylpyridine), which induces cavity expansion upon absorption of nitrobenzene, thereby shifting the phase matching conditions of the resonating modes. An estimated sensitivity limit as low as 5 ppb was achieved.

Mode-locked pulse generation from an all-fiberized, Tm-Ho-codoped fiber laser incorporating a graphene oxide-deposited side-polished fiber.

An in-depth experimental investigation was conducted into the use of a graphene oxide-based saturable absorber implemented on a side-polished fiber platform for femtosecond pulse generation in the 2 µm region. First, it was experimentally shown that an all-fiberized thulium-holmium (Tm-Ho)-codoped fiber ring laser with reduced cavity length can produce stable femtosecond pulses by incorporating a graphene oxide-deposited side-polished fiber. Second, the measurement accuracy issue in obtaining a precise pulse-width value by use of an autocorrelator together with a silica fiber-based 2 µm-band amplifier was investigated. It showed that the higher-order soliton compression effect caused by the combination of anomalous dispersion and Kerr nonlinearity can provide incorrect pulse-width information. Third, an experimental investigation into the precise role of the graphene oxide-deposited side-polished fiber was carried out to determine whether its polarization-dependent loss (PDL) can be a substantial contributor to mode-locking through nonlinear polarization rotation. By comparing its performance with that of a gold-deposited side-polished fiber, the PDL contribution to mode-locking was found to be insignificant, and the dominant mode-locking mechanism was shown to be saturable absorption due to mutual interaction between the evanescent field of the oscillated beam and the deposited graphene oxide particles.

Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking.

Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz.

The Cell Wall Integrity MAP Kinase Signaling Pathway Is Required for Development, Pathogenicity, and Stress Adaption of the Pepper Anthracnose Fungus Colletotrichum scovillei.

The cell wall integrity (CWI) signaling pathway plays important roles in the dissemination and infection of several plant pathogenic fungi. However, its roles in the pepper fruit anthracnose fungus Colletotrichum scovillei remain uninvestigated. In this study, the major components of the CWI signaling pathway-CsMCK1 (MAPKKK), CsMKK1 (MAPKK), and CsMPS1 (MAPK)-were functionally characterized in C. scovillei via homology-dependent gene replacement. The ΔCsmck1, ΔCsmkk1, and ΔCsmps1 mutants showed impairments in fungal growth, conidiation, and tolerance to CWI and salt stresses. Moreover, ΔCsmck1, ΔCsmkk1, and ΔCsmps1 failed to develop anthracnose disease on pepper fruits due to defects in appressorium formation and invasive hyphae growth. These results suggest that CsMCK1, CsMKK1, and CsMPS1 play important roles in mycelial growth, conidiation, appressorium formation, plant infection, and stress adaption of C. scovillei. These findings will contribute to a better understanding of the roles of the CWI signaling pathway in the development of pepper fruit anthracnose disease.

Graphene-filled hollow optical fiber saturable absorber for efficient soliton fiber laser mode-locking.

We demonstrate a novel in-line saturable absorber based on hollow optical fiber (HOF) filled with graphene composite for high power operation of mode-locked fiber laser. Evanescent field of guided mode propagating in few centimeter-long HOF interacts with the graphene/polyvinyl acetate (PVAc) composite, which enables robust and efficient nonlinear absorption leading to stable passive mode-locking. The mode-locked fiber laser generates soliton pulses with 5.9-nm spectral bandwidth and its maximum output power is measured up to 80 mW. We also observe passive harmonic mode-locking of soliton laser delivering stable pulses with a repetition rate of 506.9 MHz at 33rd harmonics.

Ultrafast optical nonlinearity of multi-layered graphene synthesized by the interface growth process.

We propose a novel photonic application as well as an optical tool to verify the crystallinity of interface-grown graphene demonstrating passive mode-locked lasers. The interface growth process enables the formation of multi-layered graphene at an interface of substrate and catalyst, therefore directly onto the targeted substrate without a transfer process. The synthesized graphene is characterized using Raman spectroscopy and x-ray photoelectron spectroscopy before ultrashort pulse formation to confirm the validity of the process for high-speed photonic applications of graphene. The resultant pulses have a repetition rate, pulse duration, RF extinction ratio of 14.01 MHz, 1.0 ps, and ∼35 dB, respectively.

Q-switched fiber lasers with carbon nanotubes hosted in ceramics.

Q-switched fiber ring lasers operated by single-walled carbon nanotubes (SWNTs) hosted in SiO(2) matrix are demonstrated by highlighting their stable operation and dramatically improved thermal damage threshold. Employing aerosol deposition process, SWNTs are incorporated into the ceramic host at room-temperature without solubility limitation. After experiencing the intracavity optical power higher than 15.3 dBm, the hosted SWNTs survive to provide Q-switching operation. The continuous repetition rate tuning is achieved in the range of 11.1-32.2 kHz with the pulse-duration of 7.1-15.8 µs at 1558.5 nm.

High-performance laser mode-locker with glass-hosted SWNTs realized by room-temperature aerosol deposition.

We preserve optical nonlinear properties of single-walled carbon nanotubes (SWNTs) within SiO2-host employing aerosol deposition (AD) that guarantees the formation of dense ceramic thick films at room temperature without combustion and solubility limitation of the SWNTs. The intact nonlinearity is verified with transmittance check, Raman spectrometry and electron microscopes. As a saturable absorption device, the SiO2-SWNT composite film successfully mode-locks fiber lasers inducing high-quality output pulses with the measured pulse duration and repetition rate of 890 fs and 9.52 MHz, respectively. After experiencing the intracavity power higher than 20 dBm, the hosted SWNTs are survived to function as the pulse formers.

Multi-pulsed white light sintering of printed Cu nanoinks.

Pulse management of white light to maximize the sintering efficiency of a rapid (msec) and substrate-protective method, intense pulsed light (IPL), was studied systematically with a printable Cu nanoink. An excessive pulse energy that induces deleterious defects on the Cu film along with damage on a plastic substrate was dissipated into multiple sub-pulses while maintaining a total energy budget over the threshold level for successful Cu sintering. Electrical properties of the metal layers were analyzed in conjunction with pulse formation factors such as average energy, pulse duration, peak power and pulse number to determine their respective effects on IPL sintering. In the quantitative results, the optimized sintering conditions of copper nanoparticles with a mean diameter of 30 nm and a fixed total irradiated pulse energy of 32 J cm(-2) were a pulse number and pulse width of > 4 and < 3 msec, respectively.

Conformal Graphene Directly Synthesized on a Femtosecond Laser-Scribed In-Fiber Microstructure for High-Energy Ultrafast Optical Pulses.

Despite extensive efforts to explore femtosecond lasers functionalized by nonlinear graphene (Gf) that relies on the traditional transfer process, maximizing the efficiency, customizing the nonlinear interaction, and minimizing the optical loss remain critical challenges, especially in high-energy pulse generation. We demonstrate an ultrafast nonlinear all-fiber device based on conformal Gf directly synthesized in three dimensions on the surface of an in-fiber microstructure. A femtosecond laser-induced selective etching process is used to fabricate a customized microstructure that ensures the minimum but efficient laser-Gf interaction as well as possesses excellent surface conditions to suppress absorption and scattering loss. Conformal Gf is prepared by a spatial diffusion-based atomic carbon spraying process that enables nanocrystals to be synthesized homogeneously even onto the complex surface of the microstructure. The demonstration of high-energy pulses from the Gf saturable absorber highlights its simple, process-efficient, adjustable, and robust performance. The resultant hyperbolic secant pulses display individual pulse energy and peak power of up to 13.2 nJ and 20.17 kW, respectively.

The Small GTPase CsRAC1 Is Important for Fungal Development and Pepper Anthracnose in Colletotrichum scovillei.

The pepper anthracnose fungus, Colletotrichum scovillei, causes severe losses of pepper fruit production in the tropical and temperate zones. RAC1 is a highly conserved small GTP-binding protein in the Rho GTPase family. This protein has been demonstrated to play a role in fungal development, and pathogenicity in several plant pathogenic fungi. However, the functional roles of RAC1 are not characterized in C. scovillei causing anthracnose on pepper fruits. Here, we generated a deletion mutant (ΔCsrac1) via homologous recombination to investigate the functional roles of CsRAC1. The ΔCsrac1 showed pleiotropic defects in fungal growth and developments, including vegetative growth, conidiogenesis, conidial germination and appressorium formation, compared to wild-type. Although ΔCsrac1 was able to develop appressoria, it failed to differentiate appressorium pegs. However, ΔCsrac1 still caused anthracnose disease with significantly reduced rate on wounded pepper fruits. Further analyses revealed that ΔCsrac1 was defective in tolerance to oxidative stress and suppression of host-defense genes. Taken together, our results suggest that CsRAC1 plays essential roles in fungal development and pathogenicity in C. scovillei-pepper fruit pathosystem.

Graphene Self-Phase-Lockers Formed around a Cu Wire Hub for Ring Resonators Incorporated into 57.8 Gigahertz Fiber Pulsed Lasers.

We demonstrate graphene-functionalized self-phase-locking of laser pulses for a dramatically elevated repetition rate by employing an intrinsic resonating structure in a fiber ring laser cavity, the modes thereby satisfying the phase-matching condition passively, through both the resonator and the laser cavity. Graphene is directly synthesized around a 1-mm-diameter Cu wire catalyst, avoiding the deleterious transfer process. The wire provides a form factor to the fiber ring resonator as a versatile winding hub, guaranteeing damage-minimized and recyclable contact of the synthesized graphene with a diameter-controlled optical microfiber. In-depth analysis of the graphene confirms the optical nonlinearity critically required for pulse formation. The laser-graphene interaction, the intermode phase-locking function of graphene, and the pulse formation with the resonator are systematically elucidated to explain the experimentally generated laser pulses at a repetition rate of 57.8 gigahertz (GHz). Additionally, tunability of the repetition rate up to 1.5 GHz by the photothermal effect of graphene is demonstrated.