28.02 W LD side-pumped CW laser operated at 2.8†µm in YSGG/Er:YSGG/YSGG crystal.

We demonstrated a 978 nm laser diode (LD) side-pumped YSGG/Er:YSGG/YSGG composite crystal with a size of Ф 3 mm × 65 mm and continuous-wave (CW) mode. By optimizing resonator length and output mirror transmittance, a maximum output power of 28.02 W is generated, corresponding to slope efficiency of 17.55% and optical-optical efficiency of 12.29%, respectively. The thermal focal lengths are obtained by resonator stability condition. The laser wavelength is centered near 2.8 µm. Moreover, the beam quality factors M x2/M y2 are fitted to be 8.14 and 7.35, respectively. The above results indicate that a high-performance 2.8 µm CW laser can be achieved by LD side-pumped YSGG/Er:YSGG/YSGG composite crystal with excellent heat dissipation ability, which promotes effectively the development and applications of the mid-infrared solid-state lasers.

Polarization switching in a mid-infrared Er:YAlO3 laser.

We report on a polarization-resolved study of mid-infrared emission properties of Er3+-doped orthorhombic yttrium aluminum perovskite YAlO3 single crystal. For the 4I11/2 → 4I13/2 Er3+ transition, the stimulated emission cross section is 0.20 × 10-20 cm2 at 2919 nm for light polarization E ‖ c. Pumped by an Yb-fiber laser at 976 nm, the 10 at.% Er:YAlO3 laser delivered 1.36 W at 2919 nm with a slope efficiency of 31.4%, very close to the Stokes limit, a laser threshold as low as 33 mW and a linear polarization. Pump-induced polarization switching between E || b and E || c eigen states was observed and explained by excited-state absorption from the terminal laser level.

Structure, spectroscopy and laser performance of an Er:YGGAG crystal.

In this work, we report on investigations of structure, spectroscopic properties and laser performances of, what we believe to be, a novel Er:YGGAG laser crystal. High crystalline quality is proved by an FWHW of XRC of 0.019°. Thermal conductivity of a 30 at.% Er:YGGAG crystal is determined as 4.98 W/(m·K). The refractive index is measured in the range of 400 to 1000 nm and fitting with Sellmeier equation is done. A broad fluorescence emission band is located at 2786∼2819 nm, suggesting that this crystal is favorable to realize tunable and ultrafast laser. Under the pump at 969 nm with a fiber-coupled diode laser, at 400 Hz repetition rate and 600 µs pulse duration, the 30 at.% Er:YGGAG delivered maximum average power of 506 mW with overall optical-to-optical efficiency of 12.4% and slope efficiency of 16.9%. The laser beam quality was characterized by M2 factors of 1.53 and 1.39 in horizontal and vertical directions, respectively.

Thermal, spectroscopy and optimized ∼3†µm CW laser properties for Ho,Pr:YAP crystal.

We demonstrate the thermal, spectroscopy and laser properties of Ho,Pr doped YAP crystal grown successfully by Cz method. The thermal expansion coefficient, thermal conductivity, absorption and emission spectra of Ho,Pr:YAP crystal are investigated in detail. Additionally, the level lifetimes suggest that Pr3+ is a suitable deactivating ion for Ho:YAP crystal. Particularly, the actual laser performance is optimized by doping active ion Ho with high concentrations and introducing deactivated Pr3+, resulting in decreased laser threshold, increased laser output power and slope efficiency. A 3.01 µm laser with output power of 502 mW, slope efficiency of 6.3% and beam quality factors of 1.42/1.43 is achieved in the Ho,Pr:YAP crystal, as far as we know this is the highest ∼3 µm CW laser power realized in Ho3+ doped oxide crystals.

13-W and 1000-Hz of a 2.7-µm laser on the 968†nm LD side-pumped Er:YAP crystal with concave end-faces.

We demonstrate a 968-nm LD side-pumped Er:YAP laser with concave end-faces and a working frequency of 50∼1000 Hz. The maximum average powers of 26.75 and 13.18 W are obtained at 250 and 1000 Hz, corresponding to the slope efficiency of 16.2% and 9.0%, respectively. The M2 factors of 7.98 and 1.49 are determined under the multi-mode and single-mode, and three laser wavelengths of 2713, 2732 and 2796 nm are observed. The results indicate that the LD side-pumped Er:YAP crystal with negative curvature end-faces is a promising candidate for the high power and high frequency mid-infrared laser device.

Spectroscopic and laser properties of Er:LuSGG crystal for high-power ∼2.8 µm mid-infrared laser.

We demonstrate a novel Er:LuSGG active gain medium emitting laser wavelength at 2795 nm for the first time. The Er:LuSGG crystal is grown successfully by the Czochralski method with high crystalline and optical quality. The spectra properties, including absorption and fluorescence emission cross-section are presented in contrast with similar Er-doped garnet crystals. The fluorescence lifetimes of the upper (4I11/2) and lower (4I13/2) laser levels are 1.75 and 4.64 ms, respectively. Under 973 nm laser diode pumping, a maximum output power of 789 mW in continuous-wave mode, corresponding to optical-to-optical efficiency of 20.2% and slope efficiency of 24.4%, is achieved with high laser beam quality. The results show that the Er:LuSGG is a promising MIR laser material operated at 2.8 µm.

2.7 µm dual-wavelength laser performance of LD end-pumped Er:YAP crystal.

We demonstrate a laser diode (LD) end-pumped Er:YAP laser with dual-wavelength outputs of 2710 and 2728 nm. The maximum average powers of 739 and 738 mW are achieved in the continuous wave (CW) and pulse modes, which corresponds to optical-to-optical efficiencies of 10.1% and 12.3%, and the slope efficiencies of 12.1% and 13.8%, respectively. In addition, a comparison of laser performance on differently sized crystals indicates that the 1 × 1 × 5 mm3 Er:YAP crystal has a best cooling efficiency. This helps to decrease the thermal lensing effect, which contributes to improving laser efficiency and beam quality.

Laser performance of a 966 nm LD side-pumped Er,Pr:GYSGG laser crystal operated at 2.79 µm.

We demonstrate a 966 nm laser diode (LD) side-pumped Er,Pr:GYSGG laser crystal operated at 2.79 µm under a high repetition rate. The lifetimes of the upper level I11/24 and lower level I13/24 are 0.66 and 0.85 ms, respectively. The laser performance under different repetition rates and pulse widths is experimentally studied with the optimal cavity structure. A maximum output power of 8.86 W is achieved at 125 Hz and 200 µs pulse widths, corresponding to the slope efficiency of 14.8% and electrical-to-optical efficiency of 7.7%. With increasing frequency from 50 to 200 Hz, the slope efficiency varies from 24.7% to 11.7% operated at a 125 µs pulse width. Moreover, the Mx2/My2 factors of 7.52/7.59 and Θx/Θy far-field divergences of 16.1/16.5 mrad are also measured. The results indicate that a high-performance 2.79 µm laser could be realized on the Er,Pr:GYSGG radiation resistant crystal by deactivation and LD side-pumping.

Thermal analysis and laser performance of a GYSGG/Cr,Er,Pr:GYSGG composite laser crystal operated at 2.79 µm.

We demonstrate the thermal analysis and laser performance of a GYSGG/Cr,Er,Pr:GYSGG composite crystal. The lifetime ratio of lower and upper levels of Er3+ in Cr,Er,Pr:GYSGG crystal is further reduced due to the optimized doping concentrations. The thermal effect of composite crystal is lower than that of Cr,Er,Pr:GYSGG crystal. A maximum pulse energy 342.8 mJ operated at 5 Hz and 2.79 µm is obtained on the composite crystal, corresponding to electrical-to-optical efficiency of 0.86% and slope efficiency of 1.08%. Under the same condition, these values on the Cr,Er,Pr:GYSGG crystal are only 315.8 mJ, 0.79% and 1.04%, respectively. Moreover, the composite crystal has also a relative high laser beam quality, exhibiting obvious advantage in reducing thermal effects and improving laser performances.

High performance of a passively Q-switched mid-infrared laser with Bi2Te3/graphene composite SA.

We report passively Q-switched ∼2 and ∼3 µm mid-infrared (MIR) solid-state lasers with a self-assembly solvothermal-synthesized Bi2Te3/graphene heterostructure saturable absorber (SA) for the first time. Based on the oxidation resistance and high thermal conductivity of graphene, and large modulation depth of Bi2Te3 nanosheets, two high-performance Q-switching lasers were realized. One is a Tm:YAP laser with a maximum average output power of 2.34 W and a pulse width of 238 ns at ∼2 µm. The corresponding maximum pulse peak power was 91 W, which was much improved in comparison with the pure graphene-based Tm laser. The other one is an Er:YSGG laser producing a pulse width of 243 ns, which is the shortest among the 2D SAs-based ∼3 µm solid-state lasers, as far as we know. Our results indicate that such a composite Bi2Te3/graphene material is a promising SA for generating high-performance mid-infrared pulse lasers.

Growth, spectroscopy, and laser performance of a 2.79 µm Cr,Er,Pr:GYSGG radiation-resistant crystal.

We demonstrate the growth, spectroscopy, and laser performance of a 2.79 µm Cr,Er,Pr:GYSGG radiation-resistant crystal. The lifetimes for the upper laser level (4)I(11/2) and lower laser level (4)I(13/2) are 0.59 and 0.84 ms, respectively, which are due to the doping of the Pr(3+) ions. A maximum pulse energy of 278 mJ operated at 10 Hz and 2.79 µm is obtained when pumped with a flash lamp, which corresponds to the electrical-to-optical efficiency of 0.6% and a slope efficiency of 0.7%. A maximum average power of 2.9 W at 60 Hz is achieved, which corresponds to the electrical-to-optical efficiency of 0.4% and slope efficiency of 0.8%. Compared with a Cr,Er:YSGG crystal, the Cr,Er,Pr:GYSGG crystal can be operated at a higher pulse repetition rate. These results suggest that doping deactivator Pr(3+) ions can effectively decrease the lower laser level lifetime and improve the laser repetition rate. Therefore, the application fields and range of the Cr,Er,Pr:GYSGG laser can be extended greatly due to its properties of radiation resistance and high repetition frequency.

Passively Q-switched mode locking performance of Nd:GdTaO4 crystal by MoS2 saturable absorber at 1066 nm.

Passively Q-switched mode-locking performance of Nd:GdTaO4 crystal using molybdenum disulfide (MoS2) as a saturable absorber at 1066 nm was demonstrated for the first time. The MoS2 saturable absorber was prepared simply by transferring the MoS2 suspension onto a quartz substrate. By inserting the MoS2 saturable absorber into the Nd:GdTaO4 laser, stable Q-switched modelocked operation can be achieved. At the pump power of 4 W, the maximum average output power of 0.156 W was obtained with the optical conversion efficiency of 3.9%.

Performances of a diode end-pumped GYSGG/Er,Pr:GYSGG composite laser crystal operated at 2.79 µm.

We demonstrate a comparative investigation on Er,Pr:GYSGG and GYSGG/Er,Pr:GYSGG composite crystals at 2.79 µm. Simulating results show the highest temperatures are 369 K and 318 K, respectively. A maximum output power of 825 mW with slope efficiency of 19.2% and maximum laser energy of 3.65 mJ with slope efficiency of 22.7% are obtained in the GYSGG/Er,Pr:GYSGG composite crystal, which have an obvious improvement than those of Er,Pr:GYSGG crystal. The thermal focal lengths are respectively 41 and 62 mm when the pump power is 2.5 W. All these results indicate that the GYSGG/Er,Pr:GYSGG composite crystal has great advantages in reducing the influence of thermal effects and improving laser performances.

Spectroscopic properties and diode end-pumped 2.79 µm laser performance of Er,Pr:GYSGG crystal.

We demonstrate a 968 nm diode end-pumped Er,Pr:GYSGG (Gd1.17Y1.83Sc2Ga3O12) laser at 2.79 µm operated in the pulse and continuous-wave (CW) modes. The lifetimes for the upper laser level 4I11/ 2 and lower level 4I13/2 are 0.52 and 0.60 ms, respectively. The laser produces 284 mW of power in the CW mode, corresponding to the optical-to-optical efficiency of 14.8% and slope efficiency of 17.4%. The maximum laser energy achieved is 2.4 mJ at a repetition rate of 50 Hz and pulse duration of 0.5 ms, corresponding to a peak power of 4.8 W and slope efficiency of 18.3%. These results suggest that doping deactivator Pr3+ ions can effectively decrease the lower-level lifetime and improve the laser efficiency.

2.79 µm high peak power LGS electro-optically Q-switched Cr,Er:YSGG laser.

A flash lamp pumped Cr,Er:YSGG laser utilizing a langasite (LGS) crystal as an electro-optic Q-switch is proposed and demonstrated. It is proved that a LGS crystal with relatively high damage threshold can be used as the electro-optic Q-switch at 2.79 µm, and 216 mJ pulse energy with 14.36 ns pulse width is achieved. Its corresponding peak power of pulse can reach 15 MW, to our knowledge the best result at a 2.79 µm wavelength.

Spectroscopic, diode-pumped laser properties and gamma irradiation effect on Yb, Er, Ho:GYSGG crystals.

We demonstrate a diode end-pumped Yb, Er, Ho:Gd(1.17)Y(1.83)Sc(2)Ga(3)O(12) (GYSGG) laser operated at 2.79 µm in continuous-wave mode. Spectral analysis shows that Yb(3+) and Ho(3+) act as sensitizer and deactivator ions, respectively. Pumping with a 967 nm laser diode produces the maximum output power of 411 mW, corresponding to optical-optical conversion and slope efficiencies of 11.6% and 13.1%, respectively. The minimum laser threshold is only 81 mW because of Ho(3+) doping. The laser properties are only slightly influenced by 100 mrad gamma irradiation. The Yb, Er, Ho:GYSGG crystal possesses excellent radiation resistance and is a potential laser gain medium in radiant environments.

Efficient diode-end-pumped dual-wavelength Nd, Gd:YSGG laser.

We demonstrate a dual-wavelength laser based on a new laser material-Nd, Gd:YSGG, or Nd:GYSGG for short-for the first time to our knowledge. Besides its attractive properties such as antiradiation, high segregation coefficient, etc., this kind of laser crystal also shows excellent laser performance. For continuous-wave operation, the maximum output power is 10.1 W with the absorbed power of 18.45 W at 808 nm, corresponding to the slope efficiency of nearly 60%. The maximum single pulse energy and peak power reach 277 µJ and 4.6 kW (60 ns) when the absorbed pump power is 11.4 W for acousto-optic Q-switched operation.

[Raman spectra analysis of Nd : YAG single crystal and its nano-powder].

In the present paper, the authors measured the Raman spectra of YAG/Nd : YAG single crystal, Nd : YAG precursor and the powder sintered at different temperatures. The bands of these Raman spectra were assigned and analyzed. The results show that there is a structure transformation process in the course of sintering Nd : YAG precursor. The powder sintered at 700 degrees C was amorphous and it is of AlO4 tetrahedron structure. With the increase in sintering temperatures, the Raman spectra varied mainly in two respects. One is the decrease in FWHM with the increase in the bands intensity; the other is the bands shift. These should be due to the increase in the order degree of the interface component. Additionally, the difference in the lattice vibration modes between the powders sintered at 800 degrees C and the Nd : YAG single crystal powder was caused by the contribution of the interface component.

Non-destructive evaluation of UV pulse laser-induced damage performance of fused silica optics.

The surface laser damage performance of fused silica optics is related to the distribution of surface defects. In this study, we used chemical etching assisted by ultrasound and magnetorheological finishing to modify defect distribution in a fused silica surface, resulting in fused silica samples with different laser damage performance. Non-destructive test methods such as UV laser-induced fluorescence imaging and photo-thermal deflection were used to characterize the surface defects that contribute to the absorption of UV laser radiation. Our results indicate that the two methods can quantitatively distinguish differences in the distribution of absorptive defects in fused silica samples subjected to different post-processing steps. The percentage of fluorescence defects and the weak absorption coefficient were strongly related to the damage threshold and damage density of fused silica optics, as confirmed by the correlation curves built from statistical analysis of experimental data. The results show that non-destructive evaluation methods such as laser-induced fluorescence and photo-thermal absorption can be effectively applied to estimate the damage performance of fused silica optics at 351 nm pulse laser radiation. This indirect evaluation method is effective for laser damage performance assessment of fused silica optics prior to utilization.

[Calculation of spectroscopic parameters of highly doped Er3+ in lithium niobate].

A highly doped Er3+: LiNbO3 (concentration 6 mol%) crystal was grown successfully by Czochralski method. The crystal is higher than that of the lowly doped Er3+ in LiNbO3 crystal, which is helpful to improve absorption coefficient of the grown the pumping efficiency. The absorption spectra at two unpolarized directions (X and Z) and two polarized directions (E parallel Z, E perpendicular Z) were measured. Using the Judd-Ofelt theory, and according to the measured absorption spectra, the intensity parameters omegalambda of Er3+ were fitted. The results of root-mean square (r. m. s) deviation show that the error of polarized fitting is less than that of unpolarized one. Thus fluorescence transition probabilities (Ajj), radioactive lifetime (tau), fluorescence branching ratio (beta), and integrated emission cross section (sigmap) were calculated and accepted according to the polarized results, and were also discussed and compared with the ones reported in the literature.