RESUMO
The paper introduces a silica-on-silicon monolithic integrated cyclic arrayed waveguide grating (AWG) with Mach-Zehnder interference (MZI) filters and arrayed vertical reflecting mirrors in silicon to realize effective and stable optical transmission between waveguides and photodiodes. The cyclic AWG acts as both multiplexer over the L-band for upstream traffic and demultiplexer over the C-band for downstream traffic. The integrated chip, including AWG, MZI filters, and arrayed reflecting mirrors, has been made successfully with a 6.0 dB insertion loss, which is less than the discrete devices. At the same time, the arrayed reflecting mirrors are more stable than separate reflectors.
RESUMO
In this paper, a unique device that can act as both multiplexer and demultiplexer is proposed with two all-metal compensating rods that makes the compensated chip almost the same spectrum profile as the original one. In this way a flat-top athermal arrayed-waveguide grating module of 100-GHz×40-ch is successfully fabricated. A small center wavelength shift of ±25 pm is achieved for the ultra-wide temperature range from -40°C to 85°C with the low insertion loss change of less than ±0.14 dB.
RESUMO
The integration of metasurfaces and optical waveguides is gradually attracting the attention of researchers because it allows for more efficient manipulation and guidance of light. However, most of the existing studies focus on passive devices, which lack dynamic modulation. This work utilizes the meta-waveguides with liquid crystal(LC) to modulate the on-chip spectrum, which is the first experimentally verified, to the authors' knowledge. By applying a voltage, the refractive index of the liquid crystal surrounding the meta-waveguides can be tuned, resulting in a blue shift of the spectrum. The simulation shows that the 18.4 dB switching ratio can be achieved at 1550 nm. The meta-waveguides are prepared using electron beam lithography (EBL), and the improved transmittance of the spectrum in the short wavelength is experimentally verified, which is consistent with the simulation trend. At 1551.64 nm wavelength, the device achieves a switching ratio of ≈16 dB with an active area of 8 µm × 0.4 µm. Based on this device, an optoelectronic computing architecture for the Hadamard matrix product and a novel wavelength selection switch are proposed. This work offers a promising avenue for on-chip dynamic modulation in integrated photonics, which has the advantage of a compact active area, fast response time, and low energy consumption compared to conventional thermal-light modulation.