Effect of heat treatments on superconducting properties and connectivity in K-doped BaFe2As2.

Fe-based superconductors and in particular K-doped BaFe2As2 (K-Ba122) are materials of interest for possible future high-field applications. However the critical current density (Jc) in polycrystalline Ba122 is still quite low and connectivity issues are suspected to be responsible. In this work we investigated the properties of high-purity, carefully processed, K-Ba122 samples synthesized with two separate heat treatments at various temperatures between 600 and 825 °C. We performed specific heat characterization and Tc-distribution analysis up to 16 T and we compared them with magnetic Tc and Jc characterizations, and transmission-electron-microscopy (TEM) microstructures. We found no direct correlation between the magnetic Tc and Jc, whereas the specific heat Tc-distributions did provide valuable insights. In fact the best Jc-performing sample, heat treated first at 750 °C and then at 600 °C, has the peak of the Tc-distributions at the highest temperatures and the least field sensitivity, thus maximizing Hc2. We also observed that the magnetic Tc onset was always significantly lower than the specific heat Tc: although we partially ascribe the lower magnetization Tc to the small grain size (< λ, the penetration depth) of the K-Ba122 phase, this behaviour also implies the presence of some grain-boundary barriers to current flow. Comparing the Tc-distribution with Jc, our systematic synthesis study reveals that increasing the first heat treatment above 750 °C or the second one above 600 °C significantly compromises the connectivity and suppresses the vortex pinning properties. We conclude that high-purity precursors and clean processing are not yet enough to overcome all Jc limitations. However, our study suggests that a higher temperature Tc-distribution, a larger Hc2 and a better connectivity could be achieved by lowering the second heat treatment temperature below 600 °C thus enhancing, as a consequence, Jc.

Origin of the enhanced Nb3Sn performance by combined Hf and Ta doping.

In recent years there has been an increasing effort in improving the performance of Nb3Sn for high-field applications, in particular for the fabrication of conductors suitable for the realization of the Future Circular Collider (FCC) at CERN. This challenging task has led to the investigation of new routes to advance the high-field pinning properties, the irreversibility and the upper critical fields (HIrr and Hc2, respectively). The effect of hafnium addition to the standard Nb-4Ta alloy has been recently demonstrated to be particularly promising and, in this paper, we investigate the origins of the observed improvements of the superconducting properties. Electron microscopy, Extended X-ray Absorption Fine Structure Spectroscopy (EXAFS) and Atom Probe Tomography (APT) characterization clearly show that, in presence of oxygen, both fine Nb3Sn grains and HfO2 nanoparticles form. Although EXAFS is unable to detect significant amounts of Hf in the A15 structure, APT does indeed reveal some residual intragrain metallic Hf. To investigate the layer properties in more detail, we created a microbridge from a thin lamella extracted by Focused Ion Beam (FIB) and measured the transport properties of Ta-Hf-doped Nb3Sn. Hc2(0) is enhanced to 30.8 T by the introduction of Hf, ~ 1 T higher than those of only Ta-doped Nb3Sn, and, even more importantly the position of the pinning force maximum exceeds 6 T, against the typical ~ 4.5-4.7 T of the only Ta-doped material. These results show that the improvements generated by Hf addition can significantly enhance the high-field performance, bringing Nb3Sn closer to the requirements necessary for FCC realization.

Microscopic origin of highly enhanced current carrying capabilities of thin NdFeAs(O,F) films.

Fe-based superconductors present a large variety of compounds whose physical properties strongly depend on the crystal structure and chemical composition. Among them, the so-called 1111 compounds show the highest critical temperature T c in the bulk form. Here we demonstrate the realization of excellent superconducting properties in NdFeAs(O1-x F x ). We systematically investigated the correlation between the microstructure at the nanoscale and superconductivity in an epitaxial 22 nm NdFeAs(O1-x F x ) thin film on a MgO single crystalline substrate (T c = 44.7 K). Atomic resolution analysis of the microstructure by transmission electron microscopy and atom probe tomography identified several defects and other inhomogeneities at the nanoscale that can act as extrinsic pinning centers. X-Ray diffraction and transmission electron microscopy displayed a broad variation of the a-axis lattice parameter either due to a partially strained layer at the interface to the substrate, high local strain at dislocation arrays, mosaicity, or due to composition variation within the film. The electrical transport properties are substantially affected by intrinsic pinning and a matching field corresponding to the film thickness and associated with the Bean-Livingston surface barrier of the surfaces. The thin film showed a self-field critical current density J c(4.2 K) of ∼7.6 MA cm-2 and a record pinning force density of F p ≈ 1 TN m-3 near 35 T for H‖ab at 4.2 K. These investigations highlight the role of the microstructure in fine-tuning and possibly functionalizing the superconductivity of Fe-based superconductors.

Evidence from EXAFS for Different Ta/Ti Site Occupancy in High Critical Current Density Nb3Sn Superconductor Wires.

To meet critical current density, J c , targets for the Future Circular Collider (FCC), the planned replacement for the Large Hadron Collider (LHC), the high field performance of Nb3Sn must be improved, but champion J c values have remained static for the last 10 years. Making the A15 phase stoichiometric and enhancing the upper critical field H c2 by Ti or Ta dopants are the standard strategies for enhancing high field performance but detailed recent studies show that even the best modern wires have broad composition ranges. To assess whether further improvement might be possible, we employed Extended X-ray Absorption Fine Structure (EXAFS) to determine the lattice site location of dopants in modern high-performance Nb3Sn strands with J c values amongst the best so far achieved. Although Ti and Ta primarily occupy the Nb sites in the A15 structure, we also find significant Ta occupancy on the Sn site. These findings indicate that the best performing Ti-doped stand is strongly sub-stoichiometric in Sn and that antisite disorder likely explains its high average H c2 behavior. These new results suggest an important role for dopant and antisite disorder in minimizing superconducting property distributions and maximizing high field J c properties.

High-field transport properties of a P-doped BaFe2As2 film on technical substrate.

High temperature (high-Tc) superconductors like cuprates have superior critical current properties in magnetic fields over other superconductors. However, superconducting wires for high-field-magnet applications are still dominated by low-Tc Nb3Sn due probably to cost and processing issues. The recent discovery of a second class of high-Tc materials, Fe-based superconductors, may provide another option for high-field-magnet wires. In particular, AEFe2As2 (AE: Alkali earth elements, AE-122) is one of the best candidates for high-field-magnet applications because of its high upper critical field, Hc2, moderate Hc2 anisotropy, and intermediate Tc. Here we report on in-field transport properties of P-doped BaFe2As2 (Ba-122) thin films grown on technical substrates by pulsed laser deposition. The P-doped Ba-122 coated conductor exceeds a transport Jc of 105 A/cm2 at 15 T for main crystallographic directions of the applied field, which is favourable for practical applications. Our P-doped Ba-122 coated conductors show a superior in-field Jc over MgB2 and NbTi, and a comparable level to Nb3Sn above 20 T. By analysing the E - J curves for determining Jc, a non-Ohmic linear differential signature is observed at low field due to flux flow along the grain boundaries. However, grain boundaries work as flux pinning centres as demonstrated by the pinning force analysis.

High field superconducting properties of Ba(Fe1-xCox)2As2 thin films.

In general, the critical current density, Jc, of type II superconductors and its anisotropy with respect to magnetic field orientation is determined by intrinsic and extrinsic properties. The Fe-based superconductors of the '122' family with their moderate electronic anisotropies and high yet accessible critical fields (Hc2 and Hirr) are a good model system to study this interplay. In this paper, we explore the vortex matter of optimally Co-doped BaFe2As2 thin films with extended planar and c-axis correlated defects. The temperature and angular dependence of the upper critical field is well explained by a two-band model in the clean limit. The dirty band scenario, however, cannot be ruled out completely. Above the irreversibility field, the flux motion is thermally activated, where the activation energy U0 is going to zero at the extrapolated zero-kelvin Hirr value. The anisotropy of the critical current density Jc is both influenced by the Hc2 anisotropy (and therefore by multi-band effects) as well as the extended planar and columnar defects present in the sample.

Oxypnictide SmFeAs(O,F) superconductor: a candidate for high-field magnet applications.

The recently discovered oxypnictide superconductor SmFeAs(O,F) is the most attractive material among the Fe-based superconductors due to its highest transition temperature of 56 K and potential for high-field performance. In order to exploit this new material for superconducting applications, the knowledge and understanding of its electro-magnetic properties are needed. Recent success in fabricating epitaxial SmFeAs(O,F) thin films opens a great opportunity to explore their transport properties. Here we report on a high critical current density of over 10(5) A/cm(2) at 45 T and 4.2 K for both main field orientations, feature favourable for high-field magnet applications. Additionally, by investigating the pinning properties, we observed a dimensional crossover between the superconducting coherence length and the FeAs interlayer distance at 30-40 K, indicative of a possible intrinsic Josephson junction in SmFeAs(O,F) at low temperatures that can be employed in electronics applications such as a terahertz radiation source and a superconducting Qubit.