Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene.

Graphene-based, high-quality, two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity1-21. Specifically, superconductivity has been observed in both electron- and hole-doped twisted graphene moiré systems1-17, whereas in crystalline graphene systems, superconductivity has so far been observed only in hole-doped rhombohedral trilayer graphene (RTG)18 and hole-doped Bernal bilayer graphene (BBG)19-21. Recently, enhanced superconductivity has been demonstrated20,21 in BBG because of the proximity to a monolayer WSe2. Here we report the observation of superconductivity and a series of flavour-symmetry-breaking phases in electron- and hole-doped BBG/WSe2 devices by electrostatic doping. The strength of the observed superconductivity is tunable by applied vertical electric fields. The maximum Berezinskii-Kosterlitz-Thouless transition temperature for the electron- and hole-doped superconductivity is about 210 mK and 400 mK, respectively. Superconductivities emerge only when the applied electric fields drive the BBG electron or hole wavefunctions towards the WSe2 layer, underscoring the importance of the WSe2 layer in the observed superconductivity. The hole-doped superconductivity violates the Pauli paramagnetic limit, consistent with an Ising-like superconductor. By contrast, the electron-doped superconductivity obeys the Pauli limit, although the proximity-induced Ising spin-orbit coupling is also notable in the conduction band. Our findings highlight the rich physics associated with the conduction band in BBG, paving the way for further studies into the superconducting mechanisms of crystalline graphene and the development of superconductor devices based on BBG.

Rashba-splitting-induced topological flat band detected by anomalous resistance oscillations beyond the quantum limit in ZrTe5.

Topological flat bands - where the kinetic energy of electrons is quenched - provide a platform for investigating the topological properties of correlated systems. Here, we report the observation of a topological flat band formed by polar-distortion-assisted Rashba splitting in the three-dimensional Dirac material ZrTe5. The polar distortion and resulting Rashba splitting on the band are directly detected by torque magnetometry and the anomalous Hall effect, respectively. The local symmetry breaking further flattens the band, on which we observe resistance oscillations beyond the quantum limit. These oscillations follow the temperature dependence of the Lifshitz-Kosevich formula but are evenly distributed in B instead of 1/B at high magnetic fields. Furthermore, the cyclotron mass gets anomalously enhanced about 102 times at fields ~ 20 T. Our results provide an intrinsic platform without invoking moiré or order-stacking engineering, which opens the door for studying topologically correlated phenomena beyond two dimensions.

Tunable even- and odd-denominator fractional quantum Hall states in trilayer graphene.

Fractional quantum Hall (FQH) states are exotic quantum many-body phases whose elementary charged excitations are anyons obeying fractional braiding statistics. While most FQH states are believed to have Abelian anyons, the Moore-Read type states with even denominators - appearing at half filling of a Landau level (LL) - are predicted to possess non-Abelian excitations with appealing potential in topological quantum computation. These states, however, depend sensitively on the orbital contents of the single-particle LL wavefunctions and the LL mixing. Here we report magnetotransport measurements on Bernal-stacked trilayer graphene, whose multiband structure facilitates interlaced LL mixing, which can be controlled by external magnetic and displacement fields. We observe robust FQH states including even-denominator ones at filling factors ν = - 9/2, - 3/2, 3/2 and 9/2. In addition, we fine-tune the LL mixing and crossings to drive quantum phase transitions of these half-filling states and neighbouring odd-denominator ones, exhibiting related emerging and waning behaviour.

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films.

The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to the high-temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties.

Versatile Method of Engineering the Band Alignment and the Electron Wavefunction Hybridization of Hybrid Quantum Devices.

Hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the integration of the properties of both materials, which relies on the interface details and the resulting coupling strength and wavefunction hybridization. However, until now, none of the experiments have reported good control of the band alignment of the interface, as well as its tunability to the coupling and hybridization. Here, the interface is modified by inducing specific argon milling while maintaining its high quality, e.g., atomic connection, which results in a large induced superconducting gap and ballistic transport. By comparing with Schrödinger-Poisson calculations, it is proven that this method can vary the band bending/coupling strength and the electronic spatial distribution. In the strong coupling regime, the coexistence and tunability of crossed Andreev reflection and elastic co-tunneling-key ingredients for the Kitaev chain-are confirmed. This method is also generic for other materials and achieves a hard and huge superconducting gap in lead and indium antimonide nanowire (Pb-InSb) devices. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems.

Observation of 1D Fermi arc states in Weyl semimetal TaAs.

Fermi arcs on Weyl semimetals exhibit many exotic quantum phenomena. Usually found on atomically flat surfaces with approximate translation symmetry, Fermi arcs are rooted in the peculiar topology of bulk Bloch bands of 3D crystals. The fundamental question of whether a 1D Fermi arc can be probed remains unanswered. Such an answer could significantly broaden potential applications of Weyl semimetals. Here, we report a direct observation of robust edge states on atomic-scale ledges in TaAs using low-temperature scanning tunneling microscopy/spectroscopy. Spectroscopic signatures and theoretical calculations reveal that the 1D Fermi arcs arise from the chiral Weyl points of bulk crystals. The crossover from 2D Fermi arcs to eventual complete localization on 1D edges was arrested experimentally on a sequence of surfaces. Our results demonstrate extreme robustness of the bulk-boundary correspondence, which offers topological protection for Fermi arcs, even in cases in which the boundaries are at the atomic-scale. The persistent 1D Fermi arcs can be profitably exploited in miniaturized quantum devices.

Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe.

The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising applications of unusual magnetoresistance (MR) properties. Herein, we systematically investigated the anisotropic MR in the newly-discovered Dirac node-line material ZrSiSe. By applying a magnetic field of 3 T by a vector field, three-dimensional (3D) MR shows the strong anisotropy. The MR ratio of maximum and minimum directions reaches 7 at 3 T and keeps increasing at the higher magnetic field. The anisotropic MR forms a butterfly-shaped curve, indicating the quasi-2D electronic structures. This is further confirmed by the angular dependent Shubnikov-de Haas oscillations. The first-principles calculations establish the quasi-2D tubular-shaped Fermi surface near the X point in the Brillouin zone. Our finding sheds light on the 3D mapping of MR and the potential applications in magnetic sensors based on ZrSiSe.

Signatures of the Adler-Bell-Jackiw chiral anomaly in a Weyl fermion semimetal.

Weyl semimetals provide the realization of Weyl fermions in solid-state physics. Among all the physical phenomena that are enabled by Weyl semimetals, the chiral anomaly is the most unusual one. Here, we report signatures of the chiral anomaly in the magneto-transport measurements on the first Weyl semimetal TaAs. We show negative magnetoresistance under parallel electric and magnetic fields, that is, unlike most metals whose resistivity increases under an external magnetic field, we observe that our high mobility TaAs samples become more conductive as a magnetic field is applied along the direction of the current for certain ranges of the field strength. We present systematically detailed data and careful analyses, which allow us to exclude other possible origins of the observed negative magnetoresistance. Our transport data, corroborated by photoemission measurements, first-principles calculations and theoretical analyses, collectively demonstrate signatures of the Weyl fermion chiral anomaly in the magneto-transport of TaAs.