Selective adsorption of organosilane molecules along step edges of atomically flattened Si(111) surfaces.

We investigate the selective adsorption of organosilane molecules (3-aminopropyltriethoxysilane (APTES) and octadecyltrichlorosilane (OTS)) at the step edges of a flattened Si(111) surface by atomic force microscopy. The flattened Si(111) surface is formed by dipping a vicinal Si(111) wafer into ultralow-dissolved-oxygen water after treatment with HF. The selective adsorption of these organosilanes is achieved only when the Si(111) sample is pretreated with a Cu-containing solution to form Cu wires along the step edges of the Si(111) surface. This is probably due to the simultaneous formation of one-dimensional Si oxide covered with hydroxyl (OH) groups underneath Cu wires during the electroless reduction of Cu ions in water. At the step edges, APTES and OTS molecules are adsorbed as disperse clusters and as rows of bumps, respectively. The reason for this difference is still unclear, but a key factor is probably the control of the moisture content in the environment. The step edges, which are functionalized by organosilane molecules with various terminations such as -NH2 and -CH3, are expected to be utilized in novel nanoscale devices and processes.

Characterization of terraces and steps on Cl-terminated Ge(111) surfaces after HCl treatment in N2 ambient.

Germanium (Ge) is a promising substrate for semiconductor devices in the near future. However, wet-chemical preparations that enable the control of the structure of the Ge surface have not yet been developed. In this study, the surface structure of Ge(111) after HCl treatment is characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and scanning tunneling microscopy (STM). XPS spectra revealed that purging with inert gas, such as nitrogen, is necessary to obtain a Ge surface free of oxide, probably because dissolved oxygen from air rapidly oxidizes the surface. Cl-terminated Ge surfaces are microscopically rough, but are composed of terraces and steps, as revealed by magnified STM images. Step edges run not along specific directions reflecting the crystallographic nature of the (111) surface but randomly. Many atomic-scale protrusions with the height of around 0.1 nm are dispersed on terraces. They are likely to be impurities such as carbon contaminants and water on Cl-terminated terraces attracted by Cl atoms with high electronegativity.

Absolute flatness measurements of silicon mirrors by a three-intersection method by near-infrared interferometry.

Absolute flatness of three silicon plane mirrors have been measured by a three-intersection method based on the three-flat method using a near-infrared interferometer. The interferometer was constructed using a near-infrared laser diode with a 1,310-nm wavelength light where the silicon plane mirror is transparent. The height differences at the coordinate values between the absolute line profiles by the three-intersection method have been evaluated. The height differences of the three flats were 4.5 nm or less. The three-intersection method using the near-infrared interferometer was useful for measuring the absolute flatness of the silicon plane mirrors.

Profile measurement of concave spherical mirror and a flat mirror using a high-speed nanoprofiler.

Ultraprecise aspheric mirrors that offer nanofocusing and high coherence are indispensable for developing third-generation synchrotron radiation and X-ray free-electron laser sources. In industry, the extreme ultraviolet (wavelength: 13.5 nm) lithography used for high-accuracy aspheric mirrors is a promising technology for fabricating semiconductor devices. In addition, ultraprecise mirrors with a radius of curvature of less than 10 mm are needed in many digital video instruments. We developed a new type of nanoprofiler that traces the normal vector of a mirror's surface. The principle of our measuring method is that the normal vector at each point on the surface is determined by making the incident light beam on the mirror surface and the reflected beam at that point coincide, using two sets of two pairs of goniometers and one linear stage. From the acquired normal vectors and their coordinates, the three-dimensional shape is calculated by a reconstruction algorithm. The characteristics of the measuring method are as follows: the profiler uses the straightness of laser light without using a reference surface. Surfaces of any shape can be measured, and there is no limit on the aperture size. We calibrated this nanoprofiler by considering the system error resulting from the assembly error and encoder scale error, and evaluated the performance at the nanometer scale. We suppressed the effect of random errors by maintaining the temperature in a constant-temperature room within ±0.01°C. We measured a concave spherical mirror with a radius of curvature of 400 mm and a flat mirror and compared the results with those obtained using a Fizeau interferometer. The profiles of the mirrors were consistent within the range of system errors.

Metal-assisted chemical etching of Ge(100) surfaces in water toward nanoscale patterning.

We propose the metal-assisted chemical etching of Ge surfaces in water mediated by dissolved oxygen molecules (O2). First, we demonstrate that Ge surfaces around deposited metallic particles (Ag and Pt) are preferentially etched in water. When a Ge(100) surface is used, most etch pits are in the shape of inverted pyramids. The mechanism of this anisotropic etching is proposed to be the enhanced formation of soluble oxide (GeO2) around metals by the catalytic activity of metallic particles, reducing dissolved O2 in water to H2O molecules. Secondly, we apply this metal-assisted chemical etching to the nanoscale patterning of Ge in water using a cantilever probe in an atomic force microscopy setup. We investigate the dependences of probe material, dissolved oxygen concentration, and pressing force in water on the etched depth of Ge(100) surfaces. We find that the enhanced etching of Ge surfaces occurs only when both a metal-coated probe and saturated-dissolved-oxygen water are used. In this study, we present the possibility of a novel lithography method for Ge in which neither chemical solutions nor resist resins are needed.

Metal-insulator-gap-insulator-semiconductor structure for sensing devices.

We report on the use of sensing devices that have a metal-insulator-gap-insulator-semiconductor structure. We have used capacitance-voltage measurements from a metal-insulator-gap-insulator-semiconductor sensing device to characterize different pH solutions and deoxyribonucleic acid (DNA) solutions. Hysteresis in the capacitance-voltage curves results from mobile ionic charges in the solutions and the influence of changes on the sensing surface condition. As the pH decreases in the pH range of 2.7 to 7.0, the flatband voltage shift toward the negative voltage increases. The differences in the flatband voltage shift in capacitance-voltage curves are related to the mobile ionic charge density in solutions with different pH values or DNA molecules.