High-efficiency dual single layer graphene modulator integrated on slot waveguides.

This paper presents an experimental and theoretical investigation of a graphene-integrated electro-absorption modulator (EAM) based on a slot waveguide. Due to the enhanced light-matter interaction of graphene, the device exhibits an impressive modulation efficiency (0.038 dBµm-1V-1) and bandwidth (≈ 16 GHz). Starting from these results, we carried out an extensive design study, focusing on three crucial design parameters and exploring the associated trade-offs in insertion loss, extinction ratio and bandwidth. The simulation results offer valuable insights into the influence of each design parameter, reaffirming that our slot waveguide platform holds great promise for realizing a high-performance EAM balancing optical and electrical performance. It is important to note that the slot waveguide was defined through standard deep ultraviolet (DUV) lithography, allowing seamless integration into high-density systems.

Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitters.

We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch. The micro-transfer-printed SOAs provide 10 dB small-signal gain around 1560 nm with a 3 dB bandwidth of 30 nm. Secondly, an integrated transmitter combining an on-chip widely tunable laser and a doped-Si Mach-Zehnder modulator (MZM) is demonstrated. The laser has a continuous tuning range over 40 nm and the transmitter is capable of 40 Gbps non-return-to-zero (NRZ) back-to-back transmission at wavelengths ranging from 1539 to 1573 nm. These demonstrations pave the way for the realization of complex and fully integrated photonic systems-on-chip with integrated III-V-on-Si components, and this technique is transferable to other material films and devices that can be released from their native substrate.

Broadband Optical Phase Modulation by Colloidal CdSe Quantum Wells.

Two-dimensional (2D) semiconductors are primed to realize a variety of photonic devices that rely on the transient properties of photogenerated charges, yet little is known on the change of the refractive index. The associated optical phase changes can be beneficial or undesired depending on the application, but require proper quantification. Measuring optical phase modulation of dilute 2D materials is, however, not trivial with common methods. Here, we demonstrate that 2D colloidal CdSe quantum wells, a useful model system, can modulate the phase of light across a broad spectrum using a femtosecond interferometry method. Next, we develop a toolbox to calculate the time-dependent refractive index of colloidal 2D materials from widely available transient absorption experiments using a modified effective medium algorithm. Our results show that the excitonic features of 2D materials result in broadband, ultrafast, and sizable phase modulation, even extending to the near infrared because of intraband transitions.

Heterogeneous integration of Si photodiodes on silicon nitride for near-visible light detection.

Silicon nitride (SiN) is used extensively to complement the standard silicon photonics portfolio. However, thus far demonstrated light sources and detectors on SiN have predominantly focused on telecommunication wavelengths. Yet, to unlock the full potential of SiN, integrated photodetectors for wavelengths below 850 nm are essential to serve applications such as biosensing, imaging, and quantum photonics. Here, we report the first, to the best of our knowledge, microtransfer printed Si p-i-n photodiodes on a commercially available SiN platform to target wavelengths <850 nm. A novel heterogeneous integration process flow was developed to offer a high microtransfer printing yield. Moreover, these devices are fabricated with CMOS compatible and wafer-scale technology.

Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer.

We present a loss-coupled distributed feedback microlaser, monolithically grown on a standard 300-mm Si wafer using nano-ridge engineering. The cavity is formed by integrating a metallic grating on top of the nano-ridge. This allows forming a laser cavity without etching the III-V material, avoiding damaged interfaces and the associated carrier loss. Simulations, supported by experimental characterisation of the modal gain of the nano-ridge devices, predict an optimal duty cycle for the grating of ~0.4, providing a good trade-off between coupling strength and cavity loss for the lasing mode. The model was experimentally verified by characterising the lasing threshold and external efficiency of devices exhibiting gratings with varying duty cycle. The high modal gain and low threshold obtained prove the excellent quality of the epitaxial material. Furthermore, the low loss metal grating might provide a future route to electrical injection and efficient heat dissipation of these nanoscale devices.

5 × 25 Gbit/s WDM transmitters based on passivated graphene-silicon electro-absorption modulators.

Today, one of the key challenges of graphene devices is establishing fabrication processes that can ensure performance stability and repeatability and that can eventually enable production in high volumes. In this paper, we use up-scalable fabrication processes to demonstrate three five-channel wavelength-division multiplexing (WDM) transmitters, each based on five graphene-silicon electro-absorption modulators. A passivation-first approach is used to encapsulate graphene, which results in hysteresis-free and uniform performance across the five channels of each WDM transmitter, for a total of 15 modulators. Open-eye diagrams are obtained at 25 Gb/s using $ 2.5\;{{\rm V}_{{\rm pp}}} $2.5Vpp, thus demonstrating potential for multi-channel data transmission at ${5}\times {25}\;{\rm Gb/s}$5×25Gb/s on each of the three WDM transmitters.

Integration of Colloidal PbS/CdS Quantum Dots with Plasmonic Antennas and Superconducting Detectors on a Silicon Nitride Photonic Platform.

Single-photon sources and detectors are indispensable building blocks for integrated quantum photonics, a research field that is seeing ever increasing interest for numerous applications. In this work, we implemented essential components for a quantum key distribution transceiver on a single photonic chip. Plasmonic antennas on top of silicon nitride waveguides provide Purcell enhancement with a concurrent increase of the count rate, speeding up the microsecond radiative lifetime of IR-emitting colloidal PbS/CdS quantum dots (QDs). The use of low-fluorescence silicon nitride, with a waveguide loss smaller than 1 dB/cm, made it possible to implement high extinction ratio optical filters and low insertion loss spectrometers. Waveguide-coupled superconducting nanowire single-photon detectors allow for low time-jitter single-photon detection. To showcase the performance of the components, we demonstrate on-chip lifetime spectroscopy of PbS/CdS QDs. The method developed in this paper is predicted to scale down to single QDs, and newly developed emitters can be readily integrated on the chip-based platform.

Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots.

Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can be attained only at high pump power and must compete with efficient multi-exciton recombination. Here, we show that mercury telluride (HgTe) QDs exhibit size-tunable stimulated emission throughout the near-infrared telecom window at thresholds unmatched by any QD studied before. We attribute this unique behaviour to surface-localized states in the bandgap that turn HgTe QDs into 4-level systems. The resulting long-lived population inversion induces amplified spontaneous emission under continuous-wave optical pumping at power levels compatible with solar irradiation and direct current electrical pumping. These results introduce an alternative approach for low-threshold QD-based gain media based on intentional trap states that paves the way for solution-processed infrared QD lasers and amplifiers.

Novel adiabatic coupler for III-V nano-ridge laser grown on a Si photonics platform.

While III-V lasers epitaxially grown on silicon have been demonstrated, an efficient approach for coupling them with a silicon photonics platform is still missing. In this paper, we present a novel design of an adiabatic coupler for interfacing nanometer-scale III-V lasers grown on SOI with other silicon photonics components. The starting point is a directional coupler, which achieves 100% coupling efficiency from the III-V lasing mode to the Si waveguide TE-like ground mode. To improve the robustness and manufacturability of the coupler, a linear-tapered adiabatic coupler is designed, which is less sensitive to variations and still reaches a coupling efficiency of around 98%. Nevertheless, it has a relatively large footprint and exhibits some undesired residual coupling to TM-like modes. To improve this, a more advanced adiabatic coupler whose geometry is varied along its propagation length is designed and manages to reach ∼100% coupling and decoupling within a length of 200 µm. The proposed couplers are designed for the particular case of III-V nano-ridge lasers monolithically grown using aspect-ratio-trapping (ART) together with nano-ridge engineering (NRE) but are believed to be compatible with other epitaxial III-V/Si integration platforms recently proposed. In this way, the presented coupler is expected to pave the way to integrating III-V lasers monolithically grown on SOI wafers with other photonics components, one step closer towards a fully functional silicon photonics platform.

Ultrafast carrier dynamics in colloidal WS2 nanosheets obtained through a hot injection synthesis.

In recent years, hot injection synthesis has emerged as a promising route for the production of nanostructured transition metal dichalcogenides, in large due to its better control over the crystallinity and monodispersity compared to other solution based methods. Understanding the photophysics of excitons in the thus obtained colloidal nanosheets is of great importance to explore their potential for applications in optoelectronics. Here, we study the carrier dynamics in these few-layer colloidal WS2 nanosheets by use of broadband transient absorption spectroscopy. The dynamics of both the bleach, linewidth broadening and energy shift across the entire visible and near-infrared spectrum, allows us to identify subpicosecond electron trapping as the main carrier loss channel. A more quantitative analysis shows that the intrinsic properties of colloidally synthesized nanosheets are on par with other synthesis methods, paving the way for this method to produce high quality nanosheets.

Fabrication and characterization of SiNx/Au cavities with colloidal nanocrystals.

We demonstrate the fabrication and characterization of on-chip vertically-emitting SiNx/Au nanopatch cavities containing a monolayer of colloidal quantum dots. The fabrication process is based on electron-beam lithography and deterministically positions both the cavity and the emitters within the cavity with an accuracy of 10 nm. The Purcell enhancement of the spontaneous emission of the quantum dots is studied theoretically and experimentally. The fabrication technique makes it possible to pattern the quantum dot monolayer such that the quantum dots only occupy the center of the nanopatch cavity where a Purcell factor up to 7 can be reached. The work paves the way towards scalable fabrication of bright and directive single-photon sources.

Vertical liquid controlled adiabatic waveguide coupler.

A broadband vertical liquid controlled optical waveguide coupler (LCC) is demonstrated. The fabricated vertical LCC with silicon nitride (SiN) waveguides can switch light between 2 stacked photonic circuit layers with zero energy consumption in a steady switch state. In combination with low-loss interlayer waveguide crossovers they enable large scale non-volatile switch circuits with low loss. The fabricated vertical LCC has a loss less than 2.0 dB in bar state and less than 2.6 dB in cross state over the telecommunication wavelength range 1260 nm to 1630 nm. Interlayer waveguide crossovers with the same interlayer oxide thickness as the LCC have a loss less than 0.06 dB over the same wavelength range. The crosstalk of the LCC is less than -21 dB over the wavelength range 1500 nm to 1630 nm for both bar and cross state.

Nonlinear silicon nitride waveguides based on a PECVD deposition platform.

In this work, we present a nonlinear silicon nitride waveguide. These waveguide are fabricated by readily available PECVD, conventional contact UV-lithography and high-temperature annealing techniques, thus dramatically reducing the processing complexity and cost. By patterning the waveguide structures firstly and then carrying out a high-temperature annealing process, not only sufficient waveguide thickness can be achieved, which gives more freedom to waveguide dispersion control, but also the material absorption loss in the waveguides be greatly reduced. The linear optical loss of the fabricated waveguide with a cross-section of 2.0 × 0.58 µm2 was measured to be as low as 0.58 dB/cm. The same loss level is demonstrated over a broad wavelength range from 1500 nm to 1630 nm. Moreover, the nonlinear refractive index of the waveguide was determined to be ~6.94 × 10-19 m2/W, indicating that comparable nonlinear performance with their LPCVD counterparts is expected. These silicon nitride waveguides based on a PECVD deposition platform can be useful for the development of more complicated on-chip nonlinear optical devices or circuits.

High-alignment-accuracy transfer printing of passive silicon waveguide structures.

We demonstrate the transfer printing of passive silicon devices on a silicon-on-insulator target waveguide wafer. Adiabatic taper structures and directional coupler structures were designed for 1310 nm and 1600 nm wavelength coupling tolerant for ± 1 µm misalignment. The release of silicon devices from the silicon substrate was realized by underetching the buried oxide layer while protecting the back-end stack. Devices were successfully picked by a PDMS stamp, by breaking the tethers that kept the silicon coupons in place on the source substrate, and printed with high alignment accuracy on a silicon photonic target wafer. Coupling losses of -1.5 +/- 0.5 dB for the adiabatic taper at 1310 nm wavelength and -0.5 +/- 0.5 dB for the directional coupler at 1600 nm wavelength are obtained.

1.3 µm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding.

In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 µm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100°C is obtained. Threshold current densities as low as 205 A/cm2 were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers.

Integration of etched facet, electrically pumped, C-band Fabry-Pérot lasers on a silicon photonic integrated circuit by transfer printing.

We report on the heterogeneous integration of electrically pumped InP Fabry-Pérot lasers on a SOI photonic integrated circuit by transfer printing. Transfer printing is a promising micromanipulation technique that allows the heterogeneous integration of optical and electronic components realized on their native substrate onto a target substrate with efficient use of the source material, in a way that can be scaled to parallel manipulation and that allows mixing components from different sources onto the same target. We pre-process transfer printable etched facet Fabry-Pérot lasers on their native InP substrate, transfer print them into a trench defined in an SOI photonic chip and post-process the printed lasers on the target substrate. The laser facet is successfully butt-coupled to the photonic circuit using a silicon inverse taper based spot size converter. Milliwatt optical output power coupled to the Si waveguide circuit at 100 mA is demonstrated.

Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon.

Several approaches for growing III-V lasers on silicon were recently demonstrated. Most are not compatible with further integration, however, and rely on thick buffer layers and require special substrates. Recently, we demonstrated a novel approach for growing high quality InP without buffer on standard 001-silicon substrates using a selective growth process compatible with integration. Here we show high quality InGaAs layers can be grown on these InP-templates. High-resolution TEM analysis shows these layers are free of optically active defects. Contrary to InP, the InGaAs material exhibits strong photoluminescence for wavelengths relevant for integration with silicon photonics integrated circuits. Distributed feedback lasers were defined by etching a first order grating in the top surface of the device. Clear laser operation at a single wavelength with strong suppression of side modes was demonstrated. Compared to the previously demonstrated InP lasers 65% threshold reduction is observed. Demonstration of laser arrays with linearly increasing wavelength prove the control of the process and the high quality of the material. This is an important result toward realizing fully integrated photonic ICs on silicon substrates.

Strong forces in optomechanically actuated resonant mass sensor.

As resonance mass sensors shrink in order to improve the sensitivity, traditional methods of transduction and readout struggle to keep up with increasing resonance frequencies and decreasing feature sizes. In this work we demonstrate an all-photonically transduced resonant mass sensor that manages to deal with these problems. The strong optomechanical force in slot waveguides is used to drive the mechanical resonanator giving a good signal to noise ratio at low optical powers. Using 120 µW of modulated optical power we measure a frequency noise equivalent to being able to resolve 500 kDa.

Microfabricated devices for single objective single plane illumination microscopy (SoSPIM).

Light sheet microscopy is a relatively new form of fluorescence microscopy that has been receiving a lot of attention recently. The strong points of the technique, such as high signal to noise ratio and its reduced photodamage of fluorescently labelled samples, come from its unique feature to illuminate only a thin plane in the sample that coincides with the focal plane of the detection lens. Typically this requires two closely positioned perpendicular objective lenses, one for detection and one for illumination. Apart from the fact that this special configuration of objective lenses is incompatible with standard microscope bodies, it is particularly problematic for high-resolution lenses which typically have a short working distance. To address these issues we developed sample holders with an integrated micromirror to perform single lens light sheet microscopy, also known as single objective single plane illumination microscopy (SoSPIM). The first design is based on a wet-etched silicon substrate, the second on a microfabricated polished polymer plug. We achieved an on-chip light sheet thickness of 2.3 µm (FWHM) at 638 nm with the polymer micromirror and of 1.7 µm (FWHM) at 638 nm with the silicon micromirror, comparable to reported light sheet thicknesses obtained on dedicated light sheet microscopes. A marked contrast improvement was obtained with both sample holders as compared to classic epi-fluorescence microscopy. In order to evaluate whether this technology could be made available on a larger scale, in a next step we evaluated the optical quality of inexpensive replicas from both types of master molds. We found that replicas from the polished polymer based mold have an optical quality close to that of the master component, while replicas from the silicon based mold were of slightly lower but still acceptable quality. The suitability of the replicated polymer based sample holder for single-lens light sheet microscopy was finally demonstrated by imaging breast cancer spheroids.

Novel adiabatic tapered couplers for active III-V/SOI devices fabricated through transfer printing.

We present the design of two novel adiabatic tapered coupling structures that allow efficient and alignment tolerant mode conversion between a III-V membrane waveguide and a single-mode SOI waveguide in active heterogeneously integrated devices. Both proposed couplers employ a broad intermediate waveguide to facilitate highly alignment tolerant coupling. This robustness is needed to comply with the current misalignment tolerance requirements for high-throughput transfer printing. The proposed coupling structures are expected to pave the way for transfer-printing-based heterogeneous integration of active III-V devices such as semiconductor optical amplifiers (SOAs), photodetectors, electro-absorption modulators (EAMs) and single wavelength lasers on silicon photonic integrated circuits.