Fuel-dependent, shape-selective, distinct blue and green photoluminescence from α-Bi2 O3 and ß-Bi2 O3 synthesised using microwave combustion.

In the current study, α-Bi2 O3 and ß-Bi2 O3 were synthesised using a one-step, novel, solid-solid combustion technique. The reaction rate was increased with the use of microwaves (molecular heating) compared to direct or indirect heating. A strong relationship was observed between the fuel, polymorphic structure, shape and optical properties of the synthesised Bi2 O3 . Photoluminescence studies reveal that two major visible emissions are observed for all samples. The two emissions are distinct with a broad peak in blue and a narrow peak in green. The intensity of the green characteristic emission depends strongly on the heating method used for synthesis and is more intense for microwave-synthesised samples.

Surface Nanopatterning of Amorphous Gallium Oxide Thin Film for Enhanced Solar-blind Photodetection.

Gallium oxide is an ultra-wide band gap semiconductor (Eg > 4.4 eV), best suited intrinsically for the fabrication of solar-blind photodetectors. Apart from its crystalline phases, amorphous Ga2O3 based solar-blind photodetector offer simple and facile growth without the hassle of lattice matching and high temperatures for growth and annealing. However, they often suffer from long response times which hinders any practical use. Herein, we report a simple and cost-effective method to enhance the device performance of amorphous gallium oxide thin film photodetector by nanopatterning the surface using a broad and low energy Ar+ ion beam. The ripples formed on the surface of gallium oxide thin film lead to the formation of anisotropic conduction channels along with an increase in the surface defects. The defects introduced in the system act as recombination centers for the charge carriers bringing about a reduction in the decay time of the devices, even at zero-bias. The fall time of the rippled devices, therefore, reduces, making the devices faster by more than 15 times. This approach of surface modification of gallium oxide provides a one-step, low cost method to enhance the device performance of amorphous thin films which can help in the realization of next-generation optoelectronics.

CVD-Grown Monolayer MoS2 and GaN Thin Film Heterostructure for a Self-Powered and Bidirectional Photodetector with an Extended Active Spectrum.

Photodetector technology has evolved significantly over the years with the emergence of new active materials. However, there remain trade-offs between spectral sensitivity, operating energy, and, more recently, an ability to harbor additional features such as persistent photoconductivity and bidirectional photocurrents for new emerging application areas such as switchable light imaging and filter-less color discrimination. Here, we demonstrate a self-powered bidirectional photodetector based on molybdenum disulfide/gallium nitride (MoS2/GaN) epitaxial heterostructure. This fabricated detector exhibits self-powered functionality and achieves detection in two discrete wavelength bands: ultraviolet and visible. Notably, it attains a peak responsivity of 631 mAW-1 at a bias of 0V. The device's response to illumination at these two wavelengths is governed by distinct mechanisms, activated under applied bias conditions, thereby inducing a reversal in the polarity of the photocurrent. This work underscores the feasibility of self-powered and bidirectional photocurrent detection but also opens new vistas for technological advancements for future optoelectronic, neuromorphic, and sensing applications.

UV/blue/green converted efficient red-NIR photoluminescence in Cr incorporated MgAl2O4nanocrystals: Site selective emission tailored through cation inversion and intrinsic defects.

The UV/Visible activated near-infrared (NIR) phosphors have many applications in solid state lighting, night vision devices and bio-imaging. The early research reported the red-NIR emitting phosphors doped with Cr3+centers upon visible light excitation. Here, in this work the intense red-NIR emission and color tuning is achieved for broad excitation range (UV/blue/green) through Cr dopant induced defect centers and cation inversionWe present the infuence of Cr dopant induced defect centers and cation inversion in Mg1-xCrxAl2O4(x= 0.5, 1, 3, 5 and 10 mol%) nanocrystals. The Cr3+doped MgAl2O4nanocrystals were synthesized by combustion method through stoichiometric substitution of Mg by Cr, while most of the Cr3+ions occupied the octahedral sites of spinel host with the formation of antisite defects, Cr3+clusters, magnesium and oxygen vacancies. These defect centers were probed through Rietveld refinement, PL, X-ray photoelectron and nuclear magnetic resonance spectra analyses. At UV excitation, the intrinsic defects played an interesting role in exhibiting the blue-violet emission attributed to host lattice defects and red-NIR emission attributed to strong/weak ligand field octahedral Cr3+sites, via charge transfer to Cr3+ions. The PL spectra evinced the enhanced red-NIR emission intensity upon 266 nm excitation than upon blue and green light excitation. Further, the weak ligand field site emission is found to be dominating with increase in doping concentration. Thus, Cr doped MgAl2O4nanocrystals showed their potency of exhibiting the intense red-NIR emission and color tuning (from red purple to bluish purple and then to red color) upon UV/blue/green excitation.

Fabrication of GaN nano-towers based self-powered UV photodetector.

The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon ultraviolet exposure leading to outstanding performance from the developed detection device. The fabricated detector display low dark current (~ 12 nA), high ILight/IDark ratio (> 104), fast time-correlated transient response (~ 433 µs) upon ultraviolet (325 nm) illumination. A high photoresponsivity of 2.47 A/W is achieved in self-powered mode of operation. The reason behind such high performance could be attributed to built-in electric field developed from a difference in Schottky barrier heights will be discussed in detail. While in photoconductive mode, the responsivity is observed to be 35.4 A/W @ - 3 V along with very high external quantum efficiency (~ 104%), lower noise equivalent power (~ 10-13 WHz-1/2) and excellent UV-Vis selectivity. Nanotower structure with lower strain and dislocations as well as reduced trap states cumulatively contributed to augmented performance from the device. The utilization of these GaN-Nanotower structures can potentially be useful towards the fabrication of energy-efficient ultraviolet photodetectors.

Switchable cool and cold white emission from dysprosium doped SrZnO2.

In presented work, excitation selective novel cool and cold white emission is reported from dysprosium (Dy) doped SrZnO2nanophosphors, synthesized by combustion technique. The host lattice provided selective excitation routes for Dy3+levels and intrinsic defects levels via charge transfer (270 nm) and host defects absorption bands (375 nm), respectively. The emission due to Dy3+levels was found to be exhibiting cool white emission and that from intrinsic defects was cold white emission, as characterized from correlated color temperature. UV irradiated glow curve analysis complemented the results by exhibiting signal due to Dy assisted traps on near UV exposure (254 nm) and that of host related traps at far UV exposure (365 nm). The luminescence phenomenon is comprehended through proposed band model. The obtained results proclaimed SrZnO2:Dy as a potential member among white emitting phosphors to be used as standard daylight sources in commercial and aesthetic lighting.

Mechanistic insights into defect generation and tuning of optical properties in Zn1-xFexAl2O4(0.01 ≤ x ≤ 0.40) nanocrystals.

The correlation of several defects and optical and magnetic properties with Fe content in Zn1-xFexAl2O4 (0.01 ≤ x ≤ 0.40) nanocrystals has been scrutinized through X-ray diffraction, O K-edge X-ray absorption near-edge structure, FT-IR, diffuse reflectance, photoluminescence and electron spin-resonance spectroscopies, and vibrating sample magnetometry. Increasing Fe content causes elongation in the octahedral units of the lattice, accompanied by distortion in the octahedral coordination. Fe introduces non-radiative centres in the forbidden gap, thereby tuning the band gap from 4.37 to 3.88 eV and eliminating emission in the visible region. Zn vacancies are found to tail off, while {\rm Fe}_i^{\bullet \bullet \bullet}, {\rm Al}_{\rm Zn}^\bullet and FeAl× antisite defects increase in concentration with increasing Fe content. Inhomogeneous broadening of spin-resonance signals infers strong spin-lattice interactions of Fe3+ ions at distorted octahedral and non-symmetric tetrahedral sites. A transition is observed from paramagnetism to superparamagnetism at higher Fe concentrations. A visual colour change from pearly white to orange-brown is observed in Zn1-xFexAl2O4 nanocrystals with increasing Fe content, revealing its potential candidature for pigments in the paint and dye industries.

Oxygen vacancies induced photoluminescence in [Formula: see text] nanophosphors probed by theoretical and experimental analysis.

We report, for the first time, the influence of oxygen vacancies on band structure and local electronic structure of [Formula: see text] (SZO) nanophosphors by combined first principle calculations based on density functional theory and full multiple scattering theory, correlated with experimental results obtained from X-ray absorption and photoluminescence spectroscopies. The band structure analysis from density functional theory revealed the formation of new energy states in the forbidden gap due to introduction of oxygen vacancies in the system, thereby causing disruption in intrinsic symmetry and altering bond lengths in SZO system. These defect states are anticipated as origin of observed photoluminescence in SZO nanophosphors. The experimental X-ray absorption near edge structure (XANES) at Zn and Sr K-edges were successfully imitated by simulated XANES obtained after removing oxygen atoms around Zn and Sr cores, which affirmed the presence and signature of oxygen vacancies on near edge structure.

Au-Nanoplasmonics-Mediated Surface Plasmon-Enhanced GaN Nanostructured UV Photodetectors.

The nanoplasmonic impact of chemically synthesized Au nanoparticles (Au NPs) on the performance of GaN nanostructure-based ultraviolet (UV) photodetectors is analyzed. The devices with uniformly distributed Au NPs on GaN nanostructures (nanoislands and nanoflowers) prominently respond toward UV illumination (325 nm) in both self-powered as well as photoconductive modes of operation and have shown fast and stable time-correlated response with significant enhancement in the performance parameters. A comprehensive analysis of the device design, laser power, and bias-dependent responsivity and response time is presented. The fabricated Au NP/GaN nanoflower-based device yields the highest photoresponsivity of ∼ 380 mA/W, detectivity of ∼ 1010 jones, reduced noise equivalent power of ∼ 5.5 × 10-13 W Hz-1/2, quantum efficiency of ∼ 145%, and fast response/recovery time of ∼40 ms. The report illustrates the mechanism where light interacts with the chemically synthesized nanoparticles guided by the surface plasmon to effectively enhance the device performance. It is observed that the Au NP-stimulated local surface plasmon resonance effect and reduced channel resistance contribute to the augmented performance of the devices. Further, the decoration of low-dimensional Au NPs on GaN nanostructures acts as a detection enhancer with a fast recovery time and paves the way toward the realization of energy-efficient optoelectronic device applications.