Hydrogenation of silicon-nanocrystals-embedded silicon oxide passivating contacts.

We investigate the effect of hydrogen passivation of dangling bonds in silicon oxide passivating contacts with embedded silicon nanocrystals (NAnocrystalline Transport path in Ultra-thin dielectrics for REinforced passivation contact, NATURE contact). We first investigated the differences in electrical properties of the samples after hydrogen gas annealing and hydrogen plasma treatment (HPT). The results show that the NATURE contact was efficiently passivated by hydrogen after HPT owing to the introduction of hydrogen radicals into the structure. Furthermore, we examined the dependence of process parameters such as HPT temperature, duration, and H2pressure, on the electrical properties and hydrogen depth profiles. As a result, HPT at 500 °C, 15 min, and 0.5 Torr resulted in a large amount of hydrogen inside the NATURE contact and the highest implied open-circuit voltage of 724 mV. Contact resistivity and surface roughness hardly increased when HPT was performed under the optimized condition, which only improved the passivation performance without deteriorating the electron transport properties of the NATURE contact.

Acceleration of hydrogen absorption by palladium through surface alloying with gold.

Enhancement of hydrogen (H) absorption kinetics improves the performance of hydrogen-purifying membranes and hydrogen-storage materials, which is necessary for utilizing hydrogen as a carbon-free energy carrier. Pd-Au alloys are known to show higher hydrogen solubility than pure Pd. However, the effect of Au on the hydrogen penetration from the surface into the subsurface region has not been clarified so far. Here, we investigate the hydrogen absorption at Pd-Au surface alloys on Pd(110) by means of thermal desorption spectroscopy (TDS) and hydrogen depth profiling with nuclear reaction analysis (NRA). We demonstrate that alloying the Pd(110) surface with submonolayer amounts of Au dramatically accelerates the hydrogen absorption. The degree of acceleration shows a volcano-shaped form against Au coverage. This kinetic enhancement is explained by a reduced penetration barrier mainly caused by a destabilization of chemisorbed surface hydrogen, which is supported by density-functional-theory (DFT) calculations. The destabilization of chemisorbed surface hydrogen is attributed to the change of the surface electronic states as observed by angle-resolved photoemission spectroscopy (ARPES). If generalized, these discoveries may lead to improving and controlling the hydrogen transport across the surfaces of hydrogen-absorbing materials.

Hydrogenation and hydrogen diffusion at the anatase TiO2(101) surface.

Hydrogenation of TiO2 enhances its visible photoabsorption, leading to efficient photocatalytic activity. However, the role of hydrogen has not been fully understood. The anatase TiO2(101) surface treated by hydrogen ion irradiation at 500 eV was investigated by photoemission spectroscopy and nuclear reaction analysis. Hydrogen irradiation induces an in-gap state 1-1.6 eV below the Fermi level and a downward band bending of 0.27 eV. The H depth profile at 300 K shows a surface peak with an H amount of (2.9 ± 0.3) × 1015 cm-2 with little concentration in a deeper region. At 200 K, on the other hand, the H depth profile shows a maximum at about 1 nm below the surface corresponding to an H amount of (6.1 ± 0.3) × 1015 cm-2 along with a broad distribution extending to 50 nm at an average concentration of 0.8 at. %. These results show that H diffusion in anatase TiO2 is much faster than in rutile TiO2 [Y. Ohashi, J. Phys. Chem. C 123, 10319-10324 (2019)]. The H diffusion coefficient at 200 K is determined to be 2.7 ± 0.1 × 10-13 m2 s-1.

Toward an Understanding of Selective Alkyne Hydrogenation on Ceria: On the Impact of O Vacancies on H2 Interaction with CeO2(111).

Ceria (CeO2) has recently been found to be a promising catalyst in the selective hydrogenation of alkynes to alkenes. This reaction occurs primarily on highly dispersed metal catalysts, but rarely on oxide surfaces. The origin of the outstanding activity and selectivity observed on CeO2 remains unclear. In this work, we show that one key aspect of the hydrogenation reaction-the interaction of hydrogen with the oxide-depends strongly on the presence of O vacancies within CeO2. Through infrared reflection absorption spectroscopy on well-ordered CeO2(111) thin films and density functional theory (DFT) calculations, we show that the preferred heterolytic dissociation of molecular hydrogen on CeO2(111) requires H2 pressures in the mbar regime. Hydrogen depth profiling with nuclear reaction analysis indicates that H species stay on the surface of stoichiometric CeO2(111) films, whereas H incorporates as a volatile species into the volume of partially reduced CeO2-x(111) thin films (x ∼ 1.8-1.9). Complementary DFT calculations demonstrate that oxygen vacancies facilitate H incorporation below the surface and that they are the key to the stabilization of hydridic H species in the volume of reduced ceria.

Novel insight into the hydrogen absorption mechanism at the Pd(110) surface.

The microscopic mechanism of low-temperature (80 K < T < 160 K) hydrogen (H) ingress into the H2 (<2.66 × 10(-3) Pa) exposed Pd(110) surface is explored by H depth profiling with (15)N nuclear reaction analysis (NRA) and thermal desorption spectroscopy (TDS) with isotope (H, D) labeled surface hydrogen. NRA and TDS reveal two types of absorbed hydrogen states of distinctly different depth distributions. Between 80 K and ∼145 K a near-surface hydride phase evolving as the TDS α1 feature at 160 K forms, which initially extends only several nanometers into depth. On the other hand, a bulk-absorbed hydrogen state develops between 80 K and ∼160 K which gives rise to a characteristic α3 TDS feature above 190 K. These two absorbed states are populated at spatially separated surface entrance channels. The near-surface hydride is populated through rapid penetration at minority sites (presumably defects) while the bulk-absorbed state forms at regular terraces with much lower probability per site. In both cases, absorption of gas phase hydrogen transfers pre-adsorbed hydrogen atoms below the surface and replaces them at the chemisorption sites by post-dosed hydrogen in a process that requires much less activation energy (<100 meV) than monatomic diffusion of chemisorbed H atoms into subsurface sites. This small energy barrier suggests that the rate-determining step of the absorption process is either H2 dissociation on the H-saturated Pd surface or a concerted penetration mechanism, where excess H atoms weakly bound to energetically less favorable adsorption sites stabilize themselves in the chemisorption wells while pre-chemisorbed H atoms simultaneously transit into the subsurface. The peculiarity of absorption at regular Pd(110) terraces in comparison to Pd(111) and Pd(100) is discussed.

Selective Epitaxial Growth of Ca2NH and CaNH Thin Films by Reactive Magnetron Sputtering under Hydrogen Partial Pressure Control.

Calcium compounds with N and H are promising catalysts for NH3 conversion, and their epitaxial thin films provide a platform to quantitatively understand the catalytic activities. Here we report the selective epitaxial growth of Ca2NH and CaNH thin films by controlling the hydrogen partial pressure (PH2) during reactive magnetron sputtering. We find that the hydrogen charge states can be tuned by PH2: Ca2NH containing H- is formed at PH2 < 0.04 Pa, while CaNH containing H+ is formed at PH2 > 0.04 Pa. In situ plasma emission spectroscopy reveals that the intensity of the Ca atomic emission (∼422 nm) decreases as PH2 increases, suggesting that Ca reacts with H2 and N2 to form Ca2NH at lower PH2, whereas at higher PH2, CaHx is first formed on the target surface and then sputtered to produce CaNH. This study provides a novel route to control the hydrogen charge states in Ca-N-H epitaxial thin films.

Revealing the Role of Hydrogen in Electron-Doping Mottronics for Strongly Correlated Vanadium Dioxide.

Hydrogen-associated electron-doping Mottronics for d-band correlated oxides (e.g., VO2) opens up a new paradigm to regulate the electronic functionality via directly manipulating the orbital configuration and occupancy. Nevertheless, the role of hydrogen in the Mottronic transition of VO2 is yet unclear because opposite orbital reconfigurations toward either the metallic or highly insulating states were both reported. Herein, we demonstrate the root cause for such hydrogen-induced multiple electronic phase transitions by 1H quantification using nuclear reaction analysis. A low hydrogenation temperature is demonstrated to be vital in achieving a large hydrogen concentration (nH ≈ 1022 cm-3) that further enhances the t2g orbital occupancy to trigger electron localizations. In contrast, elevating the hydrogenation temperatures surprisingly reduces nH to ∼1021 cm-3 but forms more stable metallic H0.06VO2. This leads to the recognition of a weaker hydrogen interaction that triggers electron localization within VO2 via Mottronically enhancing the orbital occupancies.

Electron-Doping Mottronics in Strongly Correlated Perovskite.

The discovery of hydrogen-induced electron localization and highly insulating states in d-band electron correlated perovskites has opened a new paradigm for exploring novel electronic phases of condensed matters and applications in emerging field-controlled electronic devices (e.g., Mottronics). Although a significant understanding of doping-tuned transport properties of single crystalline correlated materials exists, it has remained unclear how doping-controlled transport properties behave in the presence of planar defects. The discovery of an unexpected high-concentration doping effect in defective regions is reported for correlated nickelates. It enables electronic conductance by tuning the Fermi-level in Mott-Hubbard band and shaping the lower Hubbard band state into a partially filled configuration. Interface engineering and grain boundary designs are performed for Hx SmNiO3 /SrRuO3 heterostructures, and a Mottronic device is achieved. The interfacial aggregation of hydrogen is controlled and quantified to establish its correlation with the electrical transport properties. The chemical bonding between the incorporated hydrogen with defective SmNiO3 is further analyzed by the positron annihilation spectroscopy. The present work unveils new materials physics in correlated materials and suggests novel doping strategies for developing Mottronic and iontronic devices via hydrogen-doping-controlled orbital occupancy in perovskite heterostructures.

Equations of Motion of Free-Floating Spacecraft-Manipulator Systems: An Engineer's Tutorial.

The paper provides a step-by-step tutorial on the Generalized Jacobian Matrix (GJM) approach for modeling and simulation of spacecraft-manipulator systems. The General Jacobian Matrix approach describes the motion of the end-effector of an underactuated manipulator system solely by the manipulator joint rotations, with the attitude and position of the base-spacecraft resulting from the manipulator motion. The coupling of the manipulator motion with the base-spacecraft are thus expressed in a generalized inertia matrix and a GJM. The focus of the paper lies on the complete analytic derivation of the generalized equations of motion of a free-floating spacecraft-manipulator system. This includes symbolic analytic expressions for all inertia property matrices of the system, including their time derivatives and joint-angle derivatives, as well as an expression for the generalized Jacobian of a generic point on any link of the spacecraft-manipulator system. The kinematics structure of the spacecraft-manipulator system is described both in terms of direction-cosine matrices and unit quaternions. An additional important contribution of this paper is to propose a new and more detailed definition for the modes of maneuvering of a spacecraft-manipulator. In particular, the two commonly used categories free-flying and free-floating are expanded by the introduction of five categories, namely floating, rotation-floating, rotation-flying, translation-flying, and flying. A fully-symbolic and a partially-symbolic option for the implementation of a numerical simulation model based on the proposed analytic approach are introduced and exemplary simulation results for a planar four-link spacecraft-manipulator system and a spatial six-link spacecraft manipulator system are presented.

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis.

Nuclear reaction analysis (NRA) via the resonant (1)H((15)N,αγ)(12)C reaction is a highly effective method of depth profiling that quantitatively and non-destructively reveals the hydrogen density distribution at surfaces, at interfaces, and in the volume of solid materials with high depth resolution. The technique applies a (15)N ion beam of 6.385 MeV provided by an electrostatic accelerator and specifically detects the (1)H isotope in depths up to about 2 µm from the target surface. Surface H coverages are measured with a sensitivity in the order of ~10(13) cm(-2) (~1% of a typical atomic monolayer density) and H volume concentrations with a detection limit of ~10(18) cm(-3) (~100 at. ppm). The near-surface depth resolution is 2-5 nm for surface-normal (15)N ion incidence onto the target and can be enhanced to values below 1 nm for very flat targets by adopting a surface-grazing incidence geometry. The method is versatile and readily applied to any high vacuum compatible homogeneous material with a smooth surface (no pores). Electrically conductive targets usually tolerate the ion beam irradiation with negligible degradation. Hydrogen quantitation and correct depth analysis require knowledge of the elementary composition (besides hydrogen) and mass density of the target material. Especially in combination with ultra-high vacuum methods for in-situ target preparation and characterization, (1)H((15)N,αγ)(12)C NRA is ideally suited for hydrogen analysis at atomically controlled surfaces and nanostructured interfaces. We exemplarily demonstrate here the application of (15)N NRA at the MALT Tandem accelerator facility of the University of Tokyo to (1) quantitatively measure the surface coverage and the bulk concentration of hydrogen in the near-surface region of a H2 exposed Pd(110) single crystal, and (2) to determine the depth location and layer density of hydrogen near the interfaces of thin SiO2 films on Si(100).