Energy resolving dark-field imaging with dual phase grating interferometer.

X-ray dark-filed imaging is a powerful approach to quantify the dimension of micro-structures of the object. Often, a series of dark-filed signals have to be measured under various correlation lengths. For instance, this is often achieved by adjusting the sample positions by multiple times in Talbot-Lau interferometer. Moreover, such multiple measurements can also be collected via adjustments of the inter-space between the phase gratings in dual phase grating interferometer. In this study, the energy resolving capability of the dual phase grating interferometer is explored with the aim to accelerate the data acquisition speed of dark-filed imaging. To do so, both theoretical analyses and numerical simulations are investigated. Specifically, the responses of the dual phase grating interferometer at varied X-ray beam energies are studied. Compared with the mechanical position translation approach, the combination of such energy resolving capability helps to greatly shorten the total dark-field imaging time in dual phase grating interferometer.

Simplified Near-Degenerate Four-Wave-Mixing Microscopy.

Four-wave-mixing microscopy is widely researched in both biology and medicine. In this paper, we present a simplified near-degenerate four-wave-mixing microscopy (SNDFWM). An ultra-steep long-pass filter is utilized to produce an ultra-steep edge on the spectrum of a femtosecond pulse, and a super-sensitive four-wave-mixing (FWM) signal can be generated via an ultra-steep short-pass filter. Compared with the current state-of-the-art FWM microscopy, this SNDFWM microscopy has the advantages of simpler experimental apparatus, lower cost, and easier operation. We demonstrate that this SNDFWM microscopy has high sensitivity and high spatial resolution in both nanowires and biological tissues. We also show that the SNDFWM microscopy can achieve an ultra-sensitive detection based on the electron-resonance effect. This method might find an important application in tracking of nano drugs in vivo.

Bottom-Up Tri-gate Transistors and Submicrosecond Photodetectors from Guided CdS Nanowalls.

Tri-gate transistors offer better performance than planar transistors by exerting additional gate control over a channel from two lateral sides of semiconductor nanowalls (or "fins"). Here we report the bottom-up assembly of aligned CdS nanowalls by a simultaneous combination of horizontal catalytic vapor-liquid-solid growth and vertical facet-selective noncatalytic vapor-solid growth and their parallel integration into tri-gate transistors and photodetectors at wafer scale (cm2) without postgrowth transfer or alignment steps. These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 108, 4 orders of magnitude higher than the best results ever reported for planar enhancement-mode CdS transistors. The response time of the photodetector is reduced to the submicrosecond level, 1 order of magnitude shorter than the best results ever reported for photodetectors made of bottom-up semiconductor nanostructures. Guided semiconductor nanowalls open new opportunities for high-performance 3D nanodevices assembled from the bottom up.

Eu-doped Si-SiO2 core-shell nanowires for Si-compatible red emission.

The indirect bandgap of single-crystalline silicon has so far precluded the full integration of silicon microelectronics with photonics-which is expected to allow the realization of low-cost, high-speed optical information processing and communication in the future. Here we report the growth of europium (Eu)-doped Si-SiO2 core-shell nanowires by an oxide-assisted chemical vapor deposition method. The Eu concentration in these nanowires is effectively improved by intentionally increasing the thickness of SiO2 shells. As a result, a strong Si-compatible red emission from Eu(3+) ions was observed under laser illumination. The effect of Eu(3+) concentration on the emission efficiency was comprehensively studied, with the highest efficiency at Eu content about 0.8 at%. The relaxation mechanism of this concentration dependent luminescence was further explored through lifetime measurements. In light of the strong characteristic red emission and nanoscale footprint, these nanowires are promising Si-compatible light emission materials for future integrated nanophotonics.

Mesoporous ZnCo2O4 nanoflakes grown on nickel foam as electrodes for high performance supercapacitors.

ZnCo2O4 nanoflakes, as electrodes for supercapacitors, are grown on a cellular nickel foam using a cost-effective hydrothermal procedure. The mesoporous ZnCo2O4 nanoflakes have large electroactive surface areas with strong adhesion to the Ni foam, allowing fast ion and electron transport. The nanoarchitecture electrodes deliver an excellent specific capacitance of 1220 F g(-1) at a current density of 2 A g(-1) in a 2 M KOH aqueous solution and a long-term cyclic stability of 94.2% capacitance retention after 5000 cycles. The fabrication strategy is facile, cost-effective, and can offer great promise for large-scale supercapacitor applications.

Room-temperature near-infrared photodetectors based on single heterojunction nanowires.

Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 µm), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.

Growth of alloy MoS(2x)Se2(1-x) nanosheets with fully tunable chemical compositions and optical properties.

Band gap engineering of atomically thin two-dimensional layered materials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, a simple one-step chemical vapor deposition approach for the simultaneous growth of alloy MoS2xSe2(1-x) triangular nanosheets with complete composition tunability. Both the Raman and the photoluminescence studies show tunable optical properties consistent with composition of the alloy nanosheets. Importantly, all samples show a single bandedge emission peak, with the spectral peak position shifting from 668 nm (for pure MoS2) to 795 nm (for pure MoSe2), indicating the high quality for these complete composition alloy nanosheets. These band gap engineered 2D structures could open up an exciting opportunity for probing their fundamental physical properties in 2D and may find diverse applications in functional electronic/optoelectronic devices.

Low-threshold nanowire laser based on composition-symmetric semiconductor nanowires.

Low-threshold nanoscale lasers are attractive for their promising applications in highly integrated photonic devices and systems. Here we report the controllable growth of composition-symmetric CdS(x)Se(1-x) nanowires by using a multistep thermal evaporation route with moving sources. Microstructure analyses reveal the obtained wires are high-quality single crystals with the composition gradually changed from the center toward their both ends. Under laser illumination, these wires exhibit symmetrical color distribution along the length direction, with red at the center and green at the both ends. Optically pumped lasing is realized at room temperature using these composition-symmetric nanowires, with the threshold several times lower than that of composition-homogeneous wires. This new nanowire structure will have potential applications as low-threshold nanoscale lasers in integrated nanophotonics.

Replicating CD Nanogrooves onto PDMS to Guide Nanowire Growth for Monolithic Flexible Photodetectors with High Bending-Stable UV-vis-NIR Photoresponse.

Guided nanowires grown on polymer surfaces facilitate their seamless integration as flexible devices without post-growth processing steps. However, this is challenging due to the inability of polymer films to provide the required lattice-matching effect. In this work, this challenge is addressed by replicating highly aligned nanogrooves from a compact disc (CD) onto a casted flexible polydimethylsiloxane (PDMS) surface. Leveraging the replicated nanogrooves, copper hexadecafluorophthalocyanine (F16CuPc) and various metal phthalocyanines are guided into large-area, self-aligned nanowires. Subsequently, by employing specifically designed shadow masks during electrode deposition, these nanowires are seamlessly integrated as either a monolithic flexible photodetector with a large sensing area or on-chip flexible photodetector arrays. The resulting flexible photodetectors exhibit millisecond and long-term stable response to UV-vis-NIR light. Notably, they demonstrate exceptional bending stability, retaining stable and sensitive photoresponse even at a curvature radius as low as 0.5 cm and after enduring 1000 bending cycles. Furthermore, the photodetector array showcases consistent sensitivity and response speed across the entire array. This work not only proves the viability of guided nanowire growth on flexible polymer surfaces by replicating CD nanogrooves but also underscores the potential for large-scale monolithic integration of guided nanowires as flexible devices.

Modulated exciton-plasmon interactions in Au-SiO2-CdTe composite nanoparticles.

Well-defined Au-SiO(2)-CdTe composite nanoparticles were synthesized via a multistep chemical approach in water solution to gain insight into the interaction between metal and semiconductor nanostructures. Photoluminescence measurement reveals that the fluorescence of CdTe quantum dots (QDs) in this composite with optimized SiO(2) thickness (4 nm) has over ten times enhancement compared with that of bare CdTe QDs. The considerable fluorescence enhancement of CdTe QDs is attributed to the surface plasmon resonance, which is further confirmed by the lifetime measurement. The enhanced fluorescence can be used to improve the performance of CdTe QDs as fluorescence probe and may find potential applications in biolabeling.

Bandgap broadly tunable GaZnSeAs alloy nanowires.

Composition-tunable semiconductor alloy nanowires are emerging as an important class of materials for the realization of high-performance laterally-arranged multiple bandgap (LAMB) solar cells. Here we report the first growth of GaZnSeAs quaternary alloy nanowires with composed elements between two different groups using a temperature/space-selective CVD route. Under laser excitation, these special quaternary alloy nanowires exhibit composition-related characteristic emissions, with peak wavelengths gradually tunable from 470 nm (2.64 eV) to 832 nm (1.49 eV), covering almost the entire visible spectrum. Surface photovoltage measurements further reveal that these alloy nanowires have tunable bandgaps along the length of the substrate, making them promising candidates for developing high-efficiency LAMB solar cells. These quaternary alloy nanowires represent a new advancement in material synthesis and would have potential applications in a variety of function-tunable and broadband-response optoelectronic devices.

Wavelength-converted/selective waveguiding based on composition-graded semiconductor nanowires.

Compact wavelength-sensitive optical components are desirable for optical information processing and communication in photonic integrated system. In this work, optical waveguiding along single composition-graded CdS(x)Se(1-x) nanowires were systematically investigated. Under a focused laser excitation, the excited light can be guided passively along the bandgap-increased direction of the nanowire, keeping the photonic energy of the guided light almost unchanged during the whole propagation. In comparison, the excited light is guided actively through incessantly repeated band-to-band reabsorption and re-emitting processes along the bandgap-decreased direction, resulting in a gradual wavelength conversion during propagation. On the basis of this wavelength-converted waveguiding, a concept of nanoscale wavelength splitter is demonstrated by assembling a graded nanowire with several composition-uniform nanowires into branched nanowire structure. Our study indicates that composition-graded semiconductor nanowires would open new exciting opportunities in developing new wavelength-sensitive optical components for integrated nanophotonic devices.

Room-temperature dual-wavelength lasing from single-nanoribbon lateral heterostructures.

Nanoscale dual-wavelength lasers are attractive for their potential applications in highly integrated photonic devices. Here we report the growth of nanoribbon lateral heterostructures made of a CdS(x)Se(1-x) central region with epitaxial CdS lateral sides using a multistep thermal evaporation route with a moving source. Under laser excitation, the emission of these ribbons indicates sandwich-like structures along the width direction, with characteristic red emission in the center and green emission at both edges. More importantly, dual-wavelength lasing with tunable wavelengths is demonstrated at room temperature based on these single-nanoribbon heterostructures for the first time. These achievements represent a significant advance in designing nanoscale dual-wavelength lasers and have the potential to open up new and exciting opportunities for diverse applications in integrated photonics, optoelectronics, and sensing.

On-nanowire spatial band gap design for white light emission.

We demonstrated a substrate-moving vapor-liquid-solid (VLS) route for growing composition gradient ZnCdSSe alloy nanowires. Relying on temperature-selected composition deposition along their lengths, single tricolor ZnCdSSe alloy nanowires with engineerable band gap covering the entire visible range were obtained. The photometric property of these tricolor nanowires, which was determined by blue-, green-, and red-color emission intensities, can be in turn controlled by their corresponding emission lengths. More particularly, under carefully selected growth conditions, on-nanowire white light emission has been achieved. Band-gap-engineered semiconductor alloy nanowires demonstrated here may find applications in broad band light absorption and emission devices.

Spatial bandgap engineering along single alloy nanowires.

Bandgap engineering of semiconductor nanowires is important in designing nanoscale multifunctional optoelectronic devices. Here, we report a facile thermal evaporation method, and realize the spatial bandgap engineering in single CdS(1-x)Se(x) alloy nanowires. Along the length of these achieved nanowires, the composition can be continuously tuned from x = 0 (CdS) at one end to x = 1 (CdSe) at the other end, resulting in the corresponding bandgap (light emission wavelength) being modulated gradually from 2.44 eV (507 nm, green light) to 1.74 eV (710 nm, red light). In spite of the existing composition (crystal lattice) transition along the length, these multicolor nanowires still possess high-quality crystallization. These bandgap engineered nanowires will have promising applications in such as multicolor display and lighting, high-efficiency solar cells, ultrabroadly spectral detectors, and biotechnology.

Single-nanostructure bandgap engineering enabled by magnetic-pulling thermal evaporation growth.

Realizing the substantial potential of bottom-up 1D semiconductor nanostructures in developing functional nanodevices calls for dedicated single-nanostructure bandgap engineering by various growth approaches. Although thermal evaporation has been advised as a facile approach for most semiconductors to form 1D nanostructures from bottom-up, its capability of achieving single-nanostructure bandgap engineering was considered a challenge. In 2011, we succeeded in the direct growth of composition-graded CdS1-x Se x (0 ≤ x ≤ 1) nanowires by upgrading the thermal-evaporation tube furnace with a home-made magnetic-pulling module. This report aims to provide a comprehensive review of the latest advances in the single-nanostructure bandgap engineering enabled by the magnetic-pulling thermal evaporation growth. The report begins with the description of different magnetic-pulling thermal evaporation strategies associated with diverse examples of composition-engineered 1D nanostructures. Following is an elaboration on their optoelectronic applications based on the resulting single-nanostructure bandgap engineering, including monolithic white-light sources, proof-of-concept asymmetric light propagation and wavelength splitters, monolithic multi-color and white-light lasers, broadband-response photodetectors, high-performance transistors, and recently the most exciting single-nanowire spectrometer. In the end, this report concludes with some personal perspectives on the directions toward which future research might be advanced.

Fluoroolefins as amide bond mimics in dipeptidyl peptidase IV inhibitors.

The synthesis, selectivity, rat pharmacokinetic profile, and drug metabolism profiles of a series of potent fluoroolefin-derived DPP-4 inhibitors (4) are reported. A radiolabeled fluoroolefin 33 was shown to possess a high propensity to form reactive metabolites, thus revealing a potential liability for this class of DPP-4 inhibitors.

High-Gain 200 ns Photodetectors from Self-Aligned CdS-CdSe Core-Shell Nanowalls.

1D core-shell heterojunction nanostructures have great potential for high-performance, compact optoelectronic devices owing to their high interface area to volume ratio, yet their bottom-up assembly toward scalable fabrication remains a challenge. Here the site-controlled growth of aligned CdS-CdSe core-shell nanowalls is reported by a combination of surface-guided vapor-liquid-solid horizontal growth and selective-area vapor-solid epitaxial growth, and their integration into photodetectors at wafer-scale without postgrowth transfer, alignment, or selective shell-etching steps. The photocurrent response of these nanowalls is reduced to 200 ns with a gain of up to 3.8 × 103 and a photoresponsivity of 1.2 × 103 A W-1 , the fastest response at such a high gain ever reported for photodetectors based on compound semiconductor nanostructures. The simultaneous achievement of sub-microsecond response and high-gain photocurrent is attributed to the virtues of both the epitaxial CdS-CdSe heterojunction and the enhanced charge-separation efficiency of the core-shell nanowall geometry. Surface-guided nanostructures are promising templates for wafer-scale fabrication of self-aligned core-shell nanostructures toward scalable fabrication of high-performance compact photodetectors from the bottom-up.

Template-free synthesis of ordered ZnO@ZnS core-shell arrays for high performance supercapacitors.

In this article, ordered ZnO@ZnS core-shell structures have been produced on a stainless mesh by a two-step approach without using a template. ZnO nanorods fabricated by a chemical vapor method are transferred into a 50 ml autoclave for a second stage ion-exchange reaction followed by heating at 120 °C for 4-16 h. The ZnO core is prepared as the conducting channel and ZnS as the active material. Such unique architecture exhibits remarkable electrochemical performance with high capacitance and desirable cycle life. When evaluating as the electrode for supercapacitors, the ZnO@ZnS core-shell structure delivers a high specific capacitance of 603.8 F g-1 at a current density of 2 A g-1, with 9.4% capacitance loss after cycling 3000 times. The fabrication strategy presented here is simple and cost-effective, which can open new avenues for large-scale applications of the novel materials in energy storage.

On-Nanowire Axial Heterojunction Design for High-Performance Photodetectors.

We report the growth of high-quality CdS/CdSxSe1-x axial heterostructure nanowires (NWHs) via a temperature-controlled chemical vapor deposition method. Microstructural characterizations revealed that these NWHs have a single-crystalline structure with abrupt heterojunctions. Local photoluminescence and mapping near the heterojunctions show only two separated narrow band-edge emission bands from the two different adjacent semiconductors, further demonstrating the high-quality of these heterostructures. Moreover, the photodetector based on the single NWH shows a performance (higher responsivity (1.18 × 10(2) A/W), faster response speed (rise ∼68 µs, decay ∼137 µs), higher Ion/Ioff ratio (10(5)), higher EQE (3.1 × 10(4) %), and broader detection range (350-650 nm)) at room temperature superior to that of photodetectors based on single band gap nanostructures. This work suggests a much simpler route to achieve superior NWHs for applications in optoelectronic devices.