How antiferromagnetism drives the magnetization of a ferromagnetic thin film to align out of plane.

Interfacial moments of an antiferromagnet are known for their prominent effects of induced coercivity enhancement and exchange bias in ferromagnetic-antiferromagnetic exchange-coupled systems. Here we report that the unpinned moments of an antiferromagnetic face-centered-cubic Mn layer can drive the magnetization of an adjacent Fe film perpendicular owing to a formation of intrinsic perpendicular anisotropy. X-ray magnetic circular dichroism and hysteresis loops show establishment of perpendicular magnetization on Fe/Mn bilayers while temperature was decreased. The fact that the magnitude of perpendicular anisotropy of the Fe layer is enhanced proportionally to the out-of-plane oriented orbital moment of the Mn unpinned layer, rather than that of Fe itself, gives evidence for the Mn unpinned moments to be the origin of the established perpendicular magnetization.

Electrically programmable magnetoresistance in [Formula: see text]-based magnetic tunnel junctions.

We report spin-dependent transport properties and I-V hysteresis characteristics in an [Formula: see text]-based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the [Formula: see text] layer. The role played by oxygen vacancies in [Formula: see text] is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states in a single [Formula: see text]-based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices.

Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI.

Surfaces of semiconductors with strong spin-orbit coupling are of great interest for use in spintronic devices exploiting the Rashba effect. BiTeI features large Rashba-type spin splitting in both valence and conduction bands. Either can be shifted towards the Fermi level by surface band bending induced by the two possible polar terminations, making Rashba spin-split electron or hole bands electronically accessible. Here we demonstrate the first real-space microscopic identification of each termination with a multi-technique experimental approach. Using spatially resolved tunnelling spectroscopy across the lateral boundary between the two terminations, a previously speculated on p-n junction-like discontinuity in electronic structure at the lateral boundary is confirmed experimentally. These findings realize an important step towards the exploitation of the unique behaviour of the Rashba semiconductor BiTeI for new device concepts in spintronics.