A methodical study of quantum phase engineering in topological crystalline insulator SnTe and related alloys.

Topological crystalline insulators (TCIs) are particularly one of the most fascinating materials in current research. The gapless surface states protected by the crystal point group symmetries in TCIs entail the emergence of nontrivial physics and can be tailored by controlling the external perturbations. This paper is devoted to a detailed analysis of the perturbation effects on the quantum phase of SnTe(001) surface states. Generically, surface states are gradually perturbed so that the gapless phase dies out. In doing so, a numerical study of the perturbed k[combining right harpoon above]·p[combining right harpoon above] model is accomplished by the linear response theory and the Green's function technique. The model is experimentally accessible. The system displays a commensurate breaking of the mirror invariance imposed by external perturbations such as strain, magnetic proximity effect/electric field/Zeeman magnetic field, Rashba spin-orbit coupling, and dilute charged impurity. The interesting behaviors are explained by the variation of the gap with the above-mentioned perturbations (invoking the opening of the gap) at Dirac cones corresponding to the TCI phase. For suitably tuned parameters, SnTe(001) surface states realize gapped phases. The synergy of perturbations is responsible for breaking down the topologically non-trivial character of SnTe and related alloys. Further, the conditions under which the variations of the parameters maintain the topological properties are discussed. These findings and predictions report that, besides a vast number of TCI applications, TCIs are versatile candidates for topological transistors with tunable ON and OFF states if appropriate tuning of the surface band gap can be performed experimentally.

Optical interband transitions in strained phosphorene.

In this paper, we have concentrated on the orbital and hybridization effects induced by applied triaxial strain on the interband optical conductivity (IOC) of phosphorene using a two-band Hamiltonian model, linear response theory and the Kubo formula. In particular, we study the dependence of the electronic band structure and of the IOC of a phosphorene single layer on the modulus and direction of the applied triaxial strain. The triaxial strain is included in a model through the introduction of strain-dependent hopping parameters using the Harrison rule. Among the various configurations for applying the triaxial strain, considerable findings are presented here in three classes: (i) uniform, (ii) in-plane uniform and (iii) non-uniform triaxial strain. The main consequence of applying triaxial strain is that of increasing and decreasing the band gap depending on the considered class of study, resulting in a blue shift and red shift of the interband optical transitions, respectively. Our results show that a pure blue shift independent of the strain modulus as well as strain sign (tensile or compressive) emerges when applying non-uniform triaxial strain. The overall feature of our outcomes is tailoring the edge-dependent optical responses of phosphorene in the presence of triaxial strain, which provides the required conditions of tuning the optical properties of phosphorene for future experimental research.

Anisotropic ferroelectric distortion effects on the RKKY interaction in topological crystalline insulators.

Manipulation of electronic and magnetic properties of topological materials is a topic of much interest in spintronic and valleytronic applications. Perturbation tuning of multiple Dirac cones on the (001) surface of topological crystalline insulators (TCIs) is also a related topic of growing interest. Here we show the numerical evidence for the ferroelectric structural distortion effects on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between two magnetic impurity moments on the SnTe (001) and related alloys. The mirror symmetry breaking between Dirac cones induced by the ferroelectric distortion could be divided into various possible configurations including the isotropically gapped, coexistence of gapless and gapped, and anisotropically gapped phases. Based on the retarded perturbed Green's functions of the generalized gapped Dirac model, we numerically find the RKKY response for each phase. The distortion-induced symmetry breaking constitutes complex and interesting magnetic responses between magnetic moments compared to the pristine TCIs. In the specific case of coexisted gapless and gapped phases, a nontrivial behavior of the RKKY interaction is observed, which has not been seen in other Dirac materials up until now. For two impurities resided on the same sublattices, depending on the distortion strength, magnetic orders above of a critical impurity separation exhibit irregular ferromagnetic ⇔ antiferromagnetic phase transitions. However, independent of the impurity separation and distortion strength, no phase transition emerges for two impurities resided on different sublattices. This essential study sheds light on magnetic properties of Dirac materials with anisotropic mass terms and also makes TCIs applications relatively easy to understand.

Systematic competition between strain and electric field stimuli in tuning EELS of phosphorene.

The strongly anisotropic properties of phosphorene makes it an attractive material for applications in deciding the specific direction for different purposes. Here we have particularly reported the competition between strain and electric field stimuli in evaluating the band gap and electron energy loss spectrum (EELS) of single-layer black phosphorus using the tight-binding method and the Kubo conductivity. We construct possible configurations for this competition and evaluate the interband optical excitations considering the corresponding band gap variations. The band gap increases with the individual electric field, while it increases (decreases) with tensile (compressive) uniaxial in-plane strain. Contrary to the in-plane strains, the uniaxial out-of-plane strain shows a critical strain at which the system suffers from a phase transition. Furthermore, the presence of these stimuli simultaneously results in an extraordinary band gap engineering. Based on the EELS response in the electromagnetic spectrum, the armchair (zigzag) direction is classified into the infrared and visible (ultraviolet) region. We report that the electric field gives rise to the blue shift in the interband optical transitions along the armchair direction, while the compressive/tensile (tensile/compressive) in-plane/out-of-plane strain provides a red (blue) shift. Moreover, we observe an inverse behavior of EELS response to the individual and combined effects of electric field and strains compared to the band gap behavior except at critical out-of-plane strain for which the physical theory of interband excitation is simply violated. Our results provide a new perspective on the applicability of phosphorene in stimulated optical applications.

Spin-splitting effects on the interband optical conductivity and activity of phosphorene.

Being able to tune the anisotropic interband transitions in phosphorene at finite temperature offers an enormous amount of possibilities in finding new insights in the optoelectronic community. To contribute to this goal we propose a Zeeman spin-splitting field aiming at absorbing various frequencies of the incident light. Employing the tight-binding Hamiltonian to describe the carrier dynamics and the Kubo formalism to formulate the orientation-dependent interband optical conductivity (IOC) and optical activity of phosphorene we investigate the absorption and scattering mechanisms in phosphorene depending on the Zeeman field strength and optical energy parameters. The optical activity features are characterized by exploring the eccentricity and shift phase of reflected and transmitted electromagnetic waves of the incident light. Different electronic phases in the absence and presence of Zeeman field ultimate different types of interband transitions of which in all cases the IOC along the armchair direction is larger than the zigzag one. However, we observed an irregular (regular) process for IOC with the Zeeman field along the armchair (zigzag) direction, resulting in irregular (regular) absorption and scattering mechanisms. Additionally, a little to no effects for temperature-dependent IOC are provided with the Zeeman field in undoped phosphorene. Further, almost linearly and elliptically polarizations are reported for the transmitted and reflected waves, respectively, indicating that the phosphorene is almost transparent. The emergence of Zeeman spin-splitting effects in optoelectronic properties of phosphorene is pleasant to make it a great potential candidate for logic applications.

Strain engineering of optical activity in phosphorene.

Optical activity is one of the most fascinating fields in current physics. The strong anisotropic feature in monolayer phosphorene leads to the emergence of non-trivial optoelectronic physics. This paper is devoted to a detailed analysis of strain effects on the optical activity of phosphorene ranging from low-optical-field to high-optical-field. To do so, a numerical study of the two-band tight-binding model is accomplished using the Harrison rule and the linear response theory. Although the transparency of phosphorene confirms at all frequencies independent of the strain modulus and direction, on average, from low- to high-optical-field limit, the polarization of the reflected wave at critical strains becomes circular and the ellipse axis tends to a rotation of 180°. It is found that the maximum absorption takes place at high-energy transitions, which quantitatively depends strongly on the strain modulus and direction. Furthermore, a detailed investigation of compressive and tensile strains results in the dominant contribution of the in-plane compressive and out-of-plane tensile strains to the reflected/transmitted light for low- and intermediate-optical-field ranges, whilst both contribute for the high-optical-field limit. However, overall, in-plane compressive and out-of-plane tensile strains come in to play a role in the absorption spectra. Thereby, the quality of the determined reflection, transmission and absorption waves depends on the regarded regime of the optical field, strain modulus, and strain orientation. These findings if sufficient can be performed and/or tuned experimentally, and a vast number of phosphorene-based optoelectronic devices can be achieved.

Modified tailoring the electronic phase and emergence of midstates in impurity-imbrued armchair graphene nanoribbons.

We theoretically address the electronic structure of mono- and simple bi-layer armchair graphene nanoribbons (AGNRs) when they are infected by extrinsic charged dilute impurity. This is done with the aid of the modified tight-binding method considering the edge effects and the Green's function approach. Also, the interplay of host and guest electrons are studied within the full self-consistent Born approximation. Given that the main basic electronic features can be captured from the electronic density of states (DOS), we focus on the perturbed DOS of lattices corresponding to the different widths. The modified model says that there is no metallic phase due to the edge states. We found that the impurity effects lead to the emergence of midgap states in DOS of both systems so that a semiconductor-to-semimetal phase transition occurs at strong enough impurity concentrations and/or impurity scattering potentials. The intensity of semiconductor-to-semimetal phase transition in monolayer (bilayer) ultra-narrow (realistic) ribbons is sharper than bilayers (monolayers). In both lattices, electron-hole symmetry breaks down as a result of induced-impurity states. The findings of this research would provide a base for future experimental studies and improve the applications of AGNRs in logic semiconductor devices in industry.