Protection of Si Nanowires against Aß Toxicity by the Inhibition of Aß Aggregation.

Alzheimer's disease (AD) is a progressive neurodegenerative disease characterized by the accumulation of amyloid beta (Aß) plaques in the brain. Aß1-42 is the main component of Aß plaque, which is toxic to neuronal cells. Si nanowires (Si NWs) have the advantages of small particle size, high specific surface area, and good biocompatibility, and have potential application prospects in suppressing Aß aggregation. In this study, we employed the vapor-liquid-solid (VLS) growth mechanism to grow Si NWs using Au nanoparticles as catalysts in a plasma-enhanced chemical vapor deposition (PECVD) system. Subsequently, these Si NWs were transferred to a phosphoric acid buffer solution (PBS). We found that Si NWs significantly reduced cell death in PC12 cells (rat adrenal pheochromocytoma cells) induced by Aß1-42 oligomers via double staining with 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) and fluorescein diacetate/propyl iodide (FDA/PI). Most importantly, pre-incubated Si NWs largely prevented Aß1-42 oligomer-induced PC12 cell death, suggesting that Si NWs exerts an anti-Aß neuroprotective effect by inhibiting Aß aggregation. The analysis of Fourier Transform Infrared (FTIR) results demonstrates that Si NWs reduce the toxicity of fibrils and oligomers by intervening in the formation of ß-sheet structures, thereby protecting the viability of nerve cells. Our findings suggest that Si NWs may be a potential therapeutic agent for AD by protecting neuronal cells from the toxicity of Aß1-42.

Regionalizing Nitrogen Doping of Polysilicon Films Enabling High-Efficiency Tunnel Oxide Passivating Contact Silicon Solar Cells.

Tunnel oxide passivating contact (TOPCon) solar cells (SCs) as one of the most competitive crystalline silicon (c-Si) technologies for the TW-scaled photovoltaic (PV) market require higher passivation performance to further improve their device efficiencies. Here, the successful construction of a double-layered polycrystalline silicon (poly-Si) TOPCon structure is reported using an in situ nitrogen (N)-doped poly-Si covered by a normal poly-Si, which achieves excellent passivation and contact properties simultaneously. The new design exhibits the highest implied open-circuit voltage of 755 mV and the lowest single-sided recombination current density (J0 ) of ≈0.7 fA cm⁻2 for a TOPCon structure and a low contact resistivity of less than 5 mΩ·cm2 , resulting in a high selectivity factor of ≈16. The mechanisms of passivation improvement are disclosed, which suggest that the introduction of N atoms into poly-Si restrains H overflow by forming stronger Si-N and N-H bonds, reduces interfacial defects, and induces favorable energy bending. Proof-of-concept TOPCon SCs with such a design receive a remarkable certified efficiency of 25.53%.

Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation.

Solid-state self-powered UV detection is strongly required in various application fields to enable long-term operation. However, this requirement is incompatible with conventionally used metal-semiconductor-metal (MSM) UV photodetectors (PDs) due to the symmetric design of Schottky contacts. In this work, a self-powered MSM solar-blind UV-PD was realized using a lateral pn junction architecture. A large built-in electric field was obtained in the MSM-type UV-PD without impurity doping, leading to efficiency carrier separation and enhanced photoresponsivity at zero external bias. The solar-blind UV-PD exhibits a cutoff wavelength of 280 nm, a photo/dark current ratio of over 105, and a responsivity of 425.13 mA/W at -10 V. The mechanism of self-powered UV photodetection was further investigated by TCAD simulation of the internal electric field and carrier distributions.

Novel polysilicon in resisting thermal-evaporation Al-electrode damage and its application in back-junction passivated contact p-type solar cells.

In preparing tunnel oxygen passivation contact (TOPCon) solar cells, the metallization process often causes damage to passivation performance. Aiming to solve the issue, we investigated the advantages of the novel polysilicon, i.e. the carbon (C) or nitrogen (N) doped polysilicon, in resisting metallization damage. Our study reveals that C- or N-doped polysilicon does mitigate the passivation damage caused by the physical-vapor deposition metallization processes, i.e. the decrease in implied open-circuit voltage (iVoc) and the increase in recombination current (J0) are both suppressed. For the novel polysilicon samples suffered metallization, the decrease ofiVocwas only ∼-1 mV, and the increase ofJ0< 1 fA cm-2; in contrast, the decrease ofiVocof the standard polysilicon samples was -7 mV, and the increase ofJ0was ∼6 fA cm-2. In addition, we also explored the difference between the finger-metal and the full-metal metallization, showing that the finger-metal has less passivation damage due to the smaller contact area. However, the free energy loss analysis indicates that the advantage of the novel polysilicon in resisting metallization damage is overshadowed by the disadvantage of the higher contact resistivity when finger-metal electrodes are used. Numerical simulations prove that the efficiency of the solar cell with novel polysilicon still shows >0.2% absolute efficiency higher than that with the standard polysilicon, reaching 26% when full-metal electrodes by thermal evaporation.

50-µm thick flexible dopant-free interdigitated-back-contact silicon heterojunction solar cells with front MoOx coatings for efficient antireflection and passivation.

We demonstrate experimentally a flexible crystalline silicon (c-Si) solar cell (SC) based on dopant-free interdigitated back contacts (IBCs) with thickness of merely 50 µm for, to the best of our knowledge, the first time. A MoOx thin film is proposed to cover the front surface and the power conversion efficiency (PCE) is boosted to over triple that of the uncoated SC. Compared with the four-time thicker SC, our thin SC is still over 77% efficient. Systematic studies show the front MoOx film functions for both antireflection and passivation, contributing to the excellent performance. A double-interlayer (instead of a previously-reported single interlayer) is identified at the MoOx/c-Si interface, leading to efficient chemical passivation. Meanwhile, due to the large workfunction difference, underneath the interface a strong built-in electric field is generated, which intensifies the electric field over the entire c-Si active layer, especially in the 50-µm thick layer. Photocarriers are expelled quickly to the back contacts with less recombined and more extracted. Besides, our thin IBC SC is highly flexible. When bent to a radius of 6 mm, its PCE is still 76.6% of that of the unbent cell. Fabricated with low-temperature and doping-free processes, our thin SCs are promising as cost-effective, light-weight and flexible power sources.

Tuning oxygen vacancies in epitaxial LaInO3 films for ultraviolet photodetection.

LaInO3 (LIO) represents a new, to the best of knowledge, type of perovskite oxides for deep-ultraviolet (DUV) photodetection owing to the wide bandgap nature (∼5.0 eV) and the higher tolerance of defect engineering for tunable carrier transport. Here we fabricate fast-response DUV photodetectors based on epitaxial LIO thin films and demonstrate an effective strategy for balancing the photodetector performance using the oxygen growth pressure as a simple control parameter. Increasing the oxygen pressure is effective to suppress the oxygen vacancy formation in LIO, which is beneficial to suppress the dark current and enhance the response speed. The optimized LIO photodetector achieves a fast rise/fall time of 20 ms/73 ms, a low dark current of 2.0 × 10-12 A, a photo-to-dark current ratio of 1.2 × 103, and a detectivity of 6 × 1012 Jones.

Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n+/n- homojunction from opposite polarity domains.

We report a GaN-based self-powered metal-semiconductor-metal (MSM)-type ultraviolet (UV) photodetector (PD) by employing a "lateral polarity structure (LPS)" grown on the sapphire substrate. An in-plane internal electric field and different Schottky barrier heights at a metal/semiconductor interface lead to efficient carrier separation and self-powered UV detection. A dark current of 6.8nA/cm2 and detectivity of 1.0×1012 Jones were obtained without applied bias. A high photo-to-dark current ratio of 1.2×104 and peak responsivity of 933.7 mA/W were achieved for the lateral polarity structure-photodetector (LPS-PD) under -10V. The enhanced performance of the LPS-PD was ascribed to the polarization-induced carrier separation as demonstrated by the lateral band diagram.

Demonstration of ohmic contact using ${{\rm MoO}_{\rm x}}/{\rm Al}$MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs.

The ${{\rm MoO}_{\rm x}}/{\rm Al}$MoOx/Al electrode was designed and fabricated on p-GaN and sapphire with good ohmic behavior and decent deep ultraviolet (DUV) reflectivity, respectively. The influences of ${{\rm MoO}_{\rm x}}$MoOx thickness and annealing condition on the electrical and optical behaviors of the ${{\rm MoO}_{\rm x}}/{\rm Al}$MoOx/Al structure were investigated. Surface morphology of ${{\rm MoO}_{\rm x}}$MoOx with different thicknesses reveals a 3D growth mode. Partial decomposition of ${{\rm MoO}_{\rm x}}$MoOx was discovered, which helps in the formation of ohmic contact between ${{\rm MoO}_{\rm x}}$MoOx and Al. The potential for application in deep ultraviolet light-emitting-diodes (DUV-LEDs) has also been demonstrated.

Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate.

The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality and lasing behavior of the GaN microdisks was also demonstrated.

Design and simulation of perovskite solar cells with Gaussian structured gradient-index optics.

To unlock the full potential of the perovskite solar cell (PSC) photocurrent density and power conversion efficiency, the topic of optical management and design optimization is of absolute importance. Here, we propose a gradient-index optical design of the PSC based on a Gaussian-type front-side glass structure. Numerical simulations clarify a broadband light-harvesting response of the new design, showing that a maximal photocurrent density of 23.35 mA/cm2 may be expected, which is an increase by 1.21 mA/cm2 compared with that of the traditional flat-glass counterpart (22.14 mA/cm2). Comprehensive analysis of the electric field distributions elucidates the light-trapping mechanism. Furthermore, PSCs having the Gaussian index profile display superior optical properties and performance compared to those of the uniform index counterpart under varying conditions of perovskite layer thicknesses and incident angles. The simulation results in this study provide an effective design scheme to promote optical absorption in PSCs.

Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement.

AlGaN-based deep ultraviolet (DUV) multiple-quantum-wells (MQWs) incorporating strain-modulated nanostructures are proposed, demonstrating enhanced degree of polarization (DOP) and improved light extraction efficiency (LEE). The influence of Al composition and bi-axial strains on the optical behaviors of the DUV-MQWs were carefully examined. Compared with planar DUV-MQWs, strain-modulated nanostructure patterned MQWs show three times higher photoluminescence and increased DOP from -0.43 to -0.16. Moreover, nanostructure patterned DUV-MQWs under compressive strains further illustrate higher DOP and LEE values than those under tensile strains due to more efficient diffraction of the guided modes of the transverse electric (TE) polarized light. Our work demonstrates, for the first time, that a combination of compressive in-plane strain and surface nanostructure show unambiguous advantages in facilitating TE mode emission, thus have great promises in the design and optimization of highly efficient polarized DUV optoelectronic devices.

Thickness-modulated passivation properties of PEDOT:PSS layers over crystalline silicon wafers in back junction organic/silicon solar cells.

PEDOT: PSS/silicon heterojunction solar cell has recently attracted much attention due to the fact that it can be simply and cost-effectively fabricated. It is crucial to suppress the interfacial recombination rate between silicon (Si) and organic film for improving device efficiency. In this study, we demonstrated a thickness-dependent passivation effect, i.e. the passivation quality over Si substrate was promoted dramatically with increasing the thickness of PEDOT:PSS layer. The effective minority carrier lifetime increased from 32 µs for 50 nm to 360 µs for 200 nm, which corresponds to a change in implied open circuit voltage (V oc-implied) from 545 to 635 mV. Back-junction hybrid solar cells featuring PEDOT:PSS films at rear side were designed to enable adoption of thick PEDOT:PSS layers without having to worry about parasitic absorption, showing a power conversion efficiency (PCE) of 16.3%. Combined with a proper pre-condition on the Si substrate, the back-junction hybrid solar cell with 200 nm PEDOT:PSS layer received an enhanced PCE of 16.8%. In addition, the improved long-term stability for the back-junction device was also observed. The PCE remained 90% (unsealed) after being stored in ambient atmosphere for 30 days and over 80% (sealed) after 150 days.

Heterojunction Hybrid Solar Cells by Formation of Conformal Contacts between PEDOT:PSS and Periodic Silicon Nanopyramid Arrays.

Surface nanotexturing with excellent light-trapping property is expected to significantly increase the conversion efficiency of solar cells. However, limited by the serious surface recombination arising from the greatly enlarged surface area, the silicon (Si) nanotexturing-based solar cells cannot yet achieve satisfactory high efficiency, which is more prominent in organic/Si hybrid solar cells (HSCs) where a uniform polymer layer can rarely be conformably coated on nanotextured substrate. Here, the HSCs featuring advanced surface texture of periodic upright nanopyramid (UNP) arrays and hole-conductive conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), are investigated. The tetramethylammonium hydroxide etching is used to smooth the surface morphologies of the Si-UNPs, leading to reduced surface defect states. The uniform Si-UNPs together with silane chemical-incorporated PEDOT:PSS solution enable the simultaneous realization of excellent broadband light absorption as well as enhanced electrical contact between the textured Si and the conducting polymer. The resulting PEDOT:PSS/Si HSCs textured with UNP arrays show a promising power conversion efficiency of 13.8%, significantly higher than 12.1% of the cells based on the-state-of-the-art surface texture with random pyramids. These results provide a viable route toward shape-controlled nanotexturing-based high-performance organic/Si HSCs.

Performance enhancement of ultraviolet light emitting diode incorporating Al nanohole arrays.

Enhanced photoluminescence and improved internal quantum efficiency were demonstrated for ultraviolet light emitting diodes (UV-LEDs) with Al nanohole arrays deposited on the top surface. The effects of the thickness and periodicity of the plasmonic structures on the optical properties of UV-LEDs were studied, and an optimized nanohole array parameter was illustrated. Classical electrodynamic simulations showed that the radiated power is mostly concentrated along the edge of the Al nanohole arrays. Even though no obvious dip was observed in the transmission spectra associated with localized surface plasmon resonance, significant improvements in radiatiative recombination and light extraction efficiency were demonstrated, indicating the influence of Al nanohole arrays on the light emission control of UV-LEDs. It is anticipated that the enhanced luminescence can be obtained for various emitting wavelengths by directly adjusting the periodicity and morphology of the Al nanohole arrays and this new technology can alleviate crystal quality requirements of III-nitride thin films in the development of high efficiency UV optoelectronic devices.

Improved optical absorption in visible wavelength range for silicon solar cells via texturing with nanopyramid arrays.

Surface-texture with silicon (Si) nanopyramid arrays has been considered as a promising choice for extremely high performance solar cells due to their excellent anti-reflective effects and inherent low parasitic surface areas. However, the current techniques of fabricating Si nanopyramid arrays are always complicated and cost-ineffective. Here, a high throughput nanosphere patterning method is developed to form periodic upright nanopyramid (UNP) arrays in wafer-scale. A direct comparison with the state-of-the-art texture of random pyramids is demonstrated in optical and electronic properties. In combination with the antireflection effect of a SiNx coating layer, the periodic UNP arrays help to provide a remarkable improvement in short-wavelength response over the random pyramids, attributing to a short-current density gain of 1.35 mA/cm2. The advanced texture of periodic UNP arrays provided in this work shows a huge potential to be integrated into the mass production of high-efficiency Si solar cells.

Large-scale nanostructured low-temperature solar selective absorber.

A large-scale nanostructured low-temperature solar selective absorber is demonstrated experimentally. It consists of a silicon dioxide thin film coating on a rough refractory tantalum substrate, fabricated based simply on self-assembled, closely packed polystyrene nanospheres. Because of the strong light harvesting of the surface nanopatterns and constructive interference within the top silicon dioxide coating, our absorber has a much higher solar absorption (0.84) than its planar counterpart (0.78). Though its absorption is lower than that of commercial black paint with ultra-broad absorption, the greatly suppressed absorption/emission in the long range still enables a superior heat accumulation. The working temperature is as high as 196.3°C under 7-sun solar illumination in ambient conditions-much higher than those achieved by the two comparables.

Fabrication of highly ordered 2D metallic arrays with disc-in-hole binary nanostructures via a newly developed nanosphere lithography.

2D metallic arrays with binary nanostructures derived from a nanosphere lithography (NSL) method have been rarely reported. Here, we demonstrate a novel NSL strategy to fabricate highly ordered 2D gold arrays with disc-in-hole binary (DIHB) nanostructures in large scale by employing a sacrificing layer combined with a three-step lift-off process. The structural parameters of the resultant DIHB arrays, such as periodicity, hole diameter, disc diameter and thicknesses can be facilely controlled by tuning the nanospheres size, etching condition, deposition angle and duration, respectively. Due to the intimate interactions between two subcomponents, the DIHB arrays exhibit both an extraordinary high surface-enhanced Raman scattering enhancement factor up to 5 × 108 and a low sheet resistance down to 1.7 Ω/sq. Moreover, the DIHB array can also be used as a metal catalyzed chemical etching catalytic pattern to create vertically-aligned Si nano-tube arrays for anti-reflectance application. This strategy provides a universal route for synthesizing other diverse binary nanostructures with controlled morphology, and thus expands the applications of the NSL to prepare ordered nanostructures with multi-function.

Broadband and wide-angle light harvesting by ultra-thin silicon solar cells with partially embedded dielectric spheres.

We propose a design of crystalline silicon thin-film solar cells (c-Si TFSCs, 2 µm-thick) configured with partially embedded dielectric spheres on the light-injecting side. The intrinsic light trapping and photoconversion are simulated by the complete optoelectronic simulation. It shows that the embedding depth of the spheres provides an effective way to modulate and significantly enhance the optical absorption. Compared to the conventional planar and front sphere systems, the optimized partially embedded sphere design enables a broadband, wide-angle, and strong optical absorption and efficient carrier transportation. Optoelectronic simulation predicts that a 2 µm-thick c-Si TFSC with half-embedded spheres shows an increment of more than 10 mA/cm2 in short-circuit current density and an enhancement ratio of more than 56% in light-conversion efficiency, compared to the conventional planar counterparts.

TiO2 hierarchical sub-wavelength microspheres for high efficiency dye-sensitized solar cells.

Monodisperse anatase hierarchical microspheres were produced via a simple sol-gel process. These microspheres in the sub-wavelength diameter of 320-750 nm could scatter visible light efficiently as whispering gallery modes (WGM) corresponding to the dye sensitized wavelength, and load a large number of dye molecules with a large surface area (149.82 m2 g-1). Dye-sensitized solar cells (DSCs) based on the microsphere monolayer adsorbed light fully over the entire wavelength region and facilitated electrolyte diffusion due to larger voids between the microspheres, compared to the conventional film. Furthermore, the dynamics of electron transport and recombination was investigated systematically, indicating the higher charge collection efficiency of the TiO2 microsphere film. Overall, DSCs based on the 7.5 µm hierarchical microsphere monolayer exhibited more outstanding photovoltaic performances, yielding a high power conversion efficiency (PCE) of 11.43% under simulated AM 1.5 sunlight. Half of the normal film thickness was used to cut the device cost significantly.

Large-Area Nanosphere Self-Assembly by a Micro-Propulsive Injection Method for High Throughput Periodic Surface Nanotexturing.

A high throughput surface texturing process for optical and optoelectric devices based on a large-area self-assembly of nanospheres via a low-cost micropropulsive injection (MPI) method is presented. The novel MPI process enables the formation of a well-organized monolayer of hexagonally arranged nanosphere arrays (NAs) with tunable periodicity directly on the water surface, which is then transferred onto the preset substrates. This process can readily reach a throughput of 3000 wafers/h, which is compatible with the high volume photovoltaic manufacturing, thereby presenting a highly versatile platform for the fabrication of periodic nanotexturing on device surfaces. Specifically, a double-sided grating texturing with top-sided nanopencils and bottom-sided inverted-nanopyramids is realized in a thin film of crystalline silicon (28 µm in thickness) using chemical etching on the mask of NAs to significantly enhance antireflection and light trapping, resulting in absorptions nearly approaching the Lambertian limit over a broad wavelength range of 375-1000 nm and even surpassing this limit beyond 1000 nm. In addition, it is demonstrated that the NAs can serve as templates for replicas of three-dimensional conformal amorphous silicon films with significantly enhanced light harvesting. The MPI induced self-assembly process may provide a universal and cost-effective solution for boosting light utilization, a problem of crucial importance for ultrathin solar cells.