Ultra-small mode area V-groove waveguide design for on-chip single-photon emission.

We numerically investigate the figures of merit for single-photon emission in a planar GaAs-on-insulator waveguide featuring a V-groove geometry. Thanks to a field enhancement effect arising due to boundary conditions of this waveguide, the structure features an ultra-small mode area enabling a factor of a maximum 2.8 times enhancement of the Purcell factor for quantum dot and a more significant 7 times enhancement for the atomic-size solid-state emitters with the aligned dipole orientation. In addition, the coupling efficiency to the fundamental quasi-TE mode is also improved. To take into account potential on-chip integration, we further show that the V-groove mode profile can be converted using a tapering section to the mode profile of a standard ridge waveguide while maintaining both the high Purcell factor and the good fundamental mode coupling efficiency.

Experimental demonstration of a nanobeam Fano laser.

Microscopic single-mode lasers with low power consumption, large modulation bandwidth, and ultra-narrow linewidth are essential for numerous applications, such as on-chip photonic networks. A recently demonstrated microlaser using an optical Fano resonance between a discrete mode and a continuum of modes to form one of the mirrors, i.e., the so-called Fano laser, holds great promise for meeting these requirements. Here, we suggest and experimentally demonstrate what we believe is a new configuration of the Fano laser based on a nanobeam geometry. Compared to the conventional two-dimensional photonic crystal geometry, the nanobeam structure makes it easier to engineer the phase-matching condition that facilitates the realization of a bound-state-in-the-continuum (BIC). We investigate the laser threshold in two scenarios based on the new nanobeam geometry. In the first, classical case, the gain is spatially located in the part of the cavity that supports a continuum of modes. In the second case, instead, the gain is located in the region that supports a discrete mode. We find that the laser threshold for the second case can be significantly reduced compared to the conventional Fano laser. These results pave the way for the practical realization of high-performance microlasers.

Dissipative Kerr soliton generation at 2µm in a silicon nitride microresonator.

Chip-scale optical frequency combs enable the generation of highly-coherent pulsed light at gigahertz-level repetition rates, with potential technological impact ranging from telecommunications to sensing and spectroscopy. In combination with techniques such as dual-comb spectroscopy, their utilization would be particularly beneficial for sensing of molecular species in the mid-infrared spectrum, in an integrated fashion. However, few demonstrations of direct microcomb generation within this spectral region have been showcased so far. In this work, we report the generation of Kerr soliton microcombs in silicon nitride integrated photonics. Leveraging a high-Q silicon nitride microresonator, our device achieves soliton generation under milliwatt-level pumping at 1.97 µm, with a generated spectrum encompassing a 422 nm bandwidth and extending up to 2.25 µm. The use of a dual pumping scheme allows reliable access to several comb states, including primary combs, modulation instability combs, as well as multi- and single-soliton states, the latter exhibiting high stability and low phase noise. Our work extends the domain of silicon nitride based Kerr microcombs towards the mid-infrared using accessible factory-grade technology and lays the foundations for the realization of fully integrated mid-infrared comb sources.

Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding.

Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 µm-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.

Bidirectional electrostatic MEMS-tunable VCSELs.

Microelectromechanical system (MEMS) vertical cavity surface-emitting lasers (VCSELs) are the fastest coherently tunable lasers (nm/ns) due to their unique Doppler-assisted tuning mechanism. However, in standard electrostatic actuation, the response is highly nonlinear and large (>100 V) dynamic voltages are needed for MHz sweep rates. We present a bidirectional MEMS VCSEL as a solution to these challenges where static voltages can be used to enable substantially linear and amplified wavelength tuning with respect to the fast tuning (MEMS) voltage. Using an InP/SOI MEMS bonded structure, we show a tuning range of 54.5 nm (gain limited) centered around 1586 nm at an actuation frequency of 2.73 MHz.

Surface defect effects in AlGaAs-on-Insulator photonic waveguides.

We report on our study of optical losses due to sub-band-gap absorption in AlGaAs-on-Insulator photonic nano-waveguides. Via numerical simulations and optical pump-probe measurements, we find that there is significant free carrier capture and release by defect states. Our measurements of the absorption of these defects point to the prevalence of the well-studied EL2 defect, which forms near oxidized (Al)GaAs surfaces. We couple our experimental data with numerical and analytical models to extract important parameters related to surface states, namely the coefficients of absorption, surface trap density and free carrier lifetime.

Design of a robust photonic crystal mirror for MEMS VCSELs.

Wavelength tunable lasers with narrow dynamic linewidths are essential in many applications, such as optical coherence tomography and LiDAR. In this letter, we present a 2D mirror design that provides large optical bandwidth and high reflection while being stiffer than 1D mirrors. Specifically, we investigate the effect of rounded corners of rectangles as they are transferred from the CAD to the wafer by lithography and etching.

Thermorefractive noise reduction of photonic molecule frequency combs using an all-optical servo loop.

Phase and frequency noise originating from thermal fluctuations is commonly a limiting factor in integrated photonic cavities. To reduce this noise, one may drive a secondary "servo/cooling" laser into the blue side of a cavity resonance. Temperature fluctuations which shift the resonance will then change the amount of servo/cooling laser power absorbed by the device as the laser moves relatively out of or into the resonance, and thereby effectively compensate for the fluctuation. In this paper, we use a low noise laser to demonstrate this principle for the first time in a frequency comb generated from a normal dispersion photonic molecule micro-resonator. Significantly, this configuration can be used with the servo/cooling laser power above the usual nonlinearity threshold since resonances with normal dispersion are available. We report a 50 % reduction in frequency noise of the comb lines in the frequency range of 10 kHz to 1 MHz and investigate the effect of the secondary servo/cooling noise on the comb.

Crosstalk-free all-optical switching enabled by Fano resonance in a multi-mode photonic crystal nanocavity.

We demonstrate all-optical switching using a multi-mode membranized photonic crystal nanocavity exploiting the free-carrier induced dispersion in InP and the sharp asymmetric lineshape of Fano resonances. A multi-mode cavity is designed to sustain two spatially overlapping modes with a spectral spacing of 18 nm. The measured transmission spectrum of the fabricated device shows multiple asymmetric Fano resonances as predicted by optical simulations. The capabilities of the device are benchmarked by comparing a wavelength conversion from 1538.2 nm to 1565.2 nm with a single-mode wavelength conversion at 1566.2 nm on the same device. The results show an improvement in signal quality with a 5.6 dB power penalty reduction at the receiver as well as in energy efficiency with a reduction of the pump power from 534 fJ/bit to 445 fJ/bit.

Suppression of avoided resonance crossing in microresonators.

Kerr frequency comb generation in microresonators is enabled by notable developments in fabrication technology and novel nonlinear material platforms. However, even in a low loss and highly nonlinear microresonator, the avoided resonance crossing may hamper reliable frequency comb generation. We present a method to suppress the avoided resonance crossing induced by polarization mode coupling. Our approach employs a filter waveguide coupled to a microring resonator for selective filtering of the TM00 mode while keeping the operational TE00 mode with low loss. We experimentally demonstrate an avoided-crossing-suppressed microresonator in the AlGaAs-on-insulator platform.

Octave-spanning coherent supercontinuum generation in an AlGaAs-on-insulator waveguide.

We demonstrate supercontinuum generation over an octave spaning from 1055 to 2155 nm on the highly nonlinear aluminum gallium arsenide (AlGaAs)-on-insulator platform. This is enabled by the generation of two dispersive waves in a 3-mm-long dispersion-engineered nano-waveguide. The waveguide is pumped at telecom wavelengths (1555 nm) with 3.6 pJ femtosecond pulses. We experimentally validate the coherence of the generated supercontinuum around the pump wavelength (1450-1750 nm), and our numerical simulation shows a high degree of coherence over the full spectrum.

744-nm wavelength conversion of PAM-4 signal using an AlGaAsOI nanowaveguide.

Exploring new frequency bands for optical transmission is essential to overcome the capacity crunch. The 2-µm band is becoming a research spotlight due to available broadband thulium-doped fiber amplifiers as well as low-latency, low-loss hollow-core fibers. Yet most of the 2-µm band devices designed for optical communication are still in their infancy. In this Letter, we propose wavelength conversion based on four-wave mixing in a highly nonlinear AlGaAsOI nanowaveguide to bridge the 2-µm band and the conventional bands. Due to the strong light confinement of the AlGaAsOI nanowaveguide, high-order phase match is enabled by dispersion engineering to achieve a large synergetic conversion bandwidth with high conversion efficiency. Simulation results show a possible conversion bandwidth over an octave. An AlGaAsOI nanowaveguide with 3-mm length and a nominal cross-section dimension of $ 320\;{\rm nm} \times 680\;{\rm nm} $320nm×680nm is used for the wavelength conversion of a 10 Gbit/s non-return-to-zero on-off keying signal and a 10 Gbit/s Nyquist-shaped four-level pulse-amplitude modulation signal. A conversion efficiency of $ - {28}\;{\rm dB}$-28dB is achieved using a 17.5-dBm continuous-wave pump in the C band, with 744 nm conversion from 1999.65 to 1255.35 nm.

High-confinement gallium nitride-on-sapphire waveguides for integrated nonlinear photonics.

We demonstrate a highly effective nonlinearity of 7.3 W-1 m-1 in a high-confinement gallium nitride-on-sapphire waveguide by performing four-wave mixing characterization at telecom wavelengths. Benefitting from a high-index-contrast waveguide layout, we can engineer the device dispersion efficiently and achieve broadband four-wave mixing operation over more than 100 nm. The intrinsic material nonlinearity of gallium nitride is extracted. Furthermore, we fabricate microring resonators with quality factors above 100,000, which will be promising for various nonlinear applications.

Signal reshaping and noise suppression using photonic crystal Fano structures.

We experimentally demonstrate the use of photonic crystal Fano resonances for reshaping optical data signals. We show that the combination of an asymmetric Fano resonance and carrier-induced nonlinear effects in a nanocavity can be used to realize a nonlinear power transfer function, which is a key functionality for optical signal regeneration, particularly for suppression of amplitude fluctuations of data signals. The experimental results are explained using simulations based on coupled-mode theory and also compared to the case of using conventional Lorentzian-shaped resonances. Using indium phosphide photonic crystal membrane structures, we demonstrate reshaping of 2 Gbit/s and 10 Gbit/s return-to-zero on-off keying (RZ-OOK) data signals at telecom wavelengths around 1550 nm. Eye diagrams of the reshaped signals show that amplitude noise fluctuations can be significantly suppressed. The reshaped signals are quantitatively analyzed using bit-error ratio (BER) measurements, which show up to 2 dB receiver sensitivity improvement at a BER of 10-9 compared to a degraded input noisy signal. Due to efficient light-matter interaction in the high-quality factor and small mode-volume photonic crystal nanocavity, low energy consumption, down to 104 fJ/bit and 41 fJ/bit for 2 Gbit/s and 10 Gbit/s, respectively, has been achieved. Device perspectives and limitations are discussed.

Orbital angular momentum modes emission from a silicon photonic integrated device for km-scale data-carrying fiber transmission.

We experimentally demonstrate orbital angular momentum (OAM) modes emission from a high emission efficiency OAM emitter for 20-Gbit/s quadrature phase-shift keying (QPSK) carrying data transmission in few-mode fiber (FMF). The device is capable of emitting vector optical vortices carrying well-defined OAM efficiently with the efficiency of the device >37%. Seven modes propagate through a 2-km two-mode and a 3.6-km three-mode FMF with measured optical signal-to-noise ratio (OSNR) penalties less than 4 dB at a bit-error rate (BER) of 2 × 10-3. The demonstrations with favorable performance pave the way to incorporate silicon photonic integrated devices as transceivers in an OAM-enabled optical fiber communication link.

Pulse carving using nanocavity-enhanced nonlinear effects in photonic crystal Fano structures.

We experimentally demonstrate the use of a photonic crystal Fano resonance for carving-out short pulses from long-duration input pulses. This is achieved by exploiting an asymmetric Fano resonance combined with carrier-induced nonlinear effects in a photonic crystal membrane structure. The use of a nanocavity concentrates the input field to a very small volume leading to an efficient nonlinear resonance shift that carves a short pulse out of the input pulse. Here, we demonstrate shortening of ∼500 ps and ∼100 ps long pulses to ∼30 ps and ∼20 ps pulses, respectively. Furthermore, we demonstrate error-free low duty cycle return-to-zero signal generation at 2 Gbit/s with energy consumption down to ∼1 pJ/bit and power penalty of ∼2 dB. The device physics and limitations are analyzed using nonlinear coupled-mode theory.

Compact high-efficiency vortex beam emitter based on a silicon photonics micro-ring.

Photonic integrated devices that emit vortex beam carrying orbital angular momentum are becoming key components for multiple applications. Here we propose and demonstrate a high-efficiency vortex beam emitter based on a silicon micro-ring resonator integrated with a metal mirror. Such a compact emitter is capable of generating vortex beams with a high efficiency and small divergence angle. Vector vortex beams of various topological charges are selectively generated by the emitter at different wavelengths with an emission efficiency of up to 37%.

Hybrid III-V/SOI resonant cavity enhanced photodetector.

A hybrid III-V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated as part of the HG reflector, enabling a very compact vertical cavity. Numerical investigations show that a quantum efficiency close to 100 % and a detection linewidth of about 1 nm can be achieved, which are desirable for wavelength division multiplexing applications. Based on these results, a hybrid RCE-PD sample has been fabricated by heterogeneously integrating an InP-based material onto a silicon-on-insulator wafer and has been characterized, which shows a clear enhancement in photo-current at the designed wavelength. This indicates that the HG reflector provides a field enhancement sufficient for RCE-PD operation. In addition, a capability of feasibly selecting the detection wavelength during fabrication as well as a possibility of realizing silicon-integrated bidirectional transceivers are discussed.

Low-loss high-confinement waveguides and microring resonators in AlGaAs-on-insulator.

AlGaAs is a promising material for integrated nonlinear photonics due to its intrinsic high nonlinearity. However, the challenging fabrication of deep etched AlGaAs devices makes it difficult to realize high-performance devices such as low-loss dispersion engineered waveguides and high-quality microring resonators. Here, we report a process to make high-quality AlGaAs-on-insulator (AlGaAsOI) wafers where high confinement waveguides can be realized. Using optimized patterning processes, we fabricated AlGaAsOI waveguides with propagation losses as low as 1 dB/cm and microring resonators with quality factors up to 350,000 at telecom wavelengths. Our demonstration opens new prospects for AlGaAs devices in integrated nonlinear photonics.

Threshold Characteristics of Slow-Light Photonic Crystal Lasers.

The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a minimum value for a specific cavity length. The experimental results are explained by an analytical theory for the laser threshold that takes into account the effects of slow light and random disorder due to unavoidable fabrication imperfections. Longer lasers are found to operate deeper into the slow-light region, leading to a trade-off between slow-light induced reduction of the mirror loss and slow-light enhancement of disorder-induced losses.