Strong enhancement of magnetic ordering temperature and structural/valence transitions in EuPd3S4 under high pressure.

We present a comprehensive study of the inhomogeneous mixed-valence compound, EuPd3S4, by electrical transport, X-ray diffraction, time-domain 151Eu synchrotron Mössbauer spectroscopy, and X-ray absorption spectroscopy measurements under high pressure. Electrical transport measurements show that the antiferromagnetic ordering temperature, TN, increases rapidly from 2.8 K at ambient pressure to 23.5 K at ~19 GPa and plateaus between ~19 and ~29 GPa after which no anomaly associated with TN is detected. A pressure-induced first-order structural transition from cubic to tetragonal is observed, with a rather broad coexistence region (~20 GPa to ~30 GPa) that corresponds to the TN plateau. Mössbauer spectroscopy measurements show a clear valence transition from approximately 50:50 Eu2+:Eu3+ to fully Eu3+ at ~28 GPa, consistent with the vanishing of the magnetic order at the same pressure. X-ray absorption data show a transition to a fully trivalent state at a similar pressure. Our results show that pressure first greatly enhances TN, most likely via enhanced hybridization between the Eu 4f states and the conduction band, and then, second, causes a structural phase transition that coincides with the conversion of the europium to a fully trivalent state.

Large phonon thermal Hall conductivity in the antiferromagnetic insulator Cu3TeO6.

Phonons are known to generate a thermal Hall effect in certain insulators, including oxides with rare-earth impurities, quantum paraelectrics, multiferroic materials, and cuprate Mott insulators. In each case, a special feature of the material is presumed relevant for the underlying mechanism that confers chirality to phonons in a magnetic field. A fundamental question is whether a phonon Hall effect is an unusual occurrence-linked to special characteristics such as skew scattering off rare-earth impurities, structural domains, ferroelectricity, or ferromagnetism-or a much more common property of insulators than hitherto believed. To help answer this question, we have turned to a material with none of the previously encountered special features: the cubic antiferromagnet Cu3TeO6. We find that its thermal Hall conductivity [Formula: see text] is among the largest of any insulator so far. We show that this record-high [Formula: see text] signal is due to phonons, and it does not require the presence of magnetic order, as it persists above the ordering temperature. We conclude that the phonon Hall effect is likely to be a fairly common property of solids.

Toward Fully Multiferroic van der Waals SpinFETs: Basic Design and Quantum Calculations.

Manipulating spin transport enhances the functionality of electronic devices, allowing them to surpass physical constraints related to speed and power. For this reason, the use of van der Waals multiferroics at the interface of heterostructures offers promising prospects for developing high-performance devices, enabling the electrical control of spin information. Our work focuses primarily on a mechanism for multiferroicity in two-dimensional van der Waals materials that stems from an interplay between antiferromagnetism and the breaking of inversion symmetry in certain bilayers. We provide evidence for spin-electrical couplings that include manipulating van der Waals multiferroic edges via external voltages and the subsequent control of spin transport including for fully multiferroic spin field-effect transistors.

Unveiling the Anomalous Hall Response of the Magnetic Structure Changes in the Epitaxial MnBi2Te4 Films.

Recently discovered as an intrinsic antiferromagnetic topological insulator, MnBi2Te4 has attracted tremendous research interest, as it provides an ideal platform to explore the interplay between topological and magnetic orders. MnBi2Te4 displays distinct exotic topological phases that are inextricably linked to the different magnetic structures of the material. In this study, we conducted electrical transport measurements and systematically investigated the anomalous Hall response of epitaxial MnBi2Te4 films when subjected to an external magnetic field sweep, revealing the different magnetic structures stemming from the interplay of applied fields and the material's intrinsic antiferromagnetic (AFM) ordering. Our results demonstrate that the nonsquare anomalous Hall loop is a consequence of the distinct reversal processes within individual septuple layers. These findings shed light on the intricate magnetic structures in MnBi2Te4 and related materials, offering insights into understanding their transport properties and facilitating the implementation of AFM topological electronics.

Multiple Valley Modulations in Noncollinear Antiferromagnets.

Two-dimensional valleys and magnetism are rising areas with intriguing properties and practical uses in advanced information technology. By coupling valleys to collinear magnetism, valley degeneracy is lifted in a large number of magnetic valley materials to exploit the valley degree of freedom. Beyond collinear magnetism, new coupling modes between valley and magnetism are few but highly desirable. By tight-binding calculations of a breathing Kagome lattice, we demonstrate a tunable valley structure and valley-contrasting physical properties in noncollinear antiferromagnets. Distinct from collinear magnetism, noncollinear antiferromagnetic order enables valley splittings even without spin-orbit coupling. Both the canting and azimuthal angles of magnetic moments can be used as experimentally accessible knobs to tune valley splittings. Our first-principles calculations of the Fe3C6O6-silicene-Fe3C6O6 heterostructure also exhibit tunable valley splittings in noncollinear antiferromagnetism, agreeing with our tight-binding results. Our work paves avenues for designing novel magnetic valley materials and energy-efficient valleytronic devices based on noncollinear magnetism.

Ultrahigh Néel Temperature Antiferromagnetism and Ultrafast Laser-Controlled Demagnetization in a Dirac Nodal Line MoB3 Monolayer.

Two-dimensional (2D) antiferromagnetic (AFM) materials boasting a high Néel temperature (TN), high carrier mobility, and fast spin response under an external field are in great demand for efficient spintronics. Herein, we theoretically present the MoB3 monolayer as an ideal 2D platform for AFM spintronics. The AFM MoB3 monolayer features a symmetry-protected, 4-fold degenerate Dirac nodal line (DNL) at the Fermi level. It demonstrates a high magnetic anisotropy energy of 865 µeV/Mo and an ultrahigh TN of 1050 K, one of the highest recorded for 2D AFMs. Importantly, we reveal the ultrafast demagnetization of AFM MoB3 under laser irradiation, which induces a rapid transition from a DNL semimetallic state to a metallic state on the time scale of hundreds of femtoseconds. This work presents an effective method for designing advanced spintronics using 2D high-temperature DNL semimetals and opens up a new idea for ultrafast modulation of magnetization in topological semimetals.

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices.

Magnetic topological materials with coexisting magnetism and nontrivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi2Te4 show fascinating even-odd layer-dependent physics. In this work, we fabricate a series of thin-flake MnBi2Te4 devices using stencil masks and observe the Chern insulator state at high magnetic fields. Upon magnetic field training, a large exchange bias effect is observed in odd but not in even septuple layer (SL) devices. Through theoretical calculations, we attribute the even-odd layer-dependent exchange bias effect to the contrasting surface and bulk magnetic properties of MnBi2Te4 devices. Our findings reveal the microscopic magnetic configuration of MnBi2Te4 thin flakes and highlight the challenges in replicating the zero magnetic field quantum anomalous Hall effect in odd SL MnBi2Te4 devices.

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films.

The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two nonsuperconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi2Te4 and an antiferromagnetic iron chalcogenide FeTe. Our electrical transport measurements reveal interface-induced superconductivity in these heterostructures. By performing scanning tunneling microscopy and spectroscopy measurements, we observe a proximity-induced superconducting gap on the top surface of the MnBi2Te4 layer, confirming the coexistence of superconductivity and antiferromagnetism in the MnBi2Te4 layer. Our findings will advance the fundamental inquiries into the topological superconducting phase in hybrid devices and provide a promising platform for the exploration of chiral Majorana physics in MnBi2Te4-based heterostructures.

A Delicate Balance Between Spin-Wave Mediated Weak Localization and Electron-Phonon Scattering in the Design of Zero Temperature Coefficient of Resistivity.

Zero thermal coefficients of resistivity (ZTCR) materials exhibit minimal changes in resistance with temperature variations, making them essential in modern advanced technologies. The current ZTCR materials, which are based on the resistivity saturation effect of heavy metals, tend to function at elevated temperatures because the mean free path approaches the lower limit of the semiclassical Boltzmann theory when the temperature is sufficiently high. ZTCR materials working at low-temperatures are difficult to achieve due to electron-phonon scattering, which results in increased resistivity according to Bloch's theory. In this work, the ZTCR behavior at low-temperatures is realized in pre-microstrained Mn3NiN. The delicate balance between the resistivity contribution from electron-phonon scattering and spin-wave mediated weak localization is well revealed. A remarkable temperature coefficient of resistivity (TCR) value as low as 1.9 ppm K-1 (50 K ≤ T ≤ 200 K) is obtained, which is significantly superior to the threshold value of ZTCR behavior and the application standard of commercial ZTCR materials. The demonstration provides a unique paradigm in the design of ZTCR materials through the contraction effects of two opposite conductance mechanisms with positive and negative thermal coefficients of resistivity.

2D Co-Directed Metal-Organic Networks Featuring Strong Antiferromagnetism and Perpendicular Anisotropy.

Antiferromagnetic spintronics is a rapidly emerging field with the potential to revolutionize the way information is stored and processed. One of the key challenges in this field is the development of novel 2D antiferromagnetic materials. In this paper, the first on-surface synthesis of a Co-directed metal-organic network is reported in which the Co atoms are strongly antiferromagnetically coupled, while featuring a perpendicular magnetic anisotropy. This material is a promising candidate for future antiferromagnetic spintronic devices, as it combines the advantages of 2D and metal-organic chemistry with strong antiferromagnetic order and perpendicular magnetic anisotropy.

Prediction of unconventional magnetism in doped FeSb2.

It is commonly believed that the energy bands of typical collinear antiferromagnets (AFs), which have zero net magnetization, are Kramers spin-degenerate. Kramers nondegeneracy is usually associated with a global time-reversal symmetry breaking (e.g., via ferromagnetism) or with a combination of spin-orbit interaction and broken spatial inversion symmetry. Recently, another type of spin splitting was demonstrated to emerge in some collinear magnets that are fully spin compensated by symmetry, nonrelativistic, and not even necessarily noncentrosymmetric. These materials feature nonzero spin density staggered in real space as seen in traditional AFs but also spin splitting in momentum space, generally seen only in ferromagnets. This results in a combination of materials characteristics typical of both ferromagnets and AFs. Here, we discuss this recently discovered class with application to a well-known semiconductor, FeSb2, and predict that with certain alloying, it becomes magnetic and metallic and features the aforementioned magnetic dualism. The calculated energy bands split antisymmetrically with respect to spin-degenerate nodal surfaces rather than nodal points, as in the case of spin-orbit splitting. The combination of a large (0.2-eV) spin splitting, compensated net magnetization with metallic ground state, and a specific magnetic easy axis generates a large anomalous Hall conductivity (∼150 S/cm) and a sizable magnetooptical Kerr effect, all deemed to be hallmarks of nonzero net magnetization. We identify a large contribution to the anomalous response originating from the spin-orbit interaction gapped anti-Kramers nodal surfaces, a mechanism distinct from the nodal lines and Weyl points in ferromagnets.

Magnetoelastic standing waves induced in UO2 by microsecond magnetic field pulses.

Magnetoelastic dilatometry of the piezomagnetic antiferromagnet UO2 was performed via the fiber Bragg grating method in magnetic fields up to 150 T generated by a single-turn coil setup. We show that in microsecond timescales, pulsed-magnetic fields excite mechanical resonances at temperatures ranging from 10 to 300 K, in the paramagnetic as well as within the robust antiferromagnetic state of the material. These resonances, which are barely attenuated within the 100-µs observation window, are attributed to the strong magnetoelastic coupling in UO2 combined with the high crystalline quality of the single crystal samples. They compare well with mechanical resonances obtained by a resonant ultrasound technique and superimpose on the known nonmonotonic magnetostriction background. A clear phase shift of π in the lattice oscillations is observed in the antiferromagnetic state when the magnetic field overcomes the piezomagnetic switch field H[Formula: see text] T. We present a theoretical argument that explains this unexpected behavior as a result of the reversal of the antiferromagnetic order parameter at Hc.

Dirac Half-Semimetallicity and Antiferromagnetism in Graphene Nanoribbon/Hexagonal Boron Nitride Heterojunctions.

Half-metals have been envisioned as active components in spintronic devices by virtue of their completely spin-polarized electrical currents. Actual materials hosting half-metallic phases, however, remain scarce. Here, we predict that recently fabricated heterojunctions of zigzag nanoribbons embedded in two-dimensional hexagonal boron nitride are half-semimetallic, featuring fully spin-polarized Dirac points at the Fermi level. The half-semimetallicity originates from the transfer of charges from hexagonal boron nitride to the embedded graphene nanoribbon. These charges give rise to opposite energy shifts of the states residing at the two edges, while preserving their intrinsic antiferromagnetic exchange coupling. Upon doping, an antiferromagnetic-to-ferrimagnetic phase transition occurs in these heterojunctions, with the sign of the excess charge controlling the spatial localization of the net magnetic moments. Our findings demonstrate that such heterojunctions realize tunable one-dimensional conducting channels of spin-polarized Dirac fermions seamlessly integrated into a two-dimensional insulator, thus holding promise for the development of carbon-based spintronics.

Widely Varying Kondo and Magnetic Interactions in Molecule Gold Nanostructured Materials by Changing the Gold Nanoarchitecture.

Delocalized-localized electron interactions are central to strongly correlated electron phenomena. Here, we study the Kondo effect, a prototypical strongly correlated phenomena, in a tunable fashion using gold nanostructures (nanoparticle, NP, and nanoshell, NS) + molecule cross-linkers (butanedithiol, BDT). NP films exhibit hallmark signatures of the Kondo effect, including (1) a log temperature resistance upturn as temperature decreases in a metallic regime, and (2) zero-bias conductance peaks (ZBCPs) that are well fit by a Frota function near a percolation insulator transition, previously used to model Kondo peaks observed using tunnel junctions. Remarkably, NP + NS films exhibit ZBCPs that persist to >220 K, i.e., >10-fold higher than that in NP films. Magnetic measurements reveal that moments in NP powders align, and in NS powders, they antialign at low temperatures. Based on these observations, we propose a mechanism in which varying such material nanobuilding blocks can modify electron-electron interactions to such a large degree.

Ultrafast Laser Pulse Induced Transient Ferrimagnetic State and Spin Relaxation Dynamics in Two-Dimensional Antiferromagnets.

We employ real-time time-dependent density functional theory (rt-TDDFT) and ab initio nonadiabatic molecular dynamics (NAMD) to systematically investigate the ultrafast laser pulses induced spin transfer and relaxation dynamics of two-dimensional (2D) antiferromagnetic-ferromagnetic (AFM/FM) MnPS3/MnSe2 van der Waals heterostructures. We demonstrate that laser pulses can induce a ferrimagnetic (FiM) state in the AFM MnPS3 layer within tens of femtoseconds and maintain it for subpicosecond time scale before reverting to the AFM state. We identify the mechanism in which the asymmetric optical intersite spin transfer (OISTR) effect occurring within the sublattices of the AFM and FM layers drives the interlayer spin-selective charge transfer, leading to the transition from AFM to FiM state. Furthermore, the unequal electron-phonon coupling of spin-up and spin-down channels of AFM spin sublattice causes an inequivalent spin relaxation, in turn extending the time scale of the FiM state. These findings are essential for designing novel optical-driven ultrafast 2D magnetic switches.

Interplay between Local Moment and Itinerant Magnetism in the Layered Metallic Antiferromagnet TaFe1.14Te3.

Two-dimensional antiferromagnets have garnered considerable interest for the next generation of functional spintronics. However, many bulk materials from which two-dimensional antiferromagnets are isolated are limited by their air sensitivity, low ordering temperatures, and insulating transport properties. TaFe1+yTe3 aims to address these challenges with increased air stability, metallic transport, and robust antiferromagnetism. Here, we synthesize TaFe1+yTe3 (y = 0.14), identify its structural, magnetic, and electronic properties, and elucidate the relationships between them. Axial-dependent high-field magnetization measurements on TaFe1.14Te3 reveal saturation magnetic fields ranging between 27 and 30 T with saturation magnetic moments of 2.05-2.12 µB. Magnetotransport measurements confirm that TaFe1.14Te3 is metallic with strong coupling between magnetic order and electronic transport. Angle-resolved photoemission spectroscopy measurements across the magnetic transition uncover a complex interplay between itinerant electrons and local magnetic moments that drives the magnetic transition. We demonstrate the ability to isolate few-layer sheets of TaFe1.14Te3, establishing TaFe1.14Te3 as a potential platform for two-dimensional spintronics.

Single-Step Synthesis of An Ideal Chain Antiferromagnet [H2(4,4'-bipyridyl)](H3O)2Fe2F10 with Spin S = 5/2.

One-dimensional (1D) magnets are of great interest owing to their intriguing quantum phenomena and potential application in quantum computing. We successfully synthesized an ideal antiferromagnetic spin S = 5/2 chain compound [H2(4,4'-bpy)](H3O)2Fe2F10 (4,4'-bpy = 4,4'-bipyridyl) 1, using a single-step low-temperature hydrothermal method under conditions that favors the protonation of the bulky bidentate ligand 4,4'-bpy. Compound 1 consists of well-separated (Fe3+-F-)¥ chains with a large Fe-F-Fe angle of 174.8°. Both magnetic susceptibility and specific heat measurements show that 1 does not undergo a magnetic long-range ordering down to 0.5 K, despite the strong Fe-F-Fe intrachain spin exchange J with J/kB = -16.2(1) K. This indicates a negligibly weak interchain spin exchange J'. The J'/J value estimated for 1 is extremely small (< 2.8×10-6), smaller than those reported for all other S = 5/2 chain magnets. Our hydrothermal synthesis incorporates both [H2(4,4'-bpy)]2+ and (H3O)+ cations into the crystal lattice with numerous hydrogen bonds, hence effectively separating the (Fe3+-F-)¥ spin chains. This single-step hydrothermal synthesis under conditions favoring the protonation of bulky bidentate ligands offers an effective synthetic strategy to prepare well-separated 1D spin chain systems of magnetic ions with various spin values.

Deterministic Magnetization Reversal in Synthetic Antiferromagnets using Natural Light.

Traditional current-driven spintronics is limited by localized heating issues and large energy consumption, restricting their data storage density and operation speed. Meanwhile, voltage-driven spintronics with much lower energy dissipation also suffers from charge-induced interfacial corrosion. Thereby finding a novel way of tuning ferromagnetism is crucial for spintronics with energy-saving and good reliability. Here, a visible light tuning of interfacial exchange interaction via photoelectron doping into synthetic antiferromagnetic heterostructure of CoFeB/Cu/CoFeB/PN Si substrate is demonstrated. Then, a complete, reversible magnetism switching between antiferromagnetic (AFM) and ferromagnetic (FM) states with visible light on and off is realized. Moreover, a visible light control of 180° deterministic magnetization switching with a tiny magnetic bias field is achieved. The magnetic optical Kerr effect results further reveal the magnetic domain switching pathway between AFM and FM domains. The first-principle calculations conclude that the photoelectrons fill in the unoccupied band and raise the Fermi energy, which increases the exchange interaction. Lastly, a prototype device with visible light control of two states switching with a 0.35% giant magnetoresistance ratio change (maximal 0.4%), paving the way toward fast, compact, and energy-efficient solar-driven memories is fabricated.

Observation of Giant Surface Second-Harmonic Generation Coupled to Nematic Orders in the van der Waals Antiferromagnet FePS3.

Second-harmonic generation has been applied to study lattice, electronic, and magnetic proprieties in atomically thin materials. However, inversion symmetry breaking is usually required for the materials to generate a large signal. In this work, we report a giant second-harmonic generation that arises below the Néel temperature in few-layer centrosymmetric FePS3. A layer-dependent study indicates the detected signal is from the second-order nonlinearity of the surface. The magnetism-induced surface second-harmonic response is 2 orders of magnitude larger than those reported in other magnetic systems, with the surface nonlinear susceptibility reaching 0.08-0.13 nm2/V in 2-5 L samples. By combing linear dichroism and second-harmonic generation experiments, we further confirm the giant second-harmonic generation is coupled to nematic orders formed by the three possible Zigzag antiferromagnetic domains. Our study shows that the surface second-harmonic generation is also a sensitive tool to study antiferromagnetic states in centrosymmetric atomically thin materials.

Delicate Ferromagnetism in MnBi6Te10.

Tailoring magnetic orders in topological insulators is critical to the realization of topological quantum phenomena. An outstanding challenge is to find a material where atomic defects lead to tunable magnetic orders while maintaining a nontrivial topology. Here, by combining magnetization measurements, angle-resolved photoemission spectroscopy, and transmission electron microscopy, we reveal disorder-enabled, tunable magnetic ground states in MnBi6Te10. In the ferromagnetic phase, an energy gap of 15 meV is resolved at the Dirac point on the MnBi2Te4 termination. In contrast, antiferromagnetic MnBi6Te10 exhibits gapless topological surface states on all terminations. Transmission electron microscopy and magnetization measurements reveal substantial Mn vacancies and Mn migration in ferromagnetic MnBi6Te10. We provide a conceptual framework where a cooperative interplay of these defects drives a delicate change of overall magnetic ground state energies and leads to tunable magnetic topological orders. Our work provides a clear pathway for nanoscale defect-engineering toward the realization of topological quantum phases.