Multidimensional Deep Ultraviolet (DUV) Synapses Based on Organic/Perovskite Semiconductor Heterojunction Transistors for Antispoofing Facial Recognition Systems.

Reliably discerning real human faces from fake ones, known as antispoofing, is crucial for facial recognition systems. While neuromorphic systems offer integrated sensing-memory-processing functions, they still struggle with efficient antispoofing techniques. Here we introduce a neuromorphic facial recognition system incorporating multidimensional deep ultraviolet (DUV) optoelectronic synapses to address these challenges. To overcome the complexity and high cost of producing DUV synapses using traditional wide-bandgap semiconductors, we developed a low-temperature (≤70 °C) solution process for fabricating DUV synapses based on PEA2PbBr4/C8-BTBT heterojunction field-effect transistors. This method enables the large-scale (4-in.), uniform, and transparent production of DUV synapses. These devices respond to both DUV and visible light, showing multidimensional features. Leveraging the unique ability of the multidimensional DUV synapse (MDUVS) to discriminate real human skin from artificial materials, we have achieved robust neuromorphic facial recognition with antispoofing capability, successfully identifying genuine human faces with an accuracy exceeding 92%.

High-Efficiency, 80 mm Aperture Metalens Telescope.

Metalenses promise potential for a paradigm shift of conventional optical devices. However, the aperture sizes of metalenses are usually bound within hundreds of micrometers by the commonly used fabrication methods, limiting their usage on practical optical devices like telescopes. Here, for the first time, we demonstrate a high-efficiency, single-lens, refractive metalens telescope. We developed a mass production-friendly workflow for fabricating wafer-scale (80 mm aperture) metalenses using deep-ultraviolet (DUV) photolithography. Our metalens works in the near-infrared region with nearly diffraction-limited focal spot sizes and a high peak focusing efficiency of 80.84% at 1450 nm experimentally. Based on the metalens, we built a single-lens telescope and acquired images of the lunar surface, revealing its geographical structures. We believe our demonstration of the metalens telescope proves the exciting potential lying in the metasurfaces and could bring new possibilities for areas involving large optical systems, including geosciences, planetary observation, and astrophysical science.

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED.

The advantages of van der Waals epitaxial nitrides have become a research hot topic. It is worth noting that graphene plays an important role in the research of epitaxial AlN epitaxial layer. In this work, we demonstrate a method to obtain high-quality and low-dislocation AlN epitaxial layer by combining graphene and sputtered AlN as the nucleation layer on the C-sapphire substrate via metal organic chemical vapor deposition, and successfully fabricated a 277 nm AlGaN-based deep ultraviolet light emitting diode (DUV-LED) based on the obtained AlN epitaxial layer. The presence of graphene promotes the stress release of AlN. Compared with the AlN epitaxial layer directly grown on graphene/sapphire substrate, the exist of sputtered AlN/graphene nucleation layer facilitates most of the threading dislocations in AlN can annihilate each other in the range of about 100 nm. Thus, as grown AlN epitaxial layer shows the decreasing of the screw dislocation from 2.31 × 109to 2.08 × 108cm-2significantly. We manufacture an DUV-LED with 277 nm emission wavelength by using high-quality AlN films, which shows that magnitude of the leakage current is only on the order of nanoamperes and the forward turn on voltage is 3.5 V at room temperature. This study provides a meaningful strategy to achieve high-quality AlN film and high-performance DUV-LED.

Non-Ultrawide Bandgap Semiconductor GaSe Nanobelts for Sensitive Deep Ultraviolet Light Photodetector Application.

In this paper, the authors report the fabrication of a sensitive deep ultraviolet (DUV) photodetector by using an individual GaSe nanobelt with a thickness of 52.1 nm, which presents the highest photoresponse at 265 nm illumination with a responsivity and photoconductive gain of about 663 A W-1 and 3103 at a 3 V bias, respectively, comparable to or even better than other reported devices based on conventional wide bandgap semiconductors. According to the simulation, this photoelectric property is associated with the wavelength-dependent absorption coefficient of the GaSe crystal, for which incident light with shorter wavelengths will be absorbed near the surface, while light with longer wavelengths will have a larger penetration depth, leading to a blueshift of the absorption edge with decreasing thickness. Further finite element method (FEM) simulation reveals that the relatively thin GaSe nanobelt exhibits an enhanced transversal standing wave pattern compared to its thicker counterpart at a wavelength of 265 nm, leading to an enhanced light-matter interaction and thereby more efficient photocurrent generation. The device can also function as an effective image sensor with acceptable spatial resolution. This work will shed light on the facile fabrication of a high-performance DUV photodetector from non-ultrawide bandgap semiconductors.

Rapid inactivation of Dabie bandavirus (SFTSV) by irradiation with deep-ultraviolet light-emitting diode.

Severe fever with thrombocytopenia syndrome (SFTS) caused by Dabie bandavirus (SFTSV) is a serious public health concern in endemic areas, particularly in Asian and Southeast Asian countries. SFTSV is transmitted by direct contact with body fluids from infected humans and animals. Therefore, environmental hygiene in hospitals and veterinary clinics in SFTSV-endemic areas is highly important. This study assessed the effects of continuous and intermittent irradiation with deep-ultraviolet light-emitting diode (DUV-LED) on SFTSV. Evaluation was performed by conducting plaque assay in which SFTSV irradiated with deep-ultraviolet (DUV; 280 ± 5 nm) was inoculated onto Vero cells. The results showed that continuous and intermittent irradiation for 5 s, resulting in 18.75 mJ/cm2 of cumulative UV exposure, led to a >2.7 and >2.9 log reduction, respectively, corresponding to a >99.8% reduction in infectivity. These results demonstrate that DUV can be utilized for inactivation of SFTSV to maintain environmental hygiene in hospitals and veterinary clinics in endemic countries.

Possibilities of Real Time Monitoring of Micropollutants in Wastewater Using Laser-Induced Raman & Fluorescence Spectroscopy (LIRFS) and Artificial Intelligence (AI).

The entire water cycle is contaminated with largely undetected micropollutants, thus jeopardizing wastewater treatment. Currently, monitoring methods that are used by wastewater treatment plants (WWTP) are not able to detect these micropollutants, causing negative effects on aquatic ecosystems and human health. In our case study, we took collective samples around different treatment stages (aeration tank, membrane bioreactor, ozonation) of a WWTP and analyzed them via Deep-UV laser-induced Raman and fluorescence spectroscopy (LIRFS) in combination with a CNN-based AI support. This process allowed us to perform the spectra recognition of selected micropollutants and thus analyze their reliability. The results indicated that the combination of sensitive fluorescence measurements with very specific Raman measurements, supplemented with an artificial intelligence, lead to a high information gain for utilizing it as a monitoring purpose. Laser-induced Raman spectroscopy reaches detections limits of alert pharmaceuticals (carbamazepine, naproxen, tryptophan) in the range of a few µg/L; naproxen is detectable down to 1 × 10-4 mg/g. Furthermore, the monitoring of nitrate after biological treatment using Raman measurements and AI support showed a reliable assignment rate of over 95%. Applying the fluorescence technique seems to be a promising method in observing DOC changes in wastewater, leading to a correlation coefficient of R2 = 0.74 for all samples throughout the purification processes. The results also showed the influence of different extraction points in a cleaning stage; therefore, it would not be sensible to investigate them separately. Nevertheless, the interpretation suffers when many substances interact with one another and influence their optical behavior. In conclusion, the results that are presented in our paper elucidate the use of LIRFS in combination with AI support for online monitoring.

Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer.

The electron blocking layer (EBL) plays a vital role in blocking the electron overflow from an active region in the AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED). Besides the blocking of electron overflow, EBL reduces hole injection toward the active region. In this work, we proposed a DUV nanowire (NW) LED structure without EBL by replacing it with a compositionally continuous graded hole source layer (HSL). Our proposed graded HSL without EBL provides a better electron blocking effect and enhanced hole injection efficiency. As a result, optical power is improved by 48% and series resistance is reduced by 50% with 4.8 V threshold voltage. Moreover, graded HSL without EBL offer reduced electric field within the active region, which leads to a significant increment in radiative recombination rate and enhancement of spontaneous emission by 34% at 254 nm wavelength, as a result, 52% maximum internal quantum efficiency with 24% efficiency drop is reported.

Application of Laser-Induced, Deep UV Raman Spectroscopy and Artificial Intelligence in Real-Time Environmental Monitoring-Solutions and First Results.

Environmental monitoring of aquatic systems is the key requirement for sustainable environmental protection and future drinking water supply. The quality of water resources depends on the effectiveness of water treatment plants to reduce chemical pollutants, such as nitrates, pharmaceuticals, or microplastics. Changes in water quality can vary rapidly and must be monitored in real-time, enabling immediate action. In this study, we test the feasibility of a deep UV Raman spectrometer for the detection of nitrate/nitrite, selected pharmaceuticals and the most widespread microplastic polymers. Software utilizing artificial intelligence, such as a convolutional neural network, is trained for recognizing typical spectral patterns of individual pollutants, once processed by mathematical filters and machine learning algorithms. The results of an initial experimental study show that nitrates and nitrites can be detected and quantified. The detection of nitrates poses some challenges due to the noise-to-signal ratio and background and related noise due to water or other materials. Selected pharmaceutical substances could be detected via Raman spectroscopy, but not at concentrations in the µg/l or ng/l range. Microplastic particles are non-soluble substances and can be detected and identified, but the measurements suffer from the heterogeneous distribution of the microparticles in flow experiments.

M(NH2 SO3 )2 (M=Sr, Ba): Two Deep-Ultraviolet Transparent Sulfamates Exhibiting Strong Second Harmonic Generation Responses and Moderate Birefringence.

Over the last few decades, the development of each new nonlinear optical (NLO)-active functional unit has led to the discoveries of a series of excellent NLO materials. In the present work, based on first-principles studies, we identified a novel deep-UV (DUV) NLO-active functional unit, a non-π-conjugated group viz. (NH2 SO3 )- . By combining alkaline-earth metals with (NH2 SO3 )- group, two DUV transparent NLO sulfamates, M(NH2 SO3 )2 (M=Sr, Ba) with superior optical properties including strong SHG responses (1.2 and 2.7 × KH2 PO4 (KDP)), short UV cut-off edge (<190 nm) and moderate birefringence (0.056@589.3 nm for Sr(NH2 SO3 )2 ) were successfully synthesized. Our work has provided not only two promising DUV transparent NLO crystals, but also an innovative non-π-conjugated unit for developing more DUV transparent NLO materials.

All-Glass, Large Metalens at Visible Wavelength Using Deep-Ultraviolet Projection Lithography.

Metalenses, planar lenses realized by placing subwavelength nanostructures that locally impart lenslike phase shifts to the incident light, are promising as a replacement for refractive optics for their ultrathin, lightweight, and tailorable characteristics, especially for applications where payload is of significant importance. However, the requirement of fabricating up to billions of subwavelength structures for centimeter-scale metalenses can constrain size-scalability and mass-production for large lenses. In this Letter, we demonstrate a centimeter-scale, all-glass metalens capable of focusing and imaging at visible wavelength, using deep-ultraviolet (DUV) projection stepper lithography. Here, we show size-scalability and potential for mass-production by fabricating 45 metalenses of 1 cm diameter on a 4 in. fused-silica wafer. The lenses show diffraction-limited focusing behavior for any homogeneously polarized incidence at visible wavelengths. The metalens' performance is quantified by the Strehl ratio and the modulation transfer function (MTF), which are then compared with commercial refractive spherical and aspherical singlet lenses of similar size and focal length. We further explore the imaging capabilities of our metalens using a color-pixel sCMOS camera and scanning-imaging techniques, demonstrating potential applications for virtual reality (VR) devices or biological imaging techniques.

Ultrasensitive Self-Powered Solar-Blind Deep-Ultraviolet Photodetector Based on All-Solid-State Polyaniline/MgZnO Bilayer.

A high sensitivity self-powered solar-blind photodetector is successfully constructed based on the polyaniline/MgZnO bilayer. The maximum responsivity of the photodetector is 160 µA W-1 at 250 nm under 0 V bias. The device also exhibits a high on/off ratio of ≈104 under 250 nm illumination at a relatively weak light intensity of 130 µW cm-2 without any power.

Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions.

The electrical and photo-electrical properties of exfoliated MoS2 were investigated in the dark and in the presence of deep ultraviolet (DUV) light under various environmental conditions (vacuum, N2 gas, air, and O2 gas). We examined the effects of environmental gases on MoS2 flakes in the dark and after DUV illumination through Raman spectroscopy and found that DUV light induced red and blue shifts of peaks (E12 g and A1 g) position in the presence of N2 and O2 gases, respectively. In the dark, the threshold voltage in the transfer characteristics of few-layer (FL) MoS2 field-effect transistors (FETs) remained almost the same in vacuum and N2 gas but shifted toward positive gate voltages in air or O2 gas because of the adsorption of oxygen atoms/molecules on the MoS2 surface. We analyzed light detection parameters such as responsivity, detectivity, external quantum efficiency, linear dynamic range, and relaxation time to characterize the photoresponse behavior of FL-MoS2 FETs under various environmental conditions. All parameters were improved in their performances in N2 gas, but deteriorated in O2 gas environment. The photocurrent decayed with a large time constant in N2 gas, but decayed with a small time constant in O2 gas. We also investigated the characteristics of the devices after passivating by Al2O3 film on the MoS2 surface. The devices became almost hysteresis-free in the transfer characteristics and stable with improved mobility. Given its outstanding performance under DUV light, the passivated device may be potentially used for applications in MoS2-based integrated optoelectronic circuits, light sensing devices, and solar cells.

Deep UV autofluorescence microscopy for cell biology and tissue histology.

BACKGROUND INFORMATION: Autofluorescence spectroscopy is a powerful tool for molecular histology and for following metabolic processes in biological samples as it does not require labelling. However, at the microscopic scale, it is mostly limited to visible and near infrared excitation of the samples. Several interesting and naturally occurring fluorophores can be excited in the UV and deep UV (DUV), but cannot be monitored in cellulo nor in vivo due to a lack of available microscopic instruments working in this wavelength range. To fulfil this need, we have developed a synchrotron-coupled DUV microspectrofluorimeter which is operational since 2010. An extended selection of endogenous autofluorescent probes that can be excited in DUV, including their spectral characteristics, is presented. The distribution of the probes in various biological samples, including cultured cells, soft tissues, bone sections and maize stems, is shown to illustrate the possibilities offered by this system. In this work we demonstrate that DUV autofluorescence is a powerful tool for tissue histology and cell biology. RESULTS: To fulfil this need, we have developed a synchrotron-coupled DUV microspectrofluorimeter which is operational since 2010. An extended selection of endogenous autofluorescent probes that can be excited in DUV, including their spectral characteristics, is presented. The distribution of the probes in various biological samples, including cultured cells, soft tissues, bone sections and maize stems, is shown to illustrate the possibilities offered by this system. In this work we demonstrate that DUV autofluorescence is a powerful tool for tissue histology and cell biology. CONCLUSIONS: In this work we demonstrate that DUV autofluorescence is a powerful tool for tissue histology and cell biology.

All-Glass 100 mm Diameter Visible Metalens for Imaging the Cosmos.

Metasurfaces, optics made from subwavelength-scale nanostructures, have been limited to millimeter-sizes by the scaling challenge of producing vast numbers of precisely engineered elements over a large area. In this study, we demonstrate an all-glass 100 mm diameter metasurface lens (metalens) comprising 18.7 billion nanostructures that operates in the visible spectrum with a fast f-number (f/1.5, NA = 0.32) using deep-ultraviolet (DUV) projection lithography. Our work overcomes the exposure area constraints of lithography tools and demonstrates that large metasurfaces are commercially feasible. Additionally, we investigate the impact of various fabrication errors on the imaging quality of the metalens, several of which are specific to such large area metasurfaces. We demonstrate direct astronomical imaging of the Sun, the Moon, and emission nebulae at visible wavelengths and validate the robustness of such metasurfaces under extreme environmental thermal swings for space applications.

A Deep Ultraviolet Raman and Fluorescence Spectral Library of 51 Organic Compounds for the SHERLOC Instrument Onboard Mars 2020.

We report deep ultraviolet (DUV) Raman and Fluorescence spectra obtained on a SHERLOC (Scanning Habitable Environments with Raman and Luminescence for Organics and Chemicals) analog instrument for 51 pure organic compounds, including 5 carboxylic acids, 10 polycyclic aromatic hydrocarbons, 24 amino acids, 6 nucleobases, and 6 different grades of macromolecular carbon from humic acid to graphite. Organic mixtures were not investigated. We discuss how the DUV fluorescence and Raman spectra exhibited by different organic compounds allow for detection, classification, and identification of organics by SHERLOC. We find that 1- and 2-ring aromatic compounds produce detectable fluorescence within SHERLOC's spectral range (250-355 nm), but fluorescence spectra are not unique enough to enable easy identification of particular compounds. However, both aromatic and aliphatic compounds can be identified by their Raman spectra, with the number of Raman peaks and their positions being highly specific to chemical structure, within SHERLOC's reported spectral uncertainty of ±5 cm-1. For compounds that are not in the Library, classification is possible by comparing the general number and position of dominant Raman peaks with trends for different kinds of organic compounds.

Enhanced Responsivity and Optoelectronic Properties of Self-Powered Solar-Blind Ag2O/ß-Ga2O3 Heterojunction-Based Photodetector with Ag:AZO Co-Sputtered Electrode.

A Ag:AZO electrode was used as an electrode for a self-powered solar-blind ultraviolet photodetector based on a Ag2O/ß-Ga2O3 heterojunction. The Ag:AZO electrode was fabricated by co-sputtering Ag and AZO heterogeneous targets using the structural characteristics of a Facing Targets Sputtering (FTS) system with two-facing targets, and the electrical, crystallographic, structural, and optical properties of the fabricated thin film were evaluated. A photodetector was fabricated and evaluated based on the research results that the surface roughness of the electrode can reduce the light energy loss by reducing the scattering and reflectance of incident light energy and improving the trapping phenomenon between interfaces. The thickness of the electrodes was varied from 20 nm to 50 nm depending on the sputtering time. The optoelectronic properties were measured under 254 nm UV-C light, the on/off ratio of the 20 nm Ag:AZO electrode with the lowest surface roughness was 2.01 × 108, and the responsivity and detectivity were 56 mA/W and 6.99 × 1011 Jones, respectively. The Ag2O/ß-Ga2O3-based solar-blind photodetector with a newly fabricated top electrode exhibited improved response with self-powered characteristics.

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes.

The heteroepitaxy of high-quality aluminum nitride (AlN) with low stress is essential for the development of energy-efficient deep ultraviolet light-emitting diodes (DUV-LEDs). In this work, we realize that quasi-van der Waals epitaxy growth of a stress-released AlN film with low dislocation density on hexagonal boron nitride (h-BN)/sapphire suffered from high-temperature annealing (HTA) treatment and demonstrate its application in a DUV-LED. It is revealed that HTA effectively improves the crystalline quality and surface morphology of monolayer h-BN. Guided by first-principles calculations, we demonstrate that h-BN can enhance lateral migration of Al atoms due to the ability to lower the surface migration barrier (less than 0.14 eV), resulting in the rapid coalescence of the AlN film. The HTA h-BN is also proved to be efficient in reducing the dislocation density and releasing the large strain in the AlN epilayer. Based on the low-stress and high-quality AlN film on HTA h-BN, the as-fabricated 290 nm DUV-LED exhibits 80% luminescence enhancement compared to that without h-BN, as well as good reliability with a negligible wavelength shift under high current. These findings broaden the applications of h-BN in favor of III-nitride and provide an opportunity for further developing DUV optoelectronic devices on large mismatched heterogeneous substrates.

Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing.

In this paper, the X-ray diffraction full width at half the maximum (XRD FWHM) of a 3.5 µm-thick hydride vapor phase epitaxy-aluminum nitride (HVPE-AlN) (002) face after high-temperature annealing was reduced to 129 arcsec. The tensile strain in the HVPE-AlN samples gradually released with the increasing annealing temperature. When the annealing temperature exceeded 1700 °C, an aluminum oxynitride (AlON) region was generated at the contact interface between HVPE-AlN and sapphire, and the AlON structure was observed to conform to the characteristics of Al5O6N by high-resolution transmission electron microscopy (HRTEM). A 265 nm light-emitting diode (LED) based on an HVPE-AlN template annealed at 1700 °C achieved a light output power (LOP) of 4.48 mW at 50 mA, which was approximately 57% greater than that of the original sample.

Beyond the Visible: A Review of Ultraviolet Surface-Enhanced Raman Scattering Substrate Compositions, Morphologies, and Performance.

The first observation of ultraviolet surface-enhanced Raman scattering (UV-SERS) was 20 years ago, yet the field has seen a slower development pace than its visible and near-infrared counterparts. UV excitation for SERS offers many potential advantages. These advantages include increased scattering intensity, higher spatial resolution, resonance Raman enhancement from organic, biological, and semiconductor analytes, probing UV photoluminescence, and mitigating visible photoluminescence from analytes or substrates. One of the main challenges is the lack of readily accessible, effective, and reproducible UV-SERS substrates, with few commercial sources available. In this review, we evaluate the reported UV-SERS substrates in terms of their elemental composition, substrate morphology, and performance. We assess the best-performing substrates with regard to their enhancement factors and limits of detection in both the ultraviolet and deep ultraviolet regions. Even though aluminum nanostructures were the most reported and best-performing substrates, we also highlighted some unique UV-SERS composition and morphology substrate combinations. We address the challenges and potential opportunities in the field of UV-SERS, especially in relation to the development of commercially available, cost-effective substrates. Lastly, we discuss potential application areas for UV-SERS, including cost-effective detection of environmentally and militarily relevant analytes, in situ and operando experimentation, defect engineering, development of materials for extreme environments, and biosensing.

Green Removal of DUV-Polarity-Modified PMMA for Wet Transfer of CVD Graphene.

To fabricate graphene-based high-frequency electronic and optoelectronic devices, there is a high demand for scalable low-contaminated graphene with high mobility. Graphene synthesized via chemical vapor deposition (CVD) on copper foil appears promising for this purpose, but residues from the polymethyl methacrylate (PMMA) layer, used for the wet transfer of CVD graphene, drastically affect the electrical properties of graphene. Here, we demonstrate a scalable and green PMMA removal technique that yields high-mobility graphene on the most common technologically relevant silicon (Si) substrate. As the first step, the polarity of the PMMA was modified under deep-UV irradiation at λ = 254 nm, due to the formation of ketones and aldehydes of higher polarity, which simplifies hydrogen bonding in the step of its dissolution. Modification of PMMA polarity was confirmed by UV and FTIR spectrometry and contact angle measurements. Consecutive dissolution of DUV-exposed PMMA in an environmentally friendly, binary, high-polarity mixture of isopropyl alcohol/water (more commonly alcohol/water) resulted in the rapid and complete removal of DUV-exposed polymers without the degradation of graphene properties, as low-energy exposure does not form free radicals, and thus the released graphene remained intact. The high quality of graphene after PMMA removal was confirmed by SEM, AFM, Raman spectrometry, and by contact and non-contact electrical conductivity measurements. The removal of PMMA from graphene was also performed via other common methods for comparison. The charge carrier mobility in graphene films was found to be up to 6900 cm2/(V·s), demonstrating a high potential of the proposed PMMA removal method in the scalable fabrication of high-performance electronic devices based on CVD graphene.