Correlation-driven electronic nematicity in the Dirac semimetal BaNiS2.

In BaNiS2, a Dirac nodal line band structure exists within a two-dimensional Ni square lattice system, in which significant electronic correlation effects are anticipated. Using scanning tunneling microscopy (STM), we discover signs of correlated-electron behavior, namely electronic nematicity appearing as a pair of C2-symmetry striped patterns in the local density-of-states at ∼60 meV above the Fermi energy. In observations of quasiparticle interference, as well as identifying scattering between Dirac cones, we find that the striped patterns in real space stem from a lifting of degeneracy among electron pockets at the Brillouin zone boundary. We infer a momentum-dependent energy shift with d-form factor, which we model numerically within a density wave (DW) equation framework that considers spin-fluctuation-driven nematicity. This suggests an unusual mechanism driving the nematic instability, stemming from only a small perturbation to the Fermi surface, in a system with very low density of states at the Fermi energy. The Dirac points lie at nodes of the d-form factor and are almost unaffected by it. These results highlight BaNiS2 as a unique material in which Dirac electrons and symmetry-breaking electronic correlations coexist.

Symmetry-selective quasiparticle scattering and electric field tunability of the ZrSiS surface electronic structure.

Three-dimensional Dirac semimetals with square-net non-symmorphic symmetry, such as ternary ZrXY (X = Si, Ge; Y = S, Se, Te) compounds, have attracted significant attention owing to the presence of topological nodal lines, loops, or networks in their bulk. Orbital symmetry plays a profound role in such materials as the different branches of the nodal dispersion can be distinguished by their distinct orbital symmetry eigenvalues. The presence of different eigenvalues suggests that scattering between states of different orbital symmetry may be strongly suppressed. Indeed, in ZrSiS, there has been no clear experimental evidence of quasiparticle scattering reported between states of different symmetry eigenvalues at small wave vectorq⃗.Here we show, using quasiparticle interference, that atomic step-edges in the ZrSiS surface facilitate quasiparticle scattering between states of different symmetry eigenvalues. This symmetry eigenvalue mixing quasiparticle scattering is the first to be reported for ZrSiS and contrasts quasiparticle scattering with no mixing of symmetry eigenvalues, where the latter occurs with scatterers preserving the glide mirror symmetry of the crystal lattice, e.g. native point defects in ZrSiS. Finally, we show that the electronic structure of the ZrSiS surface, including its unique floating band surface state, can be tuned by a vertical electric field locally applied by the tip of a scanning tunneling microscope (STM), enabling control of a spin-orbit induced avoided crossing near the Fermi level by as much as 300%.

Moving Dirac nodes by chemical substitution.

Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step toward the realization of novel concepts of electronic devices and quantum computation. By means of Angle-Resolved Photo-Emission Spectroscopy (ARPES) experiments and ab initio simulations, here, we show that Dirac states can be effectively tuned by doping a transition metal sulfide, [Formula: see text], through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge-transfer gap of [Formula: see text] across its phase diagram, lead to the formation of Dirac lines, whose position in k-space can be displaced along the [Formula: see text] symmetry direction and their form reshaped. Not only does the doping x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making [Formula: see text] a model system to functionalize Dirac materials by varying the strength of electron correlations.

Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe2 Dirac Semimetal.

Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant with these requirements. However, challenges remain in scalable growth and substrate-dependence for on-chip integration. Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal using a low-temperature self-stitched epitaxy (SSE) approach. The low formation energy between two precursors facilitates low-temperature multiple-point nucleation (∼300 °C), growing up, and merging, resulting in self-stitching of PdTe2 domains into a continuous film, which is highly compatible with back-end-of-line (BEOL) technology. The uncooled on-chip PdTe2/Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse of up to 10.6 µm with a large specific detectivity. Furthermore, the highly integrated device array demonstrates high-resolution room-temperature imaging capability, and the device can serve as an optical data receiver for IR optical communication. This study paves the way toward low-temperature growth of 2D semimetals for uncooled MIR sensing.

Tracking Ultrafast Change of Multiterahertz Broadband Response Functions in a Photoexcited Dirac Semimetal Cd3As2 Thin Film.

The electromagnetic response of Dirac semimetals in the infrared and terahertz frequency ranges is attracting growing interest for potential applications in optoelectronics and nonlinear optics. The interplay between the free-carrier response and interband transitions in the gapless, linear dispersion relation plays a key role in enabling novel functionalities. Here we investigate ultrafast dynamics in thin films of a photoexcited Dirac semimetal Cd3As2 by probing the broadband response functions as complex quantities in the multiterahertz region (10-45 THz, 40-180 meV, or 7-30 µm), which covers the crossover between the inter- and intraband response. We resolve dynamics of the photoexcited nonthermal electrons, which merge with originally existing carriers to form a single thermalized electron gas and how it is facilitated by high-density excitation. We also demonstrate that a large reduction of the refractive index by 80% dominates the nonequilibrium infrared response, which can be utilized for designing ultrafast switches in active optoelectronics.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications.

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Prediction of negative refraction in Dirac semimetal metamaterial.

Negative refraction materials are indispensable building blocks in the optoelectric devices for their unique functionalities of controlling the light propagations, such as, superlens and transformation optics. However, material realizations of negative refraction are still limited to the conventional metals, semiconductors as well as magnetic materials. Here, we show that three dimensional Dirac semimetals have the opportunity to enable the negative refraction, which can be achieved through alternatively stacking three dimensional Dirac semimetals and the dielectric layers together. It is found that the effective perpendicular and parallel permittivities in this multilayered stack display the respective negative and positive values over a certain frequency region, which enables its negative group refractive angle and it can be controlled by the Fermi energy of Dirac semimetals. The spectra of transmittance in the multilayered structure for transverse magnetic wave also reveals an incident angle-independent transmittance dip, which originates from the zero value of the real part of the effective perpendicular permittivity. Our findings unveil the essential role of three dimensional Dirac semimetals in producing the negative group refraction responses and promise their applications in the metamaterial-based devices.

Enhanced photonic spin Hall effect in Dirac semimetal metamaterial enabled by zero effective permittivity.

With the recent discovery of three dimensional Dirac semimetals, their integrations with the optoelectronic devices allow the novel optical effects and functionalities. Here, we theoretically report the photonic spin Hall effect in a periodic structure, where three dimensional Dirac semimetals and the dielectric materials are assembled into the stack. The incident angle and frequency dependent spin shift spectrum reveals that the spin shifts of the transmitted wave in this structure emerge the obvious peaks and valleys for the horizontal polarized wave and their magnitudes and positions display a distinct dependence on the incident angle around the specific frequency. These observations originate from its zero value of the effective perpendicular permittivity and its greatly reduced transmission in the multilayered structure, whose mechanism is different from those in the previous works. Moreover, both the peaks and valleys of the transmitted spin shift are significantly sensitive to the Fermi energy of three dimensional Dirac semimetals, whose magnitudes and positions can be tuned by varying it. Our results highlight the vital role of three dimensional Dirac semimetals in their applications of the spin photonic devices and pave the way to explore the tunable photonic spin Hall effect by engineering their Fermi energies.

Dirac semimetal in ß-CuI without surface Fermi arcs.

Anomalous surface states with Fermi arcs are commonly considered to be a fingerprint of Dirac semimetals (DSMs). In contrast to Weyl semimetals, however, Fermi arcs of DSMs are not topologically protected. Using first-principles calculations, we predict that ß-cuprous iodide (ß-CuI) is a peculiar DSM whose surface states form closed Fermi pockets instead of Fermi arcs. In such a fermiological Dirac semimetal, the deformation mechanism from Fermi arcs to Fermi pockets stems from a large cubic term preserving all crystal symmetries and from the small energy difference between the surface and bulk Dirac points. The cubic term in ß-CuI, usually negligible in prototypical DSMs, becomes relevant because of the particular crystal structure. As such, we establish a concrete material example manifesting the lack of topological protection for surface Fermi arcs in DSMs.

Are the surface Fermi arcs in Dirac semimetals topologically protected?

Motivated by recent experiments probing anomalous surface states of Dirac semimetals (DSMs) Na3Bi and Cd3As2, we raise the question posed in the title. We find that, in marked contrast to Weyl semimetals, the gapless surface states of DSMs are not topologically protected in general, except on time-reversal-invariant planes of surface Brillouin zone. We first demonstrate this finding in a minimal four-band model with a pair of Dirac nodes at [Formula: see text] where gapless states on the side surfaces are protected only near [Formula: see text] We then validate our conclusions about the absence of a topological invariant protecting double Fermi arcs in DSMs, using a K-theory analysis for space groups of Na3Bi and Cd3As2 Generically, the arcs deform into a Fermi pocket, similar to the surface states of a topological insulator, and this pocket can merge into the projection of bulk Dirac Fermi surfaces as the chemical potential is varied. We make sharp predictions for the doping dependence of the surface states of a DSM that can be tested by angle-resolved photoemission spectroscopy and quantum oscillation experiments.

Pressure-induced superconductivity in a three-dimensional topological material ZrTe5.

As a new type of topological materials, ZrTe5 shows many exotic properties under extreme conditions. Using resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely suppressed at 6.2 GPa, a fully superconducting transition emerges. The superconducting transition temperature Tc increases with applied pressure, and reaches a maximum of 4.0 K at 14.6 GPa, followed by a slight drop but remaining almost constant value up to 68.5 GPa. At pressures above 21.2 GPa, a second superconducting phase with the maximum Tc of about 6.0 K appears and coexists with the original one to the maximum pressure studied in this work. In situ high-pressure synchrotron X-ray diffraction and Raman spectroscopy combined with theoretical calculations indicate the observed two-stage superconducting behavior is correlated to the structural phase transition from ambient Cmcm phase to high-pressure C2/m phase around 6 GPa, and to a mixture of two high-pressure phases of C2/m and P-1 above 20 GPa. The combination of structure, transport measurement, and theoretical calculations enable a complete understanding of the emerging exotic properties in 3D topological materials under extreme environments.

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts.

Three-dimensional (3D) Dirac semimetals are 3D analogues of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 has been predicted to be 3D Dirac semimetals and was subsequently demonstrated by angle-resolved photoemission spectroscopy. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts; they have shown ultrahigh mobility up to 1.15 × 10(5) cm(2) V(-1) s(-1) and pronounced Shubnikov-de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials toward exciting electronic applications of 3D Dirac semimetals.

Effects of electronic correlation on topological properties of Kagome semimetal Ni3In2S2.

Kagome metals gain attention as they manifest a spectrum of quantum phenomena such as superconductivity, charge order, frustrated magnetism, and allied correlated states of condensed matter. With regard to electronic band structure, several of them exhibit non-trivial topological characteristics. Here, we present a thorough investigation on the growth and the physical properties of single crystals of Ni3In2S2which is established to be a Dirac nodal line Kagome semimetal. Extensive characterization is attained through temperature and field-dependent resistivity, angle-dependent magnetoresistance (MR) and specific heat measurements. The central question we seek to address is the effect of electronic correlations in suppressing the manifestation of topological characteristics. In most metals, the Fermi liquid behaviour is restricted to a narrow range of temperatures. Here, we show that Ni3In2S2follows the Fermi-liquid behaviour up to 86 K. This phenomenon is further supported by a high Kadowaki-Woods ratio obtained through specific heat analysis. Different interpretations of the magneto-transport study reveal that MR exhibits linear behaviour, suggesting the presence of Dirac fermions at lower temperatures. The angle-dependent magneto-transport study obeys the Voigt-Thomson formula. This, on the contrary, implies the classical origin of MR. Thus, the effect of strong electron correlation in Ni3In2S2manifests itself in the anisotropic magneto-transport. Furthermore, the magnetization measurement shows the presence of de-Haas van Alphen oscillations. Calculations of the Berry phase provide insights into the topological features in the Kagome semimetal Ni3In2S2.

Double resonance between corner states in distinct higher-order topological phases.

Recent studies have shown that higher-order topologies in photonic systems lead to a robust enhancement of light-matter interactions. Moreover, higher-order topological phases have been extended to systems even without a band gap, as in Dirac semimetals. In this work, we propose a procedure to simultaneously generate two distinctive higher-order topological phases with corner states that allow a double resonant effect. This double resonance effect between the higher-order topological phases, was obtained from the design of a photonic structure with the ability to generate a higher-order topological (HOTI) insulator phase in the first bands and a higher-order Dirac half-metal phase (HODSM). Subsequently, using the corner states in both topological phases, we tuned the frequencies of both corner states such that they were separated in frequency by a second harmonic. This idea allowed us to obtain a double resonance effect with ultra-high overlap factors, and a considerable improvement in the nonlinear conversion efficiency. These results show the possibility of producing a second-harmonic generation with unprecedented conversion efficiencies in topological systems with simultaneous HOTI and HODSM phases. Furthermore, since the corner state in the HODSM phase presents an algebraic 1/rdecay, our topological system can be helpful in experiments about the generation of nonlinear Dirac-ligh-matter interactions.

Topology and Symmetry in Quantum Materials.

Interest in topological materials continues to grow unabated in view of their conceptual novelties as well as their potential as platforms for transformational new technologies. Electronic states in a topological material are robust against perturbations and support unconventional electromagnetic responses. The first-principles band-theory paradigm has been a key player in the field by providing successful prediction of many new classes of topological materials. This perspective presents a cross section through the recent work on understanding the role of geometry and topology in generating topological states and their responses to external stimuli, and as a basis for connecting theory and experiment within the band theory framework. In this work, effective strategies for topological materials discovery and impactful directions for future topological materials research are also commented.

Terahertz Nonlinear Hall Rectifiers Based on Spin-Polarized Topological Electronic States in 1T-CoTe2.

The zero-magnetic-field nonlinear Hall effect (NLHE) refers to the second-order transverse current induced by an applied alternating electric field; it indicates the topological properties of inversion-symmetry-breaking crystals. Despite several studies on the NLHE induced by the Berry-curvature dipole in Weyl semimetals, the direct current conversion by rectification is limited to very low driving frequencies and cryogenic temperatures. The nonlinear photoresponse generated by the NLHE at room temperature can be useful for numerous applications in communication, sensing, and photodetection across a high bandwidth. In this study, observations of the second-order NLHE in type-II Dirac semimetal CoTe2 under time-reversal symmetry are reported. This is determined by the disorder-induced extrinsic contribution on the broken-inversion-symmetry surface and room-temperature terahertz rectification without the need for semiconductor junctions or bias voltage. It is shown that remarkable photoresponsivity over 0.1 A W-1 , a response time of approximately 710 ns, and a mean noise equivalent power of 1 pW Hz-1/2 can be achieved at room temperature. The results open a new pathway for low-energy photon harvesting via nonlinear rectification induced by the NLHE in strongly spin-orbit-coupled and inversion-symmetry-breaking systems, promising a considerable impact in the field of infrared/terahertz photonics.

Band Engineering of Dirac Semimetals Using Charge Density Waves.

New developments in the field of topological matter are often driven by materials discovery, including novel topological insulators, Dirac semimetals, and Weyl semimetals. In the last few years, large efforts have been made to classify all known inorganic materials with respect to their topology. Unfortunately, a large number of topological materials suffer from non-ideal band structures. For example, topological bands are frequently convoluted with trivial ones, and band structure features of interest can appear far below the Fermi level. This leaves just a handful of materials that are intensively studied. Finding strategies to design new topological materials is a solution. Here, a new mechanism is introduced, which is based on charge density waves and non-symmorphic symmetry, to design an idealized Dirac semimetal. It is then shown experimentally that the antiferromagnetic compound GdSb0.46 Te1.48 is a nearly ideal Dirac semimetal based on the proposed mechanism, meaning that most interfering bands at the Fermi level are suppressed. Its highly unusual transport behavior points to a thus far unknown regime, in which Dirac carriers with Fermi energy very close to the node seem to gradually localize in the presence of lattice and magnetic disorder.

Non-Hermitian semi-Dirac semi-metals.

Recently, many novel and exotic phases have been proposed by considering the role of topology in non-Hermitian systems, and their emergent properties are of wide current interest. In this work we propose the non-Hermitian generalization of semi-Dirac semimetals, which feature a linear dispersion along one momentum direction and a quadratic one along the other. We study the topological phase transitions in such two-dimensional semi-Dirac semimetals in the presence of a particle gain-and-loss term. We show that such a non-Hermitian term creates exceptional points (EPs) originating out of each semi-Dirac point. We map out the topological phase diagram of our model, using winding number and vorticity as topological invariants of the system. By means of numerical and analytical calculations, we examine the nature of edge states for different types of semi-Dirac models and establish bulk-boundary correspondence and absence of the non-Hermitian skin effect, in one class. On the other hand, for other classes of semi-Dirac models with asymmetric hopping, we restore the non-Hermitian skin effect, an anomalous feature usually present in non-Hermitian topological systems.

Evolving Devil's Staircase Magnetization from Tunable Charge Density Waves in Nonsymmorphic Dirac Semimetals.

While several magnetic topological semimetals have been discovered in recent years, their band structures are far from ideal, often obscured by trivial bands at the Fermi energy. Square-net materials with clean, linearly dispersing bands show potential to circumvent this issue. CeSbTe, a square-net material, features multiple magnetic-field-controllable topological phases. Here, it is shown that in this material, even higher degrees of tunability can be achieved by changing the electron count at the square-net motif. Increased electron filling results in structural distortion and formation of charge density waves (CDWs). The modulation wave-vector evolves continuously leading to a region of multiple discrete CDWs and a corresponding complex "Devil's staircase" magnetic ground state. A series of fractionally quantized magnetization plateaus is observed, which implies direct coupling between CDW and a collective spin-excitation. It is further shown that the CDW creates a robust idealized nonsymmorphic Dirac semimetal, thus providing access to topological systems with rich magnetism.

Progress in Epitaxial Thin-Film Na3 Bi as a Topological Electronic Material.

Trisodium bismuthide (Na3 Bi) is the first experimentally verified topological Dirac semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realizing topological electronic devices such as topological transistors. Herein, an overview of the substantial progress achieved in the last few years on Na3 Bi is presented, with a focus on technologically relevant large-area thin films synthesized via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3 Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semiclassical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field-driven topological phase transitions, are addressed, with an outlook toward current challenges and expected future progress.