Improvement in CPP-GMR read head sensor performance using [001]-oriented polycrystalline half-metallic Heusler alloy Co2FeGa0.5Ge0.5 and CoFe bilayer electrode.

A current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) device with a half-metallic electrode is one of the most promising candidates of next-generation read head for hard disk drive. In this study, we fabricate [001]-oriented polycrystalline CPP-GMR devices with the normal ferromagnet (NFM) CoFe/half-metallic ferromagnet (HMFM) Co2FeGa0.5Ge0.5 (CFGG) bilayer electrodes to enhance the magnetoresistance (MR) ratio by large interfacial spin-dependent scattering at the NFM/HMFM interface. The CoFe/CFGG bilayer electrode provides the additional large interfacial spin-dependent scattering and achieves high MR ratio of 22.7% with the CoFe(4.5 nm)/CFGG(2.5 nm) bilayer electrodes, which is almost three(two) times larger than the MR ratio with the single CoFe(CFGG) (7 nm) electrodes. The bias voltage dependent study revealed an additional advantage of increasing the output voltage |ΔV| by using the CoFe/CFGG bilayer due to the improvement of the endurance against spin-transfer torque under high bias current. A maximum output voltage Δ V max of 6.5 mV was obtained with the CoFe(5.5 nm)/CFGG(1.5 nm) electrodes, which is the highest ever reported in the CPP-GMR devices with a uniform metallic spacer including high-quality epitaxial devices.

Large improvement of MR ratio and the highest output voltage has been achieved in the poly-crystalline CPP-GMR with the half-metallic Co₂FeGa_0.5Ge_0.5 and normal ferromagnetic CoFe bilayer electrodes.

Tuning crystal orientation and chiral spin order in Mn3Ge by annealing process and ion implantation.

The non-collinear antiferromagnetic Weyl semimetal Mn3X (X = Ga, Ge, Sn) system has attracted a lot of attentions owing to its robust anomalous Hall effect (AHE), large spin Hall angle and small net magnetization at room temperature. The high spin-charge interconversion efficiency makes it a super candidate in topological antiferromagnetic spintronic devices, which could facilitate ultra-fast operation of high-density devices with low energy consumption. In this work, we have realized to obtain different chiral spin structures in Heusler alloy Mn3Ge thin films, which originate from different crystalline orientations. The high-quality (0002)- and (202¯0)-oriented single phase hexagonal Mn3Ge films are achieved by controllable growth, annealing process and ion implantation. The various magnetic properties and AHE behaviors are observed alongaandccrystal axes, equivalent to magnetic field in and out of the inverse triangular spin plane. The observation demonstrates the manipulation of crystal structure accompanied with chiral spin order in a non-collinear antiferromagnetic Mn3Ge film, which is induced by energy conversion and defect introduction. Thein situthermal treatment induces crystal phase rotation up to 90° and robust AHE modulation, which is significantly important and highly desirable for flexible spin memory device applications.

Shaping Perpendicular Magnetic Anisotropy of Co2MnGa Heusler Alloy Using Ion Irradiation for Magnetic Sensor Applications.

Magnetic sensors are key elements in many industrial, security, military, and biomedical applications. Heusler alloys are promising materials for magnetic sensor applications due to their high spin polarization and tunable magnetic properties. The dynamic field range of magnetic sensors is strongly related to the perpendicular magnetic anisotropy (PMA). By tuning the PMA, it is possible to modify the sensing direction, sensitivity and even the accuracy of the magnetic sensors. Here, we report the tuning of PMA in a Co2MnGa Heusler alloy film via argon (Ar) ion irradiation. MgO/Co2MnGa/Pd films with an initial PMA were irradiated with 30 keV 40Ar+ ions with fluences (ions·cm-2) between 1 × 1013 and 1 × 1015 Ar·cm-2, which corresponds to displacement per atom values between 0.17 and 17, estimated from Monte-Carlo-based simulations. The magneto optical and magnetization results showed that the effective anisotropy energy (Keff) decreased from ~153 kJ·m-3 for the un-irradiated film to ~14 kJ·m-3 for the 1 × 1014 Ar·cm-2 irradiated film. The reduced Keff and PMA are attributed to ion-irradiation-induced interface intermixing that decreased the interfacial anisotropy. These results demonstrate that ion irradiation is a promising technique for shaping the PMA of Co2MnGa Heusler alloy for magnetic sensor applications.

Heusler alloys for spintronic devices: review on recent development and future perspectives.

Heusler alloys are theoretically predicted to become half-metals at room temperature (RT). The advantages of using these alloys are good lattice matching with major substrates, high Curie temperature above RT and intermetallic controllability for spin density of states at the Fermi energy level. The alloys are categorised into half- and full-Heusler alloys depending upon the crystalline structures, each being discussed both experimentally and theoretically. Fundamental properties of ferromagnetic Heusler alloys are described. Both structural and magnetic characterisations on an atomic scale are typically carried out in order to prove the half-metallicity at RT. Atomic ordering in the films is directly observed by X-ray diffraction and is also indirectly probed via the temperature dependence of electrical resistivity. Element specific magnetic moments and spin polarisation of the Heusler alloy films are directly measured using X-ray magnetic circular dichroism and Andreev reflection, respectively. By employing these ferromagnetic alloy films in a spintronic device, efficient spin injection into a non-magnetic material and large magnetoresistance are also discussed. Fundamental properties of antiferromagnetic Heusler alloys are then described. Both structural and magnetic characterisations on an atomic scale are shown. Atomic ordering in the Heusler alloy films is indirectly measured by the temperature dependence of electrical resistivity. Antiferromagnetic configurations are directly imaged by X-ray magnetic linear dichroism and polarised neutron reflection. The applications of the antiferromagnetic Heusler alloy films are also explained. The other non-magnetic Heusler alloys are listed. A brief summary is provided at the end of this review.

Electrodeposited Heusler Alloys-Based Nanowires for Shape Memory and Magnetocaloric Applications.

In this article, the downsizing of functional Heusler alloys is discussed, focusing on the published results dealing with Heusler alloy nanowires. The theoretical information inspired the fabrication of novel nanowires that are presented in the results section of the article. Three novel nanowires were fabricated with the compositions of Ni66Fe21Ga13, Ni58Fe28In14, and Ni50Fe31Sn19. The Ni66Fe21Ga13 nanowires were fabricated, aiming to improve the stoichiometry of previous functional Ni-Fe-Ga Heusler nanomaterials with a functional behavior above room temperature. They exhibit a phase transition at the temperature of ≈375 K, which results in a magnetocaloric response of |ΔSM| ≈ 0.12 J·kg-1·K-1 at the magnetic field change of only µ0ΔH = 1 T. Novel Heusler alloy Ni58Fe28In14 nanowires, as well as Ni50Fe31Sn19 nanowires, are analyzed for the first time, and their magnetic properties are discussed, introducing a simple electrochemical approach for the fabrication of nanodimensional alloys from mutually immiscible metals.

First-principles study of the structure, magnetism, and electronic properties of the all-Heusler alloy Co2MnGe/CoTiMnGe(100) heterojunction.

Based on first-principles calculations in the density functional theory, we systematically investigated the possible interface structure, magnetism, and electronic properties of the all-Heusler alloy Co2MnGe/CoTiMnGe(100) heterojunction. The calculation indicated that the Co2MnGe Heusler alloy is a half-metal with a magnetic moment of 4.97 µB. CoTiMnGe is a narrow-band gap semiconductor and may act as an ultra-sensitive photocatalyst. We cannot find an "ideal" spin-polarization of 100% in CoCo termination and MnGe termination. Due to the interface interaction, the direct magnetic hybridization or indirect RKKY exchange will be weakened, leading to an increase in the atomic magnetic moment of the interfacial layer. For eight possible heterojunction structures, the half-metallic gaps in the Co2MnGe bulk have been destroyed by the inevitable interface states. The spin-polarization value of 94.31% in the CoCo-TiGe-B heterojunction revealed that it is the most stable structure. It is feasible to search for high-performance magnetic tunnel junction by artificially constructing suitable all-Heusler alloy heterojunctions.

Mechanistic Insights into the Direct Deoxygenation of Phenolic Compounds over Novel Heusler Alloy Catalysts.

The catalytic deoxygenation of phenolic compounds is a crucial step in the valorization of biomass resources, which can effectively enhance the heating value and stability of primary biofuel. In this study, the catalytic mechanism of four Heusler alloy catalysts for the direct deoxidation pathway of phenol was studied through electronic structure regulation by element occupation. We found that Heusler alloys catalysts exhibit excellent catalytic activity in the dissociation activation of H2 and the cleavage of aryl hydroxyl bond (CAr-OH) bonds. The energy barriers for the direct cleavage of the CAr-OH bond in phenol on Ni2MoAl, Co2MoAl, Ni2NbAl and Ni2MoGa catalysts are 0.86, 0.95, 1.09, and 1.28 eV, respectively. And Y element of the X2YZ catalyst has a significant impact on this reaction, while the X element has a complex influence on the hydrogenation step of the unsaturated benzene ring. Microkinetic analysis further substantiates that the phenol (CAr-OH) bond cleavage step in the reaction exhibits a fast reaction rate and high extent of reaction. The reaction of hydroxyl hydrogenation to produce water exhibits the highest energy barrier, serving as the rate-determining step of the entire reaction. This issue could potentially be addressed by further fine-tuning the electronic structure.

Nanoporous copper titanium tin (np-Cu2TiSn) Heusler alloy prepared by dealloying-induced phase transformation for electrocatalytic nitrate reduction to ammonia.

Heusler alloys are a series of well-established intermetallic compounds with abundant structure and elemental substitutions, which are considered as potentially valuable catalysts for integrating multiple reactions owing to the features of ordered atomic arrangement and optimized electronic structure. Herein, a nanoporous copper titanium tin (np-Cu2TiSn) Heusler alloy is successfully prepared by the (electro)chemical dealloying transformation method, which exhibits high nitrate (NO3-) reduction performance with an NH3 Faradaic efficiency of 77.14 %, an NH3 yield rate of 11.90 mg h-1 mg-1cat, and a stability for 100 h under neutral condition. Significantly, we also convert NO3- to high-purity ammonium phosphomolybdate with NH4+ collection efficiency of 83.8 %, which suggests a practical approach to convert wastewater nitrate into value-added ammonia products. Experiments and theoretical calculations reveal that the electronic structure of Cu sites is modulated by the ligand effect of surrounding Ti and Sn atoms, which can simultaneously enhance the activation of NO3-, facilitate the desorption of NH3, and reduce the energy barriers, thereby boosting the electrochemical nitrate reduction reaction.

Co2 FeGe Heusler Alloy Nanoparticle Catalysts for Propyne Hydrogenation and Ammonia Decomposition.

Heusler alloys (X2 YZ) can be a candidate for new catalysts as well as other intermetallic compounds. We previously found good catalytic properties of Co2 FeGe for selective hydrogenation of alkynes and developed nanoparticles of Co2 FeGe supported on SiO2 . However, the average diameter of the nanoparticles was 23 nm, which is not small enough compared to those of state-of-the-art nanoparticle catalysts. In this study, we developed SiO2 -supported Co2 FeGe nanoparticles of <10 nm in diameter. A catalytic test for selective hydrogenation of propyne indicated a partial formation of sites with low selectivity including excess Co atoms. For ammonia decomposition, enhancement of turnover frequency was achieved by reducing the particle size.

Structure and Magnetic Properties of Mechanosynthesized Nanocrystalline Fe2CrSi Heusler Alloy.

Heusler alloys constitute an interesting group of materials with wide applications. The purpose of the present study was to use the mechanical alloying method to synthesize Fe2CrSi Heusler alloy and learn about its structure and magnetic properties. Pure metal elements were ground for various periods of time in a planetary ball mill, and the process of alloy formation was monitored using X-ray diffraction and Mössbauer spectroscopy. It was found that after 20 h of milling, the disordered BCC solid solution was formed, with an average crystallite size ~11 nm. After thermal treatment, the desired Fe2CrSi Heusler alloy was obtained, with a small amount of secondary phases. Detailed XRD analysis showed the coexistence of two varieties of Heusler phase, namely Fm-3m and Pm-3n. The main result of this work is the detection of the hyperfine magnetic field distribution using Mössbauer spectroscopy. The occurrence of this distribution proves atomic disorder in the crystalline structure of the obtained Heusler alloy. Macroscopic magnetic measurements revealed soft magnetic properties of the alloy, with a magnetic moment of ~2.3 µB/f.u., only slightly larger than the theoretically predicted value.

Effect of Melt-Spinning Parameters on the Structure and Properties of Ni55.5Mn18.8Ga24Si1.7 Heusler Alloy Ribbons.

Ni-Mn-based Heusler alloys are known to demonstrate magnetic shape memory and giant magnetocaloric effect (MCE). These effects depend on the phases, crystallographic and magnetic phase transitions, and the crystallographic texture characteristics. These structural characteristics, in turn, are a function of the processing parameters. In the current work, Ni55.5Mn18.8Ga24Si1.7 Heusler alloy was processed by melt-spinning under a helium atmosphere. This process results in a fine microstructure. The ribbon that was produced with a narrower nozzle width, faster wheel speed, and higher cast temperature, indicating a faster cooling rate, had double the magnetic entropy change close to room temperature. However, the other ribbon demonstrated a large entropy change over a broader temperature range, extending its usability. The effect of the melt-spinning process parameters on the developing microstructure, crystallographic structure and texture, transformation temperatures, and the magnetic entropy change were studied to explain the difference in magnetocaloric behavior.

Large Thermo-Spin Effects in Heusler Alloy-Based Spin Gapless Semiconductor Thin Films.

Recently, Heusler alloy-based spin gapless semiconductors (SGSs) with high Curie temperature (TC) and sizable spin polarization have emerged as potential candidates for tunable spintronic applications. We report comprehensive investigation of the temperature-dependent ANE and intrinsic longitudinal spin Seebeck effect (LSSE) in CoFeCrGa thin films grown on MgO substrates. Our findings show that the anomalous Nernst coefficient for the MgO/CoFeCrGa (95 nm) film is ≈1.86 µV K-1 at room temperature, which is nearly 2 orders of magnitude higher than that of the bulk polycrystalline sample of CoFeCrGa (≈0.018 µV K-1) and almost 3 orders of magnitude higher than that of the half-metallic ferromagnet La1-xNaxMnO3 (≈0.005 µV K-1) but comparable to that of the magnetic Weyl semimetal Co2MnGa thin film (≈2-3 µV K-1). Furthermore, the LSSE coefficient for our MgO/CoFeCrGa (95 nm)/Pt (5 nm) heterostructure is ≈20.5 nV K-1 Ω-1 at room temperature, which is twice larger than that of the half-metallic ferromagnetic La0.7Sr0.3MnO3 thin films (≈9 nV K-1 Ω-1). We show that both ANE and LSSE coefficients follow identical temperature dependences and exhibit a maximum at ≈225 K, which is understood as the combined effects of inelastic magnon scatterings and reduced magnon population at low temperatures. Our analyses not only indicate that the extrinsic skew scattering is the dominating mechanism for ANE in these films but also provide critical insights into the functional form of the observed temperature-dependent LSSE at low temperatures. Furthermore, by employing radio frequency transverse susceptibility and broad-band ferromagnetic resonance in combination with the LSSE measurements, we establish a correlation among the observed LSSE signal, magnetic anisotropy, and Gilbert damping of the CoFeCrGa thin films, which will be beneficial for fabricating tunable and highly efficient Heusler alloy-based spin caloritronic nanodevices.

Toward High Conversion Efficiency of Thermoelectric Modules through Synergistical Optimization of Layered Materials.

Waste-heat electricity generation using high-efficiency solid-state conversion technology can significantly decrease dependence on fossil fuels. Here, a synergistical optimization of layered half-Heusler (hH) materials and module to improve thermoelectric conversion efficiency is reported. This is realized by manufacturing multiple thermoelectric materials with major compositional variations and temperature-gradient-coupled carrier distribution by one-step spark plasma sintering. This strategy provides a solution to overcome the intrinsic concomitants of the conventional segmented architecture that only considers the matching of the figure of merit (zT) with the temperature gradient. The current design is dedicated to temperature-gradient-coupled resistivity and compatibility matching, optimum zT matching, and reducing contact resistance sources. By enhancing the quality factor of the materials by Sb-vapor-pressure-induced annealing, a superior zT of 1.47 at 973 K is achieved for (Nb, Hf)FeSb hH alloys. Along with the low-temperature high-zT hH alloys of (Nb, Ta, Ti, V)FeSb, the single stage layered hH modules are developed with efficiencies of ≈15.2% and ≈13.5% for the single-leg and unicouple thermoelectric modules, respectively, under ΔT of 670 K. Therefore, this work has a transformative impact on the design and development of next-generation thermoelectric generators for any thermoelectric material families.

Magnetic Shape-Memory Heuslers Turn to Bio: Cytocompatibility of Ni-Mn-Ga Films and Biomedical Perspective.

Magnetic shape-memory (MSM) Heuslers have attracted great attention in recent years for both caloric and magnetomechanical applications. Thanks to their multifunctional properties, they are also promising for a vast variety of biomedical applications. However, this topic has been rarely investigated so far. In this communication, we present the first report on the absence of cytotoxicity of MSM Heuslers in Ni-Mn-Ga epitaxial thin films and the perspective toward bioapplications. Qualitative and quantitative biological characterizations reveal that Ni-Mn-Ga films can promote the adhesion and proliferation of human fibroblasts without eliciting any cytotoxic effect. Additionally, our findings show that the morphology, composition, microstructure, phase transformation, and magnetic characteristics of the films are well preserved after the biological treatments, making the material a promising candidate for further investigations.

Efficient Spin-Orbit Torque Switching in a Perpendicularly Magnetized Heusler Alloy MnPtGe Single Layer.

Electrically manipulating magnetic moments by spin-orbit torque (SOT) has great potential applications in magnetic memories and logic devices. Although there have been rich SOT studies on magnetic heterostructures, low interfacial thermal stability and high switching current density still remain an issue. Here, highly textured, polycrystalline Heusler alloy MnxPtyGe (MPG) films with various thicknesses are directly deposited onto thermally oxidized silicon wafers. The perpendicular magnetization of the MPG single layer can be reversibly switched by electrical current pulses with a magnitude as low as 4.1 × 1010Am-2, as evidenced by both the electrical transport and the magnetic optical measurements. The switching is shown to arise from inversion symmetry breaking due to the vertical composition gradient of the films after sample annealing. The SOT effective fields of the samples are analyzed systematically. It is found that the SOT efficiency increases with the film thickness, suggesting a robust bulk-like behavior in the single magnetic layer. Furthermore, a memristive characteristic has been observed due to a multidomain switching property in the single-layer MPG device. Additionally, deterministic field-free switching of magnetization is observed when the electric current flows orthogonal to the direction of the in-plane compositional gradient due to the in-plane symmetry breaking. This work proves that the MPG is a good candidate to be utilized in high-density and efficient magnetoresistive random access memory devices and other spintronic applications.

Electrical and Magnetic Transport Properties of Co2VGa Half-Metallic Heusler Alloy.

This study performed a systematic experimental investigation into the structural, magnetic, and transport properties of the Co2VGa Heusler alloy, which was theoretically predicted to exhibit half-metallic ferromagnetism. It has been experimentally found that the studied alloy has a relatively high-ordered L21 cubic structure at room temperature and orders ferromagnetically below ~350 K. Interestingly, by fitting the electric transport data with the properly governing equations in two different temperature regions, the two-magnon scattering process (the T9/2 dependence) appears in the temperature range from 30 to 75 K. Moreover, the magnetoresistance effect changes from a negative value to a positive value when the temperature is below 100 K. Such experimental findings provide indirect evidence that the half-metallic nature of this alloy is retained only when the temperature is below 100 K. On the other hand, the magnetic transport measurements indicate that the anomalous Hall coefficient of this alloy increases when the temperature increases and reaches a relatively high value (~8.3 µΩ·cm/T) at 300 K due to its lower saturated magnetization. By analyzing the anomalous Hall resistivity scale with the longitudinal resistivity, it was also found that the anomalous Hall effect can be ascribed to the combined effect of extrinsic skew scattering and intrinsic Berry curvature, but the latter contribution plays a dominant role.

Anomalous Hall effect in topological Weyl and nodal-line semimetal Heusler compound Co2VAl.

Magnetic topological semimetals (TSMs) with broken time-reversal symmetry are very rare and have drawn significant attention in condensed matter physics due to their numerous intriguing topological properties. Among these various magnetic TSMs, Co2-based full Heusler compounds are of current interest, since a few of these materials exhibit Weyl and nodal fermions in their topological band structure. In this work, we report a comprehensive study of anomalous Hall effect (AHE) in the ferromagnetic full Heusler compound Co2VAl. Recent studies indicate that the intrinsic AHE is closely related to the Berry curvature of the occupied electronic Bloch states. The present study of Co2VAl attempts to understand and explore the possibility of topology-induced AHE. The anomalous Hall resistivityρxyAis observed to scale quadratically with the longitudinal resistivityρxx. Our experimental results also reveal that the anomalous Hall conductivity (AHC) is ∼85 cm-1at 2 K with an intrinsic contribution of ∼75.6 S cm-1, and is nearly insensitive to temperature. The first principle calculations note that the Berry curvature originated from a gapped nodal line and symmetry-protected Weyl nodes near the Fermi level (EF) is the main source of AHE in this compound. Thus, this investigation on Co2VAl discloses that it is a ferromagnetic Weyl and nodal-line TSM. The theoretically calculated AHC is in well agreement with the experimentally obtained AHC.

Half-Metallic Heusler Alloy/MoS2 Based Magnetic Tunnel Junction.

Integration of half-metallic materials and 2D spacers into vertical magnetoresistive spin valves may pave the way for effective low-power consumption storage and memory technologies. Driven by the recent successful growth of graphene/half-metallic Co2Fe(Ge1/2Ga1/2) (CFGG) heterostructure, here we report a theoretical investigation of magnetic tunnel junction (MTJ) based on the ferromagnetic CFGG Heusler alloy and the MoS2 spacer of different thicknesses. Using ab initio approach, we demonstrate that the inherent ferromagnetism of CFGG is preserved at the interface, while its half-metallicity is recovering within few atomic layers. Ballistic transport in CFGG/MoS2/CFGG MTJ is studied within the nonequilibrium Green's function formalism, and a large magnetoresistance value up to ∼105% is observed. These findings support the idea of effective spintronics devices based on half-metallic Heusler alloys and highly diversified transition metal dichalcogenide family.

New Metastable Baro- and Deformation-Induced Phases in Ferromagnetic Shape Memory Ni2MnGa-Based Alloys.

Structural and phase transformations in the microstructure and new metastable baro- and deformation-induced phases of the Ni50Mn28.5Ga21.5 alloy, typical of the unique class of ferromagnetic shape memory Heusler alloys, have been systematically studied for the first time. Phase X-ray diffraction analysis, transmission and scanning electron microscopy, and temperature measurements of electrical resistivity and magnetic characteristics in strong magnetic fields were used. It was found that in the course of increasing the pressure from 3 to 12 GPa, the metastable long-period structure of martensite modulated according to the 10M-type experienced transformation into a final non-modulated 2M structure. It is proved that severe shear deformation by high pressure torsion (HPT) entails grainsize refinement to a nanocrystalline and partially amorphized state in the polycrystalline structure of the martensitic alloy. In this case, an HPT shear of five revolutions under pressure of 3 GPa provided total atomic disordering and a stepwise structural-phase transformation (SPT) according to the scheme 10M → 2M → B2 + A2, whereas under pressure of 5 GPa the SPT took place according to the scheme 10M → 2M → B2 → A1. It is shown that low-temperature annealing at a temperature of 573 K caused the amorphous phase to undergo devitrification, and annealing at 623-773 K entailed recrystallization with the restoration of the L21 superstructure in the final ultrafine-grained state. The size effect of suppression of the martensitic transformation in an austenitic alloy with a critical grain size of less than 100 nm at cooling to 120 K was determined. It was established that after annealing at 773 K, a narrow-hysteresis thermoelastic martensitic transformation was restored in a plastic ultrafine-grained alloy with the formation of 10M and 14M martensite at temperatures close to those characteristic of the cast prototype of the alloy.

Microstructures and Interface Magnetic Moments in Mn2VAl/Fe Layered Films Showing Exchange Bias.

Heusler alloys are a material class exhibiting various magnetic properties, including antiferromagnetism. A typical application of antiferromagnets is exchange bias that is a shift of the magnetization curve observed in a layered structure consisting of antiferromagnetic and ferromagnetic films. In this study, a layered sample consisting of a Heusler alloy, Mn2VAl and a ferromagnet, Fe, is selected as a material system exhibiting exchange bias. Although the fully ordered Mn2VAl is known as a ferrimagnet, with an optimum fabrication condition for the Mn2VAl layer, the Mn2VAl/Fe layered structure exhibits exchange bias. The appearance of the antiferromagnetic property in the Mn2VAl is remarkable; however, the details have been unclear. To clarify the microscopic aspects on the crystal structures and magnetic moments around the Mn2VAl/Fe interface, cross-sectional scanning transmission electron microscope (STEM) observation, and synchrotron soft X-ray magnetic circular dichroism (XMCD) measurements were employed. The high-angle annular dark-field STEM images demonstrated clusters of Mn2VAl with the L21 phase distributed only around the interface to the Fe layer in the sample showing the exchange bias. Furthermore, antiferromagnetic coupling between the Mn- and Fe-moments were observed in element-specific hysteresis loops measured using the XMCD. The locally ordered L21 phase and antiferromagnetic Mn-moments in the Mn2VAl were suggested as important factors for the exchange bias.