Investigation of the diameter-dependent piezoelectric response of semiconducting ZnO nanowires by Piezoresponse Force Microscopy and FEM simulations.

Semiconducting piezoelectric nanowires (NWs) are promising candidates to develop highly efficient mechanical energy transducers made of biocompatible and non-critical materials. The increasing interest in mechanical energy harvesting makes the investigation of the competition between piezoelectricity, free carrier screening and depletion in semiconducting NWs essential. To date, this topic has been scarcely investigated because of the experimental challenges raised by the characterization of the direct piezoelectric effect in these nanostructures. Here we get rid of these limitations using the piezoresponse force microscopy technique in DataCube mode and measuring the effective piezoelectric coefficient through the converse piezoelectric effect. We demonstrate a sharp increase in the effective piezoelectric coefficient of vertically aligned ZnO NWs as their radius decreases. We also present a numerical model which quantitatively explains this behavior by taking into account both the dopants and the surface traps. These results have a strong impact on the characterization and optimization of mechanical energy transducers based on vertically aligned semiconducting NWs.

Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN.

The electron optical phase contrast probed by electron holography at n-n+ GaN doping steps is found to exhibit a giant enhancement, in sharp contrast to the always smaller than expected phase contrast reported for p-n junctions. We unravel the physical origin of the giant enhancement by combining off-axis electron holography data with self-consistent electrostatic potential calculations. The predominant contribution to the phase contrast is shown to arise from the doping dependent screening length of the surface Fermi-level pinning, which is induced by FIB-implanted carbon point defects below the outer amorphous shell. The contribution of the built-in potential is negligible for modulation doping and only relevant for large built-in potentials at e.g. p-n junctions. This work provides a quantitative approach to so-called dead layers at TEM lamellas.

Dimensional Roadmap for Maximizing the Piezoelectrical Response of ZnO Nanowire-Based Transducers: Impact of Growth Method.

ZnO nanowires are excellent candidates for energy harvesters, mechanical sensors, piezotronic and piezophototronic devices. The key parameters governing the general performance of the integrated devices include the dimensions of the ZnO nanowires used, their doping level, and surface trap density. However, although the method used to grow these nanowires has a strong impact on these parameters, its influence on the performance of the devices has been neither elucidated nor optimized yet. In this paper, we implement numerical simulations based on the finite element method combining the mechanical, piezoelectric, and semiconducting characteristic of the devices to reveal the influence of the growth method of ZnO nanowires. The electrical response of vertically integrated piezoelectric nanogenerators (VING) based on ZnO nanowire arrays operating in compression mode is investigated in detail. The properties of ZnO nanowires grown by the most widely used methods are taken into account on the basis of a thorough and comprehensive analysis of the experimental data found in the literature. Our results show that the performance of VING devices should be drastically affected by growth method. Important optimization guidelines are found. In particular, the optimal nanowire radius that would lead to best device performance is deduced for each growth method.