Current Sensor Integration Issues with Wide-Bandgap Power Converters.

Precise current sensing is essential for several power electronics' protection, control, and reliability mechanisms. Even so, WBG power converters will likely struggle to develop a single current-sensing scheme to measure various types of currents due to the limited space and size of these devices, the required high sensing speed, and the high electromagnetic interference (EMI) emissions they cause. Analysis of existing current sensors was conducted in such terms with the objective of understanding the challenges associated with their integration into WBG power converters. Since each of these requirements has different design tradeoffs, it is challenging to consider one specific method of current sensing to be perfect for all situations; thus, the possibility of developing novel methods to improve the performance of these single-scheme current sensors is further explored.

Anti-adipogenic activities of pheophorbide a and pyropheophorbide a isolated from wild bitter gourd (Momordica charantia L. var. abbreviata Seringe) in vitro.

BACKGROUND: The wild bitter gourd (WBG) is a commonly consumed vegetable in Asia that has antioxidant and hypoglycemic properties. The present study aimed to investigate the anti-adipogenic activities of isolated compounds from WBG on 8-day differentiated cultures of 3 T3-L1 adipocytes that were then stained with Oil Red O (ORO) or diamidino-2-phenylindole (DAPI). RESULTS: ORO stains of the methanol extracts of de-seeded HM86 cultivar of WBG (WBG-M) and the ethyl acetate fractions (WBG-M-EA) showed anti-adipogenic activities against differentiated adipocytes. Two chlorophyll-degraded compounds, pheophorbide a (1) and pyropheophorbide a (2), were isolated from WBG-M-EA. Treatments with 1 (5, 10, and 20 µmol L-1 ) and 2 (2.5, 5, and 10 µmol L-1 ) showed dose-dependent reductions in lipid accumulations and reduced nuclear DAPI stains in differentiated 3 T3-L1 adipocytes. The concentrations for 50% inhibition against lipid accumulations of 1 and 2, respectively, were 16.05 and 7.04 µmol L-1 . Treatments with 1 and 2 showed enhanced lactate dehydrogenase release in the first 4-day cell mitotic clonal expansions during the differentiating cultural processes, although the effect was less on the non-differentiating cultural processes. Thus, 1 and 2 were more toxic to differentiating adipocytes than to non-differentiated pre-adipocytes, which partly resulted in anti-adipogenic activities with lowered lipid accumulations. CONCLUSION: Both 1 and 2 showed anti-adipogenic activities in cell models. These chlorophyll-degraded compounds commonly exist in several vegetables during storage or edible seaweeds, which will provide resources for further investigations aiming to test anti-obesity in animal studies. © 2022 Society of Chemical Industry.

Defects in epitaxial 4H-SiC revealed by exciton recombination.

In this work, we conducted an analysis of 4H-SiC epitaxial layer grown on two distinct 4H-SiC substrates (both 6 inches in diameter) using non-invasive techniques such as micro-Raman spectroscopy, steady-state absorption spectroscopy and time-resolved photoluminescence spectroscopy. We have shown that despite the doping homogeneity, confirmed by micro-Raman and steady-state absorption spectroscopy, the carrier lifetime, assessed by monitoring the excitonic band at 3.2 eV by time-resolved photoluminescence spectroscopy, depends on the position on the wafer. This variability is attributed to the presence of defects, such as impurities or point defects, which are not uniformly distributed on the epitaxial layer and that, in addition to extended defects, affect the charge carrier recombination. Additionally, it is found that interactions with the underlying substrate could contribute to these effects as evidenced in regions of the substrate characterized by differences of doping.

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.

Metal-oxide-semiconductor (MOS) capacitors with Al2O3 as a gate insulator are fabricated on cubic silicon carbide (3C-SiC). Al2O3 is deposited both by thermal and plasma-enhanced Atomic Layer Deposition (ALD) on a thermally grown 5 nm SiO2 interlayer to improve the ALD nucleation and guarantee a better band offset with the SiC. The deposited Al2O3/SiO2 stacks show lower negative shifts of the flat band voltage VFB (in the range of about -3 V) compared with the conventional single SiO2 layer (in the range of -9 V). This lower negative shift is due to the combined effect of the Al2O3 higher permittivity (ε = 8) and to the reduced amount of carbon defects generated during the short thermal oxidation process for the thin SiO2. Moreover, the comparison between thermal and plasma-enhanced ALD suggests that this latter approach produces Al2O3 layers possessing better insulating behavior in terms of distribution of the leakage current breakdown. In fact, despite both possessing a breakdown voltage of 26 V, the T-ALD Al2O3 sample is characterised by a higher current density starting from 15 V. This can be attributable to the slightly inferior quality (in terms of density and defects) of Al2O3 obtained by the thermal approach and, which also explains its non-uniform dC/dV distribution arising by SCM maps.

Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor.

Proton irradiation experiments have been used as a surrogate for studying radiation effects in numerous materials for decades. The abundance and accessibility of proton accelerators make this approach convenient for conducting accelerated radiation ageing studies. However, developing new materials with improved radiation stability requires numerous model materials, test samples, and very effective utilization of the accelerator beam time. Therefore, the question of optimal beam current, or particle flux, is critical and needs to be adequately understood. In this work, we used 5 MeV protons to introduce displacement damage in gallium arsenide samples using a wide range of flux values. Positron annihilation lifetime spectroscopy was used to quantitatively assess the concentration of radiation-induced survived vacancies. The results show that proton fluxes in range between 1011 and 1012 cm-2.s-1 lead to a similar concentration of monovacancies generated in the GaAs semiconductor material, while a further increase in the flux leads to a sharp drop in this concentration.

A mitochondrion-associated PPR protein, WBG1, regulates grain chalkiness in rice.

Rice kernel quality has vital commercial value. Grain chalkiness deteriorates rice's appearance and palatability. However, the molecular mechanisms that govern grain chalkiness remain unclear and may be regulated by many factors. In this study, we identified a stable hereditary mutant, white belly grain 1 (wbg1), which has a white belly in its mature grains. The grain filling rate of wbg1 was lower than that of the wild type across the whole filling period, and the starch granules in the chalky part were oval or round and loosely arranged. Map-based cloning showed that wbg1 was an allelic mutant of FLO10, which encodes a mitochondrion-targeted P-type pentatricopeptide repeat protein. Amino acid sequence analysis found that two PPR motifs present in the C-terminal of WBG1 were lost in wbg1. This deletion reduced the splicing efficiency of nad1 intron 1 to approximately 50% in wbg1, thereby partially reducing the activity of complex I and affecting ATP production in wbg1 grains. Furthermore, haplotype analysis showed that WBG1 was associated with grain width between indica and japonica rice varieties. These results suggested that WBG1 influences rice grain chalkiness and grain width by regulating the splicing efficiency of nad1 intron 1. This deepens understanding of the molecular mechanisms governing rice grain quality and provides theoretical support for molecular breeding to improve rice quality.

Design and Implementation of an Integrated Control Scheme for GaN-Based Multiple Power Converters.

In response to the rapid changes in the international energy environment, developing renewable energy (RE)-based distributed generation (DG) and various smart micro-grid systems is crucial for creating a robust electric power grid and new energy industries. In this aspect, there is an urgent need to develop hybrid power systems suitable for coexistent AC and DC power grids, integrated by high-performance wide ban gap (WBG) semiconductor-based power conversion interfaces and advanced operating and control strategies. Due to the intrinsic feature of variation in RE-based power generation, the design and integration of energy storage devices, real-time regulation of power flow, and intelligent energy control schemes are key technologies for further promoting DG systems and micro-grids. This paper investigates an integrated control scheme for multiple GaN-based power converters in a small- to medium-capacity, grid-connected, and RE-based power system. This is the first time that a complete design case demonstrating three GaN-based power converters with different control functions integrated with a single digital signal processor (DSP) chip to achieve a reliable, flexible, cost effective, and multifunctional power interface for renewable power generation systems is presented. The system studied includes a photovoltaic (PV) generation unit, a battery energy storage unit, a grid-connected single-phase inverter, and a power grid. Based on system operation condition and the state of charge (SOC) of the energy storage unit, two typical operating modes and advanced power control functions are developed with a fully digital and coordinated control scheme. Hardware of the GaN-based power converters and digital controllers are designed and implemented. The feasibility and effectiveness of the designed controllers and overall performance of the proposed control scheme are verified with results from simulation and experimental tests on a 1-kVA small-scale hardware system.

Design and Implementation of a SiC-Based Multifunctional Back-to-Back Three-Phase Inverter for Advanced Microgrid Operation.

Because of the worldwide trend of microgrid (MG) and renewable energy (RE)-based distributed power generation (DG), advanced power flow control schemes with wide bandgap (WBG) semiconductor technologies to ensure high-level performance of grid-connected MGs is one of the crucial research topics. In grid-connected MGs, a static switch (SS) is commonly used at the point of common coupling (PCC) of two systems. In this paper, the role of SS is replaced by a SiC-based three-phase back-to-back (BTB) inverter system for seamless switching between grid-connected and standalone modes through advanced power flow control schemes. According to scenarios of different grid/load conditions and available DG capacities in an MG, various advanced control functions can be developed for both MG operating modes: bidirectional control of active and reactive power flows, seamless switching between operating modes, improvement of grid power quality (PQ), and voltage stabilization. In this paper, mathematical models of the BTB inverter in a synchronous reference frame (SRF) is first derived, and the required controllers are then designed. For functional testing, two typical cases are simulated and analyzed in a MATLAB/Simulink environment and then verified through 1kVA small-scale hardware implementation with Texas Instruments (TI) digital signal processor (DSP) TMS320LF2812 as the control core. Results show satisfactory performances of power flow control and PQ improvement of MG.

Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme.

The modern trend of decarbonization has encouraged intensive research on renewable energy (RE)-based distributed power generation (DG) and smart grid, where advanced electronic power interfaces are necessary for connecting the generator with power grids and various electrical systems. On the other hand, modern technologies such as Industry 4.0 and electrical vehicles (EV) have higher requirements for power converters than that of conventional applications. Consequently, the enhancement of power interfaces will play an important role in the future power generation and distribution systems as well as various industrial applications. It has been discovered that wide-bandgap (WBG) switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) offer considerable potential for outperforming conventional silicon (Si) switching devices in terms of breakdown voltage, high temperature capability, switching speed, and conduction losses. This paper investigates the performance of a 2kVA three-phase static synchronous compensator (STATCOM) based on a GaN HEMTs-based voltage-source inverter (VSI) and a neural network-based hybrid control scheme. The proportional-integral (PI) controllers along with a radial basis function neural network (RBFNN) controller for fast reactive power control are designed in synchronous reference frame (SRF). Both simulation and hardware implementation are conducted. Results confirm that the proposed RBFNN assisted hybrid control scheme yields excellent dynamic performance in terms of various reactive power tracking control of the GaN HEMTs-based three-phase STATCOM system.

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications.

Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices' driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.

Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining.

This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al2O3) and silicon nitride (Si3N4-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al2O3 substrate at power over 200 W was about twice higher than DBC-Si3N4 and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al2O3 was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si3N4 and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.