Simulation and Experimental Research on a Beam Homogenization System of a Semiconductor Laser.

Aiming at the application of laser active imaging detection technology, this paper studied the beam homogenization system of a semiconductor laser based on a homogenizing pipe. Firstly, the principle of the homogenizing pipe was introduced. Secondly, the homogenization effect, which was influenced by several geometric parameters (aperture size, length, and taper) of the homogenizing pipe using the optical design software, was simulated for the fiber-coupled semiconductor laser. Finally, according to the simulated results, a laser illumination system composed of a fiber-coupled semiconductor laser, a homogenizing pipe, and an aspheric lens was designed, which can obtain a rectangular uniform light spot in a long distance. The effectiveness of the illumination system was verified by simulation and experiment, respectively. Simulation results suggested that the uniformity of the spot at a distance of 20 m was 85.6%, while divergence angle was 10 mrad. The uniformity of the spot at a distance of 120 m was 91.5%, while divergence angle was 10 mrad. Experimental results showed that the uniformity of the spot at a distance of 20 m was 87.7%, while divergence angle was 13 mrad. The uniformity of the spot at a distance of 120 m was 93.3%, while divergence angle was 15 mrad. The laser illumination system designed in this paper was simple and easy to assemble, and has strong practicability. The results in this paper have certain reference value and guiding significance for the homogenization design of semiconductor lasers.

Electroluminescence from HgTe Nanocrystals and Its Use for Active Imaging.

Mercury telluride (HgTe) nanocrystals are among the most versatile infrared (IR) materials with the absorption of lowest energy optical absorption which can be tuned from the visible to the terahertz range. Therefore, they have been extensively considered as near IR emitters and as absorbers for low-cost IR detectors. However, the electroluminescence of HgTe remains poorly investigated despite its ability to go toward longer wavelengths compared to traditional lead sulfide (PbS). Here, we demonstrate a light-emitting diode (LED) based on an indium tin oxide (ITO)/zinc oxide (ZnO)/ZnO-HgTe/PbS/gold-stacked structure, where the emitting layer consists of a ZnO/HgTe bulk heterojunction which drives the charge balance in the system. This LED has low turn-on voltage, long lifetime, and high brightness. Finally, we conduct short wavelength infrared (SWIR) active imaging, where illumination is obtained from a HgTe NC-based LED, and demonstrate moisture detection.