Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors.

In this work, we demonstrate enhancement-mode field-effect transistors by an atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controllable thickness of In2O3 at atomic scale enables the design of sufficient 2D carrier density in the In2O3 channel integrated with the conventional dielectric. The threshold voltage and channel carrier density are found to be considerably tuned by channel thickness. Such a phenomenon is understood by the trap neutral level (TNL) model, where the Fermi-level tends to align deeply inside the conduction band of In2O3 and can be modulated to the bandgap in atomic layer thin In2O3 due to the quantum confinement effect, which is confirmed by density function theory (DFT) calculation. The demonstration of enhancement-mode amorphous In2O3 transistors suggests In2O3 is a competitive channel material for back-end-of-line (BEOL) compatible transistors and monolithic 3D integration applications.

Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current.

High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analogue applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current in planar FET, exceeding 10 A/mm, the performance of which is 2-3 times better than all known transistors with semiconductor channels. A high transconductance reaches 4 S/mm, recorded among all transistors with a planar structure. Planar FETs working ballistically or quasi-ballistically are exploited as one of the simplest platforms to investigate the intrinsic transport properties. It is found experimentally and theoretically that a high carrier density and high electron velocity both contribute to this high on-state performance in ALD In2O3 transistors, which is made possible by the high-quality oxide/oxide interface, the metal-like charge-neutrality-level (CNL) alignment, and the high band velocities induced by the low density-of-state (DOS). Experimental Hall, I-V, and split C-V measurements at room temperature confirm a high carrier density of up to 6-7 × 1013 /cm2 and a high velocity of about 107 cm/s, well-supported by density functional theory (DFT) calculations. The simultaneous demonstration of such high carrier concentration and average band velocity is enabled by the exploitation of the ultrafast pulse scheme and heat dissipation engineering.