Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor.

Capacitive devices have drawn a beautiful application scene in electronic device systems ranging from touch sensors, energy storages and multifunction transistors, but serving as memristive term is still blank. Sweet potato peel (SPP) as function layer was employed to develop the memristive device with Ag/SPP/F-doped SnO2 (FTO) structure. A current-voltage (I-V) hysteresis, which is characterized by a typical capacitive behavior, is impressively observed in the developed device. Nonvolatile data storage is feasible using the non-zero-crossing I-V hysteresis because the resistance states can be well maintained. Charge transfer at the Ag/SPP and SPP/FTO interfaces, and the interplay between Ag+ ions and charges are responsible for this non-zero-crossing I-V hysteresis behaviors. This work possibly gives an insight into the data storage in terms of a new conception electronic device based on environment-friendly material.

Bias-dependent effects in planar perovskite solar cells based on CH3NH3PbI(3-x)Clx films.

A unique bias-dependent phenomenon in CH3NH3PbI(3-x)Cl(x) based planar perovskite solar cells has been demonstrated, in which the photovoltaic parameters derived from the current-voltage (I-V) curves are highly dependent on the initial positive bias of the I-V measurement. In FTO/CH3NH3PbI(3-x)Cl(x)/Au devices, the open-circuit voltage and short-circuit current increased by ca. 337.5% and 281.9% respectively, by simply increasing the initial bias from 0.5 V to 2.5 V.