The Light Wavelength, Intensity, and Biasing Voltage Dependency of the Dark and Photocurrent Densities of a Solution-Processed P3HT:PC61BM Photodetector for Sensing Applications.

The promising possibility of an organic photodetector (OPD) is emerging in the field of sensing applications for its tunable absorption range, flexibility, and large-scale fabrication abilities. In this work, we fabricated a bulk heterojunction OPD with a device structure of glass/ITO/PEDOT:PSS/P3HT:PC61BM/Al using the spin-coating process and characterized the dark and photocurrent densities at different applied bias conditions for red, green, and blue incident LEDs. The OPD photocurrent density exhibited a magnitude up to 2.5-3 orders higher compared to the dark current density at a -1 V bias while it increased by up to 3-4 orders at zero bias conditions for red, green, and blue lights, showing an increasing trend when a higher voltage is applied in the negative direction. Different OPD inner periphery shapes, the OPD to LED distance, and OPD area were also considered to bring the variation in the OPD dark and photocurrent densities, which can affect the on/off ratio of the OPD-LED hybrid system and is a critical phenomenon for any sensing application.

Development of n-Type Small-Molecule Acceptors for Low Dark Current Density and Fast Response Organic Photodetectors.

Suppressing the dark current density (Jd) while maintaining sufficient charge transport is important for improving the specific detectivity (D*) and dynamic characteristics of organic photodetectors (OPDs). In this study, we synthesized three novel small-molecule acceptors (SMAs) densely surrounded by insulating alkyl side chains to minimize the Jd in OPDs. Introducing trialkylated N-annulated perylene diimide as a terminal moiety to the alkylated π-conjugated core structure was highly efficient in suppressing Jd in the devices, resulting in an extremely low Jd of 4.60 × 10-11 A cm-2 and 10-100 times improved D* values in the devices. In addition, SMAs with a geometrically aligned backbone structure exhibited better intermolecular ordering in the blended films, resulting in 3-10 times as high responsivity (R) values in the OPDs. Outstanding OPD performances with a D* of 8.09 × 1012 Jones, -3 dB cutoff frequency of 205.2 kHz, and rising response time of 16 µs were achieved under a 530 nm illumination in photoconductive mode. Geometrically aligned core-terminal SMAs densely surrounded by insulating alkyl side chains are promising for improving the static and dynamic properties of OPDs.

Interface-Engineered Organic Near-Infrared Photodetector for Imaging Applications.

We report a high-speed low dark current near-infrared (NIR) organic photodetector (OPD) on a silicon substrate with amorphous indium gallium zinc oxide (a-IGZO) as the electron transport layer (ETL). In-depth understanding of the origin of dark current is obtained using an elaborate set of characterization techniques, including temperature-dependent current-voltage measurements, current-based deep-level transient spectroscopy (Q-DLTS), and transient photovoltage decay measurements. These characterization results are complemented by energy band structures deduced from ultraviolet photoelectron spectroscopy. The presence of trap states and a strong dependency of activation energy on the applied reverse bias voltage point to a dark current mechanism based on trap-assisted field-enhanced thermal emission (Poole-Frenkel emission). We significantly reduce this emission by introducing a thin interfacial layer between the donor: acceptor blend and the a-IGZO ETL and obtain a dark current as low as 125 pA/cm2 at an applied reverse bias of -1 V. Thanks to the use of high-mobility metal-oxide transport layers, a fast photo response time of 639 ns (rise) and 1497 ns (fall) is achieved, which, to the best of our knowledge, is among the fastest reported for NIR OPDs. Finally, we present an imager integrating the NIR OPD on a complementary metal oxide semiconductor read-out circuit, demonstrating the significance of the improved dark current characteristics in capturing high-quality sample images with this technology.

High-Performance All-Polymer Photodetectors Enabled by New Random Terpolymer Acceptor with Fine-Tuned Molecular Weight.

Reducing the dark current density and enhancing the overall performance of the device is the focal point in research for organic photodetectors. Two novel random terpolymers (P3 and P4) with different molecular weights are synthesized and evaluated as acceptors in bulk heterojunction (BHJ) polymer photodetectors. Compared with known acceptor materials, such as N2200 (P1) and F-N2200 (P2), polymer P4 has a lower lowest unoccupied molecular orbital (LUMO) energy level, favorable morphology, and good miscibility with a donor material J71, which leads to proper phase separation of the blend film and better dissociation of excitons and transport of carriers. Therefore, a considerably low dark current density (Jd) of 1.9 × 10-10 A/cm2 and a high specific detectivity (D*) of 1.8 × 1013 cm Hz1/2/W (also "Jones") at 580 nm under a -0.1 V bias are realized for the P4-based photodetector. More importantly, the device also exhibits a fast response speed (τr/τf = 1.24/1.87 µs) and a wide linear dynamic range (LDR) of 109.2 dB. This work demonstrates that high-performance all-polymer photodetectors with ideal morphology can be realized by random polymer acceptors with a fine-tuned molecular weight.

Copper Thiocyanate as an Anode Interfacial Layer for Efficient Near-Infrared Organic Photodetector.

Interfacial modification between the electrode and the overlying organic layer has significant effects on the charge injection and collection and thus the device performance of organic photodetectors. Here, we used copper(I) thiocyanate (CuSCN) as the anode interfacial layer for organic photodetector, which was inserted between the anode and an organic light-sensitive layer. The CuSCN layer processed with ethyl sulfide solution presented similar optical properties to the extensively used anode interlayer of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), while the relatively shallow conduction band of CuSCN resulted in a much higher electron-injection barrier from the anode and shunt resistance than those of PEDOT:PSS. Moreover, the CuSCN-based device also exhibited an increased depletion width for the PEDOT:PSS-based device, as indicated by the Mott-Schottky analysis. These features lead to the dramatically reduced dark current density of 2.7 × 10-10 A cm-2 and an impressively high specific detectivity of 4.4 × 1013 cm Hz1/2 W-1 under -0.1 V bias and a working wavelength of 870 nm. These findings demonstrated the great potential of using CuSCN as an anode interfacial layer for developing high-performance near-infrared organic photodetectors.

High-Sensitivity Visible-Near Infrared Organic Photodetectors Based on Non-Fullerene Acceptors.

Highly sensitive solution-processed organic photodetectors (OPDs) with a broadband response ranging from visible to near infrared (NIR) and excellent overall device performance are demonstrated. The OPDs were fabricated from a blend consisting of a wide-band gap polymer donor and a newly developed fused octacylic small-molecule electron acceptor with an acceptor-donor-acceptor structure, which shows relatively high and balanced hole/electron mobility and allows for a thicker photo-active layer (∼300 nm). In conjunction with the use of an optimized inverted device structure, the dark current density of the OPDs was suppressed to an ultralow level of (8.3 ± 5.5) × 10-10A cm-2 at a bias of -1 V and the capability to direct weak light intensity is down to 0.24 pW cm-2; both are among the lowest reported values for OPDs. Owing to the low shot noise enabled by the inverted structure and the low thermal noise due to the high shunt resistance of the device, the obtained OPDs show a spectrally flat photoresponse in the range of 350-950 nm (UV-vis-NIR) and a maximal specific detectivity (D*) of (2.1 ± 0.1) × 1013 Jones at 800-900 nm, which are among the best results of NIR OPDs reported to date and represents a highly sensitive photodetector for weak optical signal detection. Besides, the OPDs show a wide bandwidth of 30 kHz, a fast temporal response time around 12 us ∼14 us, and a large linear dynamic range of 106 dB.

High-Performance Organic Photodetectors from a High-Bandgap Indacenodithiophene-Based π-Conjugated Donor-Acceptor Polymer.

A conjugated donor-acceptor polymer, poly[4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydro- s-indaceno[1,2- b:5,6- b']dithiophene-2,7-diyl- alt-5-(2-ethylhexyl)-4 H-thieno[3,4- c]pyrrole-4,6(5 H)-dione-1,3-diyl] (PIDT-TPD), is blended with the fullerene derivative [6,6]phenyl-C61-butyric acid methyl ester (PC61BM) for the fabrication of thin and solution-processed organic photodetectors (OPDs). Systematic screening of the concentration ratio of the blend and the molecular weight of the polymer is performed to optimize the active layer morphology and the OPD performance. The device comprising a medium molecular weight polymer (27.0 kg/mol) in a PIDT-TPD:PC61BM 1:1 ratio exhibits an external quantum efficiency of 52% at 610 nm, a dark current density of 1 nA/cm2, a detectivity of 1.44 × 1013 Jones, and a maximum 3 dB cutoff frequency of 100 kHz at -5 V bias. These results are remarkable among the state-of-the-art red photodetectors based on conjugated polymers. As such, this work presents a functional organic active material for high-speed OPDs with a linear photoresponse at different light intensities.