Unraveling the Oxidation Kinetics Through Electronic Structure Regulation of MnCo2O4.5@Ni3S2 p-n Junction for Urea-Assisted Electrocatalytic Activity.

A promising strategy to boost electrocatalytic performance is via assembly of hetero-nanostructured electrocatalysts that delivers the essential specific surface area and also active sites by lowering the reaction barrier. However, the challenges associated with the intricate designs and mechanisms remain underexplored. Therefore, the present study constructs a p-n junction in a free-standing MnCo2O4.5@Ni3S2 on Ni-Foam. The space-charge region's electrical characteristics is dramatically altered by the formed p-n junction, which enhances the electron transfer process for urea-assisted electrocatalytic water splitting (UOR). The optimal MnCo2O4.5@Ni3S2 electrocatalyst results in greater oxygen evolution reactivity (OER) than pure systems, delivering an overpotential of only 240 mV. Remarkably, upon employing as UOR electrode the required potential decreases to 30 mV. The impressive performance of the designed catalyst is attributed to the enhanced electrical conductivity, greater number of electrochemical active sites, and improved redox activity due to the junction interface formed between p-MnCo2O4.5 and n-Ni3S2. There are strong indications that the in situ formed extreme-surface NiOOH, starting from Ni3S2, boosts the electrocatalytic activity, i.e., the electrochemical  surface reconstruction generates the active species. In conclusion, this work presents a high-performance p-n junction design for broad use, together with a viable and affordable UOR electrocatalyst.

Differential phase contrast (DPC) mapping electric fields: Optimising experimental conditions.

DPC in Scanning Transmission Electron Microscopy (STEM) is a valuable method for mapping the electric fields in semiconductor materials. However, optimising the experimental conditions can be challenging. In this paper, we test and compare critical experimental parameters, including the convergence angle, camera length, acceleration voltage, sample configuration, and orientation using a four-quadrant segmented detector and a Si specimen containing layers of different As concentrations. The DPC measurements show a roughly linear correlation with the estimated electric fields, until the field gets close to the detection limitation, which is ∼0.5 mV/nm with a sample thickness of ∼145 nm. These results can help inform which technique to use for different user cases: When the electric field at a planar junction is above ∼0.5 mV/nm, DPC with a segmented detector is practical for electric field mapping. With a planar junction, the DPC signal-to-noise ratio can be increased by increasing the specimen thickness. However, for semiconductor devices with electric fields smaller than ∼0.5 mV/nm, or for devices containing curved junctions, DPC is unreliable and techniques with higher sensitivity will need to be explored, such as 4D STEM using a pixelated detector.

Nanoclay-Modulated Interfacial Chemical Bond and Internal Electric Field at the Co3 O4 /TiO2 p-n Junction for Efficient Charge Separation.

To achieve a high separation efficiency of photogenerated carriers in semiconductors, constructing high-quality heterogeneous interfaces as charge flow highways is critical and challenging. This study successfully demonstrates an interfacial chemical bond and internal electric field (IEF) simultaneously modulated 0D/0D/1D-Co3 O4 /TiO2 /sepiolite composite catalyst by exploiting sepiolite surface-interfacial interactions to adjust the Co2+ /Co3+ ratio at the Co3 O4 /TiO2 heterointerface. In situ irradiation X-ray photoelectron spectroscopy and density functional theory (DFT) calculations reveal that the interfacial Co2+ OTi bond (compared to the Co3+ OTi bond) plays a major role as an atomic-level charge transport channel at the p-n junction. Co2+ /Co3+ ratio increase also enhances the IEF intensity. Therefore, the enhanced IEF cooperates with the interfacial Co2+ OTi bond to enhance the photoelectron separation and migration efficiency. A coupled photocatalysis-peroxymonosulfate activation system is used to evaluate the catalytic activity of Co3 O4 /TiO2 /sepiolite. Furthermore, this work demonstrates how efficiently separated photoelectrons facilitate the synergy between photocatalysis and peroxymonosulfate activation to achieve deep pollutant degradation and reduce its ecotoxicity. This study presents a new strategy for constructing high-quality heterogeneous interfaces by consciously modulating interfacial chemical bonds and IEF, and the strategy is expected to extend to this class of spinel-structured semiconductors.

Optimized dopant imaging for GaN by a scanning electron microscopy.

Two-dimensional dopant profiling is vital for the modelling, design, diagnosis and performance improvement of semiconductor devices and related research and development. Scanning electron microscopy (SEM) has shown great potential for dopant profiling. In this study, the effects of secondary electron (SE) detectors and imaging parameters on the contrast imaging of multilayered p-n and p-i junction GaN specimens via SEM were studied to enable dopant profiling. The doping contrast of the image captured by the in-lens detector was superior to that of the image captured by the side-attached Everhart-Thornley detector at lower acceleration voltages (Vacc ) and small working distances (WD). Furthermore, the doping contrast levels of the in-lens detector-obtained image under different combinations of Vacc and WD were studied, and the underlying mechanism was explored according to local external fields and the refraction effect. The difference in the angular distributions of SEs emitted from different regions, the response of the three types of SEs to detectors, and the solid angles of detectors toward the specimen surface considerably influenced the results. This systematic study will enable the full exploitation of SEM for accurate dopant profiling, improve the analysis of the doping contrast mechanism, and further improve doping contrast for semiconductors.

Quantitative characterization of built-in potential profile across GaAs p-n junctions using Kelvin probe force microscopy with qPlus sensor AFM.

The electrostatic potential distribution in materials and devices plays an important role in controlling the behaviors of charge carriers. Kelvin probe force microscopy (KPFM) is a powerful technique for measuring the surface potential at a high spatial resolution. However, the measured surface potential often deviates from the potential deep in the bulk owing to certain factors. Here, we performed KPFM measurements across the p-n junction, in which such factors were eliminated as much as possible by selecting the sample, force sensor, and measurement mode. The measured surface potential distribution agrees well with the line shape of the simulated bulk potential. Our results demonstrate that KPFM is capable of quantitatively characterizing potential distributions whose changes occur on the order of 10 nm.

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs.

Conventional designs of an avalanche photodiode (APD) have been based on a planar p-n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge breakdown by special measures. Most modern silicon photomultipliers (SiPM) are designed as an array of Geiger-mode APD cells based on planar p-n junctions. However, the planar design faces an inherent trade-off between photon detection efficiency and dynamic range due to loss of an active area at the cell edges. Non-planar designs of APDs and SiPMs have also been known since the development of spherical APDs (1968), metal-resistor-semiconductor APDs (1989), and micro-well APDs (2005). The recent development of tip avalanche photodiodes (2020) based on the spherical p-n junction eliminates the trade-off, outperforms the planar SiPMs in the photon detection efficiency, and opens new opportunities for SiPM improvements. Furthermore, the latest developments in APDs based on electric field-line crowding and charge-focusing topology with quasi-spherical p-n junctions (2019-2023) show promising functionality in linear and Geiger operating modes. This paper presents an overview of designs and performances of non-planar APDs and SiPMs.

Road Map of Semiconductor Metal-Oxide-Based Sensors: A Review.

Identifying disease biomarkers and detecting hazardous, explosive, flammable, and polluting gases and chemicals with extremely sensitive and selective sensor devices remains a challenging and time-consuming research challenge. Due to their exceptional characteristics, semiconducting metal oxides (SMOxs) have received a lot of attention in terms of the development of various types of sensors in recent years. The key performance indicators of SMOx-based sensors are their sensitivity, selectivity, recovery time, and steady response over time. SMOx-based sensors are discussed in this review based on their different properties. Surface properties of the functional material, such as its (nano)structure, morphology, and crystallinity, greatly influence sensor performance. A few examples of the complicated and poorly understood processes involved in SMOx sensing systems are adsorption and chemisorption, charge transfers, and oxygen migration. The future prospects of SMOx-based gas sensors, chemical sensors, and biological sensors are also discussed.

Continuous Modulation of Electrocatalytic Oxygen Reduction Activities of Single-Atom Catalysts through p-n Junction Rectification.

Fine-tuning single-atom catalysts (SACs) to surpass their activity limit remains challenging at their atomic scale. Herein, we exploit p-type semiconducting character of SACs having a metal center coordinated to nitrogen donors (MeNx ) and rectify their local charge density by an n-type semiconductor support. With iron phthalocyanine (FePc) as a model SAC, introducing an n-type gallium monosulfide that features a low work function generates a space-charged region across the junction interface, and causes distortion of the FeN4 moiety and spin-state transition in the FeII center. This catalyst shows an over two-fold higher specific oxygen-reduction activity than that of pristine FePc. We further employ three other n-type metal chalcogenides of varying work function as supports, and discover a linear correlation between the activities of the supported FeN4 and the rectification degrees, which clearly indicates that SACs can be continuously tuned by this rectification strategy.

A highly tunable photoelectric response of graphene field-effect transistor with lateral P-N junction in channel.

This paper reports a highly tunable photoelectric response of graphene field-effect transistor (GFET) with lateral P-N junction in channel. The poly(sulfobetaine methacrylate) (PSBMA) provides strong N-type doping on graphene due to the dipole moment of pendent groups after ultraviolet annealing in high vacuum. A lateral P-N junction is introduced into the channel of the GFET by partially covering the graphene channel with PSBMA. With such P-N junction in the channel, the GFET exhibits a highly tunable photoelectric response over a wide range of exciting photon wavelength. With a lateral P-N junction in the channel, the polarity of photocurrent (Iph) of the GFET switches three times as the back-gate voltage (VBG) scan over two Dirac-point voltages. The underlying physical mechanism of photoelectric response is attributed to photovoltaic and photo-induced bolometric effect, which compete to dominatingIphat variousVBG. This provides a possible strategy for designing new phototransistors or optoelectronic device in the future.

Nanoscale probing of surface potential landscape at MoS2/BP van der Waals p-n heterojunction.

2D van der Waals heterostructure paves a path towards next generation semiconductor junctions for nanoelectronics devices in the post silicon era. Probing the band alignment at a real condition of such 2D contacts and experimental determination of its junction parameters is necessary to comprehend the charge diffusion and transport through such 2D nano-junctions. Here, we demonstrate the formation of the p-n junction at the MoS2/Black phosphorene (BP) interface and conduct a nanoscale investigation to experimentally measure the band alignment at real conditions by means of measuring the spatial distribution of built-in potential, built-in electric field, and depletion width using the Kelvin probe force microscopy (KPFM) technique. We show that optimization of lift scan height is critical for defining the depletion region of MoS2/BP with nanoscale precision using the KPFM technique. The variations in the built-in potential and built-in electric field with varying thicknesses of MoS2are revealed and calibrated.

Modeling of the electron beam induced current signal in nanowires with an axial p-n junction.

A tridimensional mathematical model to calculate the electron beam induced current (EBIC) of an axial p-n nanowire junction is proposed. The effect of the electron beam and junction parameters on the distribution of charge carriers and on the collected EBIC current is reported. We demonstrate that the diffusion of charge carriers within the wire is strongly influenced by the electrical state of its lateral surface which is characterized by a parameter called surface recombination velocity (vr). When the surface recombination is weak (i.e. lowvrvalue), the diffusion of charge carriers occurs in one dimension (1D) along the wire axis, and, in this case, the use of bulk EBIC models to extract the diffusion length (L) of charge carriers is justified. However, when the surface effects are strong (i.e. highvrvalues), the diffusion happens in three dimensions (3D). In this case, the EBIC profiles depend onvrvalue and two distinct cases can be defined. If theLis larger than the nanowire radius (ra), the EBIC profiles show a strong dependency with this parameter. This gives evidence that the recombination of generated carriers on the surface throughvris the dominant process. In this situation, a decrease of two orders of magnitude in the EBIC profiles computed with a high and a lowvrvalue is observed in neutral regions of the junction. For the case ofLsmaller thanrathe dependency of the EBIC profiles on thevris weak, and the prevalent recombination mechanism is the bulk recombination process.

p-n Junction Based Direct-Current Triboelectric Nanogenerator by Conjunction of Tribovoltaic Effect and Photovoltaic Effect.

Triboelectric nanogenerators (TENGs) have attracted much interest in recent years, due to its effectiveness and low cost for converting high-entropy mechanical energy into electric power. The traditional TENGs generate an alternating current, which requires a rectifier to provide a direct-current (DC) power supply. Herein, a dynamic p-n junction based direct-current triboelectric nanogenerator (DTENG) is demonstrated. When a p-Si wafer is sliding on a n-GaN wafer, carriers are generated at the interface and a DC current is produced along the direction of the built-in electric field, which is called the tribovoltatic effect. Simultaneously, an UV light is illuminated on the p-n junction to enhance the output. The results indicate that the current increases 13 times and the voltage increases 4 times under UV light (365 nm, 28 mW/cm2) irradiation. This work demonstrates the coupling between the tribovoltaic effect and the photovoltaic effect in DTENG semiconductors, promoting further development for energy harvesting in mechanical energy and photon energy.

Device architectures for low voltage and ultrafast graphene integrated phase modulators.

The atomic layer thin geometry and semi-metallic band diagram of graphene can be utilized for significantly improving the performance matrix of integrated photonic devices. Its semiconductor-like behavior of Fermi-level tunability allows graphene to serve as an active layer for electro-optic modulation. As a low loss metal layer, graphene can be placed much closer to active layer for low voltage operation. In this work, we investigate hybrid device architectures utilizing semiconductor and metallic properties of the graphene for ultrafast and energy efficient electro-optic phase modulators on semiconductor and dielectric platforms. (1) Directly contacted graphene-silicon heterojunctions. Without oxide layer, the carrier density of graphene can be modulated by the directly contact to silicon layer, while silicon intrinsic region stays mostly depleted. With doped silicon as electrodes, carrier can be quickly injected and depleted from the active region in graphene. The ultrafast carrier transit time and small RC constant promise ultrafast modulation speed (3dB bandwidth of 67 GHz) with an estimated Vπ·L of 1.19 V·mm. (2) Graphene integrated lithium niobite modulator. As a transparent electrode, graphene can be placed close to integrated lithium niobate waveguide for improving coupling coefficient between optical mode profile and electric field with minimal additional loss (4.6 dB/cm). Numerical simulation indicates 2.5× improvement of electro-optic field overlap coefficient, with estimated V π of 0.2 V.

Preparation and characterization of self-assembled ZnO nanowire devices: nanowire strain sensor and homogeneous p-n junction.

In this work, intrinsic and p-type ZnO nanowires (NWs) have been synthesized. Pure intrinsic ZnO nanowires have been fabricated by direct oxidation method and their aspect ratio reached up to 271.3. Sb-doped ZnO nanowires were uniformly grown on Si substrates by chemical vapor deposition with diameters ranging from 0.5 to 5µm and lengths ranging from 100µm to 3 mm. Directional arrangement of nanowires has been realized by two self-assembly methods, pulling method and water flow method, and two kinds of ZnO nanodevices (strain sensor and homogenous p-n junction) were prepared and characterized based on the directional arranged nanowires. According to the current response of ZnO nanowire strain sensor, the deformation quantities of elastic plate under the action of external forces in orthogonalXandYdirection were calculated respectively. The ZnO nanowire homogenous p-n junction was made of two vertical Sb-doped and intrinsic ZnO nanowires. TheI-Vcharacteristic curve showed good rectification characteristics, and the forward turn-on voltage was about 10 V. However, since the current was too small due to the small carrier concentration in the ZnO single crystal, it is difficult to achieve electroluminescence at present.

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy.

Semiconductor p-n junctions are essential building blocks of electronic and optoelectronic devices. Although vertical p-n junction structures can be formed readily by growing in sequence, lateral p-n junctions normal to surface direction can only be formed on specially patterned substrates or by post-growth implantation of one type of dopant while protecting the oppositely doped side. In this study, we report the monolithic formation of lateral p-n junctions in GaAs nanowires (NWs) on a planar substrate sequentially through the Au-assisted vapor-liquid-solid selective lateral epitaxy using metalorganic chemical vapor deposition. p-type and n-type segments are formed by modulating the gas phase flow of p-type (diethylzinc) and n-type (disilane) precursorsin situduring nanowire growth, allowing independent sequential control of p- and n-doping levels self-aligned in-plane in a single growth run. The p-n junctions formed are electrically characterized by fabricating arrays of p-n junction NW diodes with coplanar ohmic metal contacts and two-terminalI-Vmeasurements. The lateral p-n diode exhibits a 2.15 ideality factor and a rectification ratio of ∼106. The electron beam-induced current measurement confirms the junction position. The extracted minority carrier diffusion length is much higher compared to those previously reported, suggesting a low surface recombination velocity in these lateral NWp-n diodes.

Phase-transition-induced p-n junction in single halide perovskite nanowire.

Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.

CdTe X/γ-ray Detectors with Different Contact Materials.

Different contact materials and optimization of techniques of their depositions expand the possibilities to obtain high performance room temperature CdTe-based X/γ-ray detectors. The heterostructures with ohmic (MoOx) and Schottky (MoOx, TiOx, TiN, and In) contacts, created by DC reactive magnetron sputtering and vacuum thermal evaporation, as well as In/CdTe/Au diodes with a p-n junction, formed by laser-induced doping, have been developed and investigated. Depending on the surface pre-treatment of semi-insulating p-CdTe crystals, the deposition of a MoOx film formed either ohmic or Schottky contacts. Based on the calculations and I-V characteristics of the Mo-MoOx/p-CdTe/MoOx-Mo, In/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, and Ti-TiN/p-CdTe/MoOx-Mo Schottky-diode detectors, the current transport processes were described in the models of the carrier generation-recombination within the space-charge region (SCR) at low bias, and space-charge limited current incorporating the Poole-Frenkel effect at higher voltages, respectively. The energies of generation-recombination centers, density of trapping centers, and effective carrier lifetimes were determined. Nanosecond laser irradiation of the In electrode, pre-deposited on the p-CdTe crystals, resulted in extending the voltage range, corresponding to the carrier generation-recombination in the SCR in the I-V characteristics of the In/CdTe/Au diodes. Such In/CdTe/Au p-n junction diode detectors demonstrated high energy resolutions (7%@59.5 keV, 4%@122 keV, and 1.6%@662 keV).

Pure Graphene Oxide Vertical p-n Junction with Remarkable Rectification Effect.

Graphene p-n junctions have important applications in the fields of optical interconnection and low-power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I-V curve of the pGO vertical p-n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p-n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p-n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n-type semiconductor; theoretical calculations and research show that GO is generally a p-type semiconductor with a bandgap, thereby forming a p-n junction. Our work provides a method for preparing undoped GO vertical p-n junctions with advantages such as simplicity, convenience, and large-scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.

Ag2 S-CdS p-n Nanojunction-Enhanced Photocatalytic Oxidation of Alcohols to Aldehydes.

Selective oxidation of alcohols to aldehydes under mild conditions is important for the synthesis of high-value-added organic intermediates but still very challenging. For most of the thermal and photocatalytic systems, noble metal catalysts or harsh reaction conditions are required. Herein, the synthesis and use of Ag2 S-CdS p-n nanojunctions as an efficient photocatalyst for selective oxidation of a series of aromatic alcohols to their corresponding aldehydes is reported. High quantum efficiencies (59.6% and 36.9% under 380 and 420 nm, respectively) are achieved in air atmosphere at room temperature. Photoluminescence and photo-electrochemical tests show that the excellent performance is mainly due to the p-n junction-enhanced charge separation and transfer for the activation of both O2 (in air) and substrates. This study demonstrates the potential of p-n junction in photocatalytic synthesis under mild conditions.

Homogeneous 2D MoTe2 CMOS Inverters and p-n Junctions Formed by Laser-Irradiation-Induced p-Type Doping.

Among all typical transition-metal dichalcogenides (TMDs), the bandgap of α-MoTe2 is smallest and is close to that of conventional 3D Si. The properties of α-MoTe2 make it a favorable candidate for future electronic devices. Even though there are a few reports regarding fabrication of complementary metal-oxide-semiconductor (CMOS) inverters or p-n junction by controlling the charge-carrier polarity of TMDs, the fabrication process is complicated. Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p-n junction diode and CMOS inverter on a single α-MoTe2 nanoflake. The n-doped channel of a single α-MoTe2 nanoflake is selectively converted to a p-doped region via laser-irradiation-induced MoOx doping. The homogeneous 2D MoTe2 CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NMH = 0.52 VDD , NML = 0.40 VDD ), and an AC gain of 4 at 10 kHz. The results show that the doping technique by laser scan can be potentially used for future larger-scale MoTe2 CMOS circuits.