Hole Relaxation Bottlenecks in CdSe/CdTe/CdSe Lateral Heterostructures Lead to Bicolor Emission.

Concentric lateral CdSe/CdTe/CdSe heterostructures show bicolor photoluminescence from both a red charge transfer band of the CdSe/CdTe interface and a green fluorescence from CdSe. This work uses visible and near-infrared transient spectroscopy measurements to demonstrate that the deviation from Kasha's rule arises from a hole relaxation bottleneck from CdSe to CdTe. Hole transfer can take up to 1 ns, which permits radiative relaxation of excitons remaining in CdSe. Simulations indicate that the hole relaxation bottleneck arises due to the sparse density of states and poor spatial overlap of hole states at energies near the CdSe band edge. The divergent kinetics of transfer for band edge and hot holes is exploited to vary the ratio of green and red photoluminescence with excitation wavelength, providing another knob to control emission color. These findings support the use of lateral heterojunctions as a method for slowing carrier relaxation in two-dimensional materials.

Unveiling Spatiotemporal Diffusion of Hot Carriers Influenced by Spatial Nonuniform Hot Phonon Bottleneck Effect in Monolayer MoS2.

The exceptional semiconducting properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) have made them highly promising for the development of future electronic and optoelectronic devices. Extensive studies of TMDs are partly associated with their ability to generate 2D-confined hot carriers above the conduction band edges, enabling potential applications that rely on such transient excited states. In this work, room-temperature spatiotemporal hot carrier dynamics in monolayer MoS2 is studied by transient absorption microscopy (TAM), featuring an initial ultrafast expansion followed by a rapid negative diffusion, and ultimately a slow long-term expansion of the band edge C-excitons. We provide direct experimental evidence to identify the abnormal negative diffusion process as a spatial contraction of the hot carriers resulting from spatial variation in the hot phonon bottleneck effect due to the Gaussian intensity distribution of the pump laser beam.

Polaritonic Bottleneck in Colloidal Quantum Dots.

Controlling the relaxation dynamics of excitons is key to improving the efficiencies of semiconductor-based applications. Confined semiconductor nanocrystals (NCs) offer additional handles to control the properties of excitons, for example, by changing their size or shape, resulting in a mismatch between excitonic gaps and phonon frequencies. This has led to the hypothesis of a significant slowing-down of exciton relaxation in strongly confined NCs, but in practice due to increasing exciton-phonon coupling and rapid multiphonon relaxation channels, the exciton relaxation depends only weakly on the size or shape. Here, we focus on elucidating the nonradiative relaxation of excitons in NCs placed in an optical cavity. We find that multiphonon emission of carrier governs the decay, resulting in a polariton-induced phonon bottleneck with relaxation time scales that are slower by orders of magnitude compared to the cavity-free case, while the photon fraction plays a secondary role.

Insights to Carrier-Phonon Interactions in Lead Halide Perovskites via Multi-Pulse Manipulation.

A fundamental understanding of the hot-carrier dynamics in halide perovskites is crucial for unlocking their prospects for next generation photovoltaics. Presently, a coherent picture of the hot carrier cooling process remains patchy due to temporally overlapping contributions from many-body interactions, multi-bands, band gap renormalization, Burstein-Moss shift etc. Pump-push-probe (PPP) spectroscopy recently emerges as a powerful tool complementing the ubiquitous pump-probe (PP) spectroscopy in the study of hot-carrier dynamics. However, limited information from PPP on the initial excitation density and carrier temperature curtails its full potential. Herein, this work bridges this gap in PPP with a unified model that retrieves these essential hot carrier metrics like initial carrier density and carrier temperature under the push conditions, thus permitting direct comparison with traditional PP spectroscopy. These results are well-fitted by the phonon bottleneck model, from which the longitudinal optical phonon scattering time τLO , for MAPbBr3 and MAPbI3 halide perovskite thin film samples are determined to be 240 ± 10 and 370 ± 10 fs, respectively.

Elucidating the Unique Hot Carrier Cooling in Two-Dimensional Inorganic Halide Perovskites: The Role of Out-of-Plane Carrier-Phonon Coupling.

Two-dimensional (2D) halide perovskites represent the natural semiconductor quantum wells (QWs), which hold great promise for optoelectronics. However, due to the hybrid structure of Ruddlesden-Popper 2D perovskites, the intrinsic nature of hot-carrier kinetics remains shielded within. Herein, we adopt CsPbBr3 nanoplates as a model system to reveal the intrinsic carrier dynamics in inorganic perovskite QWs. Interestingly, we revealed an ultrafast and hot-phonon-bottleneck (HPB)-free carrier cooling in monodisperse CsPbBr3 QWs, which is in sharp contrast to the bulk and nanocrystalline perovskites. The absence of HPB was attributed to the efficient out-of-plane triplet-exciton-LO-phonon coupling in 2D perovskites because of the structural anisotropy. Accordingly, the HPB can be activated by shutting down the out-of-plane energy loss route through forming the layer-stacked perovskite superlattice. The controllable on and off of HPB may provide new possibilities in optoelectronic devices and these findings deepen the understanding of a hot-carrier cooling mechanism in 2D perovskites.

Harnessing Hot Phonon Bottleneck in Metal Halide Perovskite Nanocrystals via Interfacial Electron-Phonon Coupling.

Slow hot carrier (HC) cooling resulting from hot phonon bottleneck has been widely demonstrated in metal halide perovskites. Although manipulating HC kinetics in these materials is of both fundamental and technological importance, this task remains a daunting challenge. Here, via interfacial engineering, i.e., epitaxial growth of Cs4PbBr6 on CsPbBr3 nanocrystals (NCs), we have revealed an obvious shortening of HC cooling times, evidenced by transient absorption and ultrafast PL spectra. Collaborated with the longitudinal optical (LO) phonon model, theoretical calculations verify the breaking of the hot phonon bottleneck in CsPbBr3@Cs4PbBr6 and identify the interfacial electron-LO phonon coupling as the leading mechanism for the observed large tuning of HC cooling times. Especially, the participation of LO phonons from Cs4PbBr6 enables the efficient Klemens channel for hot phonon decay. Our findings establish an effective method to tailor HC dynamics in perovskite NCs, which could be conducive to improving the performance of optoelectronic applications.

Coexistence of Spin-Lattice Relaxation and Phonon-Bottleneck Processes in GdIII -Phthlocyaninato Triple-Decker Complexes under Highly Diluted Conditions.

Gd3+ complexes have been shown to undergo unusual slow magnetic relaxation processes similar to those of single-molecule magnets (SMMs), even though Gd3+ does not exhibit strong magnetic anisotropy. To reveal the origin of the slow magnetic relaxation of Gd3+ complexes, we have investigated the magnetic properties and heat capacities of two Gd3+ -phthalocyaninato triple-decker complexes, one of which has intramolecular Gd3+ -Gd3+ interactions and the other does not. It was found that the Gd3+ -Gd3+ interactions accelerate the magnetic relaxation processes. In addition, magnetically diluted samples, prepared by doping a small amount of the Gd3+ complexes into a large amount of diamagnetic Y3+ complexes, underwent dual magnetic relaxation processes. A detailed dynamic magnetic analysis revealed that the coexistence of spin-lattice relaxation and phonon-bottleneck processes is the origin of the dual magnetic relaxation processes.

Slow Magnetic Relaxation in Lanthanoid Crown Ether Complexes: Interplay of Raman and Anomalous Phonon Bottleneck Processes.

The combination of lanthanoid nitrates with 18-crown-6 (18-c-6) and tetrahalocatecholate (X4 Cat2- , X=Cl, Br) ligands has afforded two compound series [Ln(18-c-6)(X4 Cat)(NO3 )]⋅MeCN (X=Cl, 1-Ln; X=Br, 2-Ln; Ln=La, Ce, Nd, Gd, Tb, Dy). The 18-c-6 ligands occupy equatorial positions of a distorted sphenocorona geometry, whereas the charged ligands occupy the axial positions. The analogues of both series with Ln=Ce, Nd, Tb and Dy exhibit out-of-phase ac magnetic susceptibility signals in the presence of an applied magnetic field, indicative of slow magnetization relaxation. When diluted into a diamagnetic La host to reduce dipolar interactions, the Dy analogue exhibits slow relaxation up to 20 K in the absence of an applied dc field. Concerted magnetic measurements, EPR spectroscopy, and ab initio calculations have allowed elucidation of the mechanisms responsible for slow magnetic relaxation. A consistent approach has been applied to quantitatively model the relaxation data for different lanthanoid analogues, suggesting that the spin dynamics are governed by Raman processes at higher temperatures, transitioning to a dominant phonon bottleneck process as the temperature is decreased, with an observed T-6 rather than the usual T-2 dependence (T is temperature). This anomalous thermal dependence of the phonon bottleneck relaxation is consistent with anharmonic effects in the lattice dynamics, which was predicted by Van Vleck more than 70 years ago.

Auger-mediated electron relaxation is robust to deep hole traps: time-domain ab initio study of CdSe quantum dots.

By slowing down electron-phonon relaxation in nanoscale materials, one can increase efficiencies of solar energy conversion via hot electron extraction, multiple exciton generation, and elimination of exciton trapping. The elusive phonon bottleneck is hard to achieve, in particular, due to Auger-type energy exchange between electrons and holes. The Auger channel can be suppressed by hole trapping. Using time-domain ab initio simulation, we show that deep hole traps cannot fully eliminate the Auger channel. The simulations show that the hole-mediated electron relaxation is slowed down only by about 30%, which is in agreement with the recent experiments. The Auger energy exchange and hole relaxation to the trap state occur on similar time scales. Hole trapping is slow, because holes themselves experience a weak bottleneck effect. The study establishes the fundamental mechanisms of the electron and hole relaxation processes with and without hole traps. It shows that more sophisticated hole trapping strategies, for example, involving shell layers, are required in order to achieve the phonon bottleneck and to reduce electronic energy losses.

Slow Hot-Exciton Cooling and Enhanced Interparticle Excitonic Coupling in HgTe Quantum Dots.

Rapid hot-carrier/exciton cooling constitutes a major loss channel for photovoltaic efficiency. How to decelerate the hot-carrier/exciton relaxation remains a crux for achieving high-performance photovoltaic devices. Here, we demonstrate slow hot-exciton cooling that can be extended to hundreds of picoseconds in colloidal HgTe quantum dots (QDs). The energy loss rate is 1 order of magnitude smaller than bulk inorganic semiconductors, mediated by phonon bottleneck and interband biexciton Auger recombination (BAR) effects, which are both augmented at reduced QD sizes. The two effects are competitive with the emergence of multiple exciton generation. Intriguingly, BAR dominates even under low excitation fluences with a decrease in interparticle distance. Both experimental evidence and numerical evidence reveal that such efficient BAR derives from the tunneling-mediated interparticle excitonic coupling induced by wave function overlap between neighboring HgTe QDs in films. Thus, our study unveils the potential for realizing efficient hot-carrier/exciton solar cells based on HgTe QDs. Fundamentally, we reveal that the delocalized nature of quantum-confined wave function intensifies BAR. The interparticle excitonic coupling may cast light on the development of next-generation photoelectronic materials, which can retain the size-tunable confinement of colloidal semiconductor QDs while simultaneously maintaining high mobilities and conductivities typical for bulk semiconductor materials.

Hot Excitons Cool in Metal Halide Perovskite Nanocrystals as Fast as CdSe Nanocrystals.

The idea of phonon bottlenecks has long been pursued in nanoscale materials for their application in hot exciton devices, such as photovoltaics. Decades ago, it was shown that there is no quantum phonon bottleneck in strongly confined quantum dots due to their physics of quantum confinement. More recently, it was proposed that there are hot phonon bottlenecks in metal halide perovskites due to their physics. Recent work has called into question these bottlenecks in metal halide perovskites. Here, we compare hot exciton cooling in a range of sizes of CsPbBr3 nanocrystals from weakly to strongly confined. These results are compared to strongly confined CdSe quantum dots of two sizes and degrees of quantum confinement. CdSe is a model system as a ruler for measuring hot exciton cooling being fast, by virtue of its efficient Auger-assisted processes. By virtue of 3 ps time resolution, the hot exciton photoluminescence can now be directly observed, which is the most direct measure of the presence of hot excitons and their lifetimes. The hot exciton photoluminescence decays on nearly the same 2 ps time scale on both the weakly confined perovskite and the larger CdSe quantum dots, much faster than the 10 ps cooling predicted by transient absorption experiments. The smaller CdSe quantum dot has still faster cooling, as expected from quantum size effects. The quantum dots of perovskites show extremely fast hot exciton cooling, decaying faster than detection limits of <1 ps, even faster than the CdSe system, suggesting the efficiency of Auger processes in these metal halide perovskite nanocrystals and especially in their quantum dot form. These results across a range of sizes of nanocrystals reveal extremely fast hot exciton cooling at high exciton density, independent of composition, but dependent upon size. Hence these metal halide perovskite nanocrystals seem to cool heavily following quantum dot physics.

Giant Quantum Electrodynamic Effects on Single SiV Color Centers in Nanosized Diamonds.

Understanding and mastering quantum electrodynamics phenomena is essential to the development of quantum nanophotonics applications. While tailoring of the local vacuum field has been widely used to tune the luminescence rate and directionality of a quantum emitter, its impact on their transition energies is barely investigated and exploited. Fluorescent defects in nanosized diamonds constitute an attractive nanophotonic platform to investigate the Lamb shift of an emitter embedded in a dielectric nanostructure with high refractive index. Using spectral and time-resolved optical spectroscopy of single SiV defects, we unveil blue shifts (up to 80 meV) of their emission lines, which are interpreted from model calculations as giant Lamb shifts. Moreover, evidence for a positive correlation between their fluorescence decay rates and emission line widths is observed, as a signature of modifications not only of the photonic local density of states but also of the phononic one, as the nanodiamond size is decreased. Correlative light-electron microscopy of single SiVs and their host nanodiamonds further supports these findings. These results make nanodiamond-SiVs promising as optically driven spin qubits and quantum light sources tunable through nanoscale tailoring of vacuum-field fluctuations.

Breaking Phonon Bottlenecks through Efficient Auger Processes in Perovskite Nanocrystals.

The hot phonon bottleneck has been under intense investigation in perovskites. In the case of perovskite nanocrystals, there may be hot phonon bottlenecks as well as quantum phonon bottlenecks. While they are widely assumed to exist, evidence is growing for the breaking of potential phonon bottlenecks of both forms. Here, we perform state-resolved pump/probe spectroscopy (SRPP) and time-resolved photoluminescence spectroscopy (t-PL) to unravel hot exciton relaxation dynamics in model systems of bulk-like 15 nm nanocrystals of CsPbBr3 and FAPbBr3, with FA being formamidinium. The SRPP data can be misinterpreted to reveal a phonon bottleneck even at low exciton concentrations, where there should be none. We circumvent that spectroscopic problem with a state-resolved method that reveals an order of magnitude faster cooling and breaking of the quantum phonon bottleneck that might be expected in nanocrystals. Since the prior pump/probe methods of analysis are shown to be ambiguous, we perform t-PL experiments to unambiguously confirm the existence of hot phonon bottlenecks as well. The t-PL experiments reveal there is no hot phonon bottleneck in these perovskite nanocrystals. Ab initio molecular dynamics simulations reproduce experiments by inclusion of efficient Auger processes. This experimental and theoretical work reveals insight on hot exciton dynamics, how they are precisely measured, and ultimately how they may be exploited in these materials.

Direct Observation of Ultrafast Lattice Distortions during Exciton-Polaron Formation in Lead Halide Perovskite Nanocrystals.

The microscopic origin of slow hot-carrier cooling in lead halide perovskites remains debated and has direct implications for applications. Slow hot-carrier cooling of several picoseconds has been attributed to either polaron formation or a hot-phonon bottleneck effect at high excited carrier densities (>1018 cm-3). These effects cannot be unambiguously disentangled with optical experiments alone. However, they can be distinguished by direct observations of ultrafast lattice dynamics, as these effects are expected to create qualitatively distinct fingerprints. To this end, we employ femtosecond electron diffraction and directly measure the sub-picosecond lattice dynamics of weakly confined CsPbBr3 nanocrystals following above-gap photoexcitation. While we do not observe signatures of a hot-phonon bottleneck lasting several picoseconds, the data reveal a light-induced structural distortion appearing on a time scale varying between 380 and 1200 fs depending on the excitation fluence. We attribute these dynamics to the effect of exciton-polarons on the lattice and the slower dynamics at high fluences to slower sub-picosecond hot-carrier cooling, which slows down the establishment of the exciton-polaron population. Further analysis and simulations show that the distortion is consistent with motions of the [PbBr3]- octahedral ionic cage, and closest agreement with the data is obtained for Pb-Br bond lengthening. Our work demonstrates how direct studies of lattice dynamics on the sub-picosecond time scale can discriminate between competing scenarios proposed in the literature to explain the origin of slow hot-carrier cooling in lead halide perovskites.

Hot Carrier Cooling and Trapping in Atomically Thin WS2 Probed by Three-Pulse Femtosecond Spectroscopy.

Transition metal dichalcogenides (TMDs) have shown outstanding semiconducting properties which make them promising materials for next-generation optoelectronic and electronic devices. These properties are imparted by fundamental carrier-carrier and carrier-phonon interactions that are foundational to hot carrier cooling. Recent transient absorption studies have reported ultrafast time scales for carrier cooling in TMDs that can be slowed at high excitation densities via a hot-phonon bottleneck (HPB) and discussed these findings in the light of optoelectronic applications. However, quantitative descriptions of the HPB in TMDs, including details of the electron-lattice coupling and how cooling is affected by the redistribution of energy between carriers, are still lacking. Here, we use femtosecond pump-push-probe spectroscopy as a single approach to systematically characterize the scattering of hot carriers with optical phonons, cold carriers, and defects in a benchmark TMD monolayer of polycrystalline WS2. By controlling the interband pump and intraband push excitations, we observe, in real-time (i) an extremely rapid "intrinsic" cooling rate of ∼18 ± 2.7 eV/ps, which can be slowed with increasing hot carrier density, (ii) the deprecation of this HPB at elevated cold carrier densities, exposing a previously undisclosed role of the carrier-carrier interactions in mediating cooling, and (iii) the interception of high energy hot carriers on the subpicosecond time scale by lattice defects, which may account for the lower photoluminescence yield of TMDs when excited above band gap.

Enhanced Hot-Phonon Bottleneck Effect on Slowing Hot Carrier Cooling in Metal Halide Perovskite Quantum Dots with Alloyed A-Site.

A deep understanding of the effect of the A-site cation cross-exchange on the hot-carrier relaxation dynamics in perovskite quantum dots (PQDs) has profound implications on the further development of disruptive photovoltaic technologies. In this study, the hot carrier cooling kinetics of pure FAPbI3 (FA+ , CH(NH2 )2 + ), MAPbI3 (MA+ , CH3 NH3 + + ), CsPbI3 (Cs+ , Cesium) and alloyed FA0.5 MA0.5 PbI3 , FA0.5 Cs0.5 PbI3 , and MA0.5 Cs0.5 PbI3 QDs are investigated using ultrafast transient absorption (TA) spectroscopy. The lifetimes of the initial fast cooling stage (<1 ps) of all the organic cation-containing PQDs are shorter than those of the CsPbI3 QDs, as verified by the electron-phonon coupling strength extracted from the temperature-dependent photoluminescence spectra. The lifetimes of the slow cooling stage of the alloyed PQDs are longer under illumination greater than 1 sun, which is ascribed to the introduction of co-vibrational optical phonon modes in the alloyed PQDs. This facilitated efficient acoustic phonon upconversion and enhanced the hot-phonon bottleneck effect, as demonstrated by first-principles calculations.

Electrically Tunable Nonequilibrium Optical Response of Graphene.

The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, optical limiters, photodetectors, and transparent electrodes. The band structure of single layer graphene (SLG), with zero-gap, linearly dispersive conduction and valence bands, enables an easy control of the Fermi energy, EF, and of the threshold for interband optical absorption. Here, we report the tunability of the SLG nonequilibrium optical response in the near-infrared (1000-1700 nm/0.729-1.240 eV), exploring a range of EF from -650 to 250 meV by ionic liquid gating. As EF increases from the Dirac point to the threshold for Pauli blocking of interband absorption, we observe a slow-down of the photobleaching relaxation dynamics, which we attribute to the quenching of optical phonon emission from photoexcited charge carriers. For EF exceeding the Pauli blocking threshold, photobleaching eventually turns into photoinduced absorption, because the hot electrons' excitation increases the SLG absorption. The ability to control both recovery time and sign of the nonequilibrium optical response by electrostatic gating makes SLG ideal for tunable saturable absorbers with controlled dynamics.

Hot-Carrier Cooling in High-Quality Graphene Is Intrinsically Limited by Optical Phonons.

Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand the relaxation dynamics after photoexcitation. These dynamics contain a sub-100 fs thermalization phase, which occurs through carrier-carrier scattering and leads to a carrier distribution with an elevated temperature. This is followed by a picosecond cooling phase, where different phonon systems play a role: graphene acoustic and optical phonons, and substrate phonons. Here, we address the cooling pathway of two technologically relevant systems, both consisting of high-quality graphene with a mobility >10 000 cm2 V-1 s-1 and environments that do not efficiently take up electronic heat from graphene: WSe2-encapsulated graphene and suspended graphene. We study the cooling dynamics using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to substrate phonons is relatively inefficient in these systems, suggesting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a time scale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the high-energy tail of the hot-carrier distribution emit optical phonons. This creates a permanent heat sink, as carriers efficiently rethermalize. We develop a macroscopic model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights will guide the development of graphene-based optoelectronic devices.

Auger Suppression in n-Type HgSe Colloidal Quantum Dots.

Transient infrared photoluminescence upconversion is used to study the exciton dynamics in small-gap HgSe colloidal quantum dots in the 2000-6500 cm-1 (0.25-0.80 eV) range. The intraband mid-infrared photoluminescence decays show absent or greatly reduced Auger relaxation of biexcitons, proposed as a generic feature of weakly n-type quantum dots due to the sparse density of states in the conduction band. The nonradiative relaxation of the intraband carriers is instead consistent with near-field energy transfer to molecular vibrations of the surface ligands. In contrast, the interband near-infrared photoluminescence decays exhibit the typical distinct exciton and biexciton lifetimes with Auger coefficients comparable to other similarly sized quantum dots. Also observed are spectral and dynamical evidence of fine structure in the intraband transitions consistent with spin-orbit splitting of the electron P levels, and the emergence of plasmonic resonances in large particles.

Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications.

Low-dimensional III-V InAs/GaAs quantum dots (QDs) have been successfully applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900-1310-nm wavelength range for ultrafast pulsed laser applications benefitting from their broad bandwidth, wavelength flexibility, and low saturation fluence. However, it is very challenging to obtain a high-performance QD-SESAM working at the longer wavelength range around 1550 nm due to the huge obstacle to epitaxy growth of the QD structures. In this work, for the first time, it is revealed that, the InAs/GaAs QD system designed for the 1550-nm light emission range, the very weak carrier relaxation process from the capping layers (CLs) to QDs is mainly responsible for the poor emission performance, according to which we have developed a short-period superlattice (In0.20Ga0.80As/In0.30Ga0.70As)5 as the CL for the QDs and has realized ~ 10 times stronger emission at 1550 nm compared with the conventional InGaAs CL. Based on the developed QD structure, high-performance QD-SESAMs have been successfully achieved, exhibiting a very small saturation intensity of 13.7 MW/cm2 and a large nonlinear modulation depth of 1.6 %, simultaneously, which enables the construction of a 1550-nm femtosecond mode-locked fiber lasers with excellent long-term working stability.