A Time-Based Electronic Front-End for a Capacitive Particle Matter Detector.

This paper introduces the electronic interface for a capacitive airborne particle matter detector. The proposed circuit relies on two matched ring oscillators and a mixer to detect the frequency difference induced by the deposition of a particle onto an interdigitated capacitor, which constitutes the load of one of the oscillators. The output of the mixer is digitized through a simple counter. In order to compensate the oscillation frequency offset of the two ring oscillators due to process and mismatch variations, a capacitive trimming circuit has been implemented. The sensor is connected to host through an I2C interface for communication and configuration. The sensor has been implemented using a standard 130-nm CMOS technology by STMicroelectronics and occupies 0.12-mm2 die area. Experimental measurements using talcum powder show a sensitivity of 60 kHz/fF and a 3σ resolution equal to 165 aF.

Flexible, High-Speed CdSe Nanocrystal Integrated Circuits.

We report large-area, flexible, high-speed analog and digital colloidal CdSe nanocrystal integrated circuits operating at low voltages. Using photolithography and a newly developed process to fabricate vertical interconnect access holes, we scale down device dimensions, reducing parasitic capacitances and increasing the frequency of circuit operation, and scale up device fabrication over 4 in. flexible substrates. We demonstrate amplifiers with ∼7 kHz bandwidth, ring oscillators with <10 µs stage delays, and NAND and NOR logic gates.

Design of oscillatory neural networks by machine learning.

We demonstrate the utility of machine learning algorithms for the design of oscillatory neural networks (ONNs). After constructing a circuit model of the oscillators in a machine-learning-enabled simulator and performing Backpropagation through time (BPTT) for determining the coupling resistances between the ring oscillators, we demonstrate the design of associative memories and multi-layered ONN classifiers. The machine-learning-designed ONNs show superior performance compared to other design methods (such as Hebbian learning), and they also enable significant simplifications in the circuit topology. We also demonstrate the design of multi-layered ONNs that show superior performance compared to single-layer ones. We argue that machine learning can be a valuable tool to unlock the true computing potential of ONNs hardware.

Design, FPGA implementation and statistical analysis of a high-speed and low-area TRNG based on an AES s-box post-processing technique.

The statistical weakness problem occurring as a result of physical randomness is an important shortcoming of TRNGs. Post-processing techniques are generally used in the literature to overcome this shortcoming. In this study, the hardware implementation of Advanced Encryption Standard (AES) substitution box (s-box)-based novel post-processing technique is presented. The low-cost novel method is based on the substitution s-box transformations and can successfully remove the statistical weakness problem of TRNGs. The real-time verification of the proposed post-processing is done by applying ring oscillator (RO) based TRNG architecture in four different scenarios on Field Programmable Gate Array (FPGA) environment. Successful statistical results obtained from bias, correlation, entropy and NIST 800-22 tests confirm the usability of the proposed method for cryptographic purposes. The low area-energy requirement, practicality and compressionless properties of the post-processing provide better tradeoff for TRNG compared to known methods in the literature. For this reason, TRNG's performance is high. Furthermore, the presented study is important in demonstrating that s-boxes with good mathematical encryption properties can also be used for different cryptographic purposes.

Capacitive micro pressure sensor integrated with a ring oscillator circuit on chip.

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0-300 kPa.

Progress Report on "From Printed Electrolyte-Gated Metal-Oxide Devices to Circuits".

Printed electrolyte-gated oxide electronics is an emerging electronic technology in the low voltage regime (≤1 V). Whereas in the past mainly dielectrics have been used for gating the transistors, many recent approaches employ the advantages of solution processable, solid polymer electrolytes, or ion gels that provide high gate capacitances produced by a Helmholtz double layer, allowing for low-voltage operation. Herein, with special focus on work performed at KIT recent advances in building electronic circuits based on indium oxide, n-type electrolyte-gated field-effect transistors (EGFETs) are reviewed. When integrated into ring oscillator circuits a digital performance ranging from 250 Hz at 1 V up to 1 kHz is achieved. Sequential circuits such as memory cells are also demonstrated. More complex circuits are feasible but remain challenging also because of the high variability of the printed devices. However, the device inherent variability can be even exploited in security circuits such as physically unclonable functions (PUFs), which output a reliable and unique, device specific, digital response signal. As an overall advantage of the technology all the presented circuits can operate at very low supply voltages (0.6 V), which is crucial for low-power printed electronics applications.

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

Flexible low-voltage organic complementary circuits: finding the optimum combination of semiconductors and monolayer gate dielectrics.

Low-voltage p-channel and n-channel organic transistors with channel lengths down to 0.5 µm using four small-molecule semiconductors and ultra-thin dielectrics based on two different phosphonic acid monolayers are fabricated on plastic substrates and studied in terms of effective mobility, intrinsic mobility and contact resistance. For the optimum materials combination, flexible complementary circuits have signal delays of 3.1 µs at 5 V.