Enhancing growth and bioactive metabolites characteristics in Mentha pulegium L. via silicon nanoparticles during in vitro drought stress.

The development and production of secondary metabolites from priceless medicinal plants are restricted by drought stress. Mentha pulegium L. belongs to the Lamiaceae family and is a significant plant grown in the Mediterranean region for its medicinal and aesthetic properties. This study investigated the effects of three polyethylene glycol (PEG) (0, 5, and 10%) as a drought stress inducer and four silicon nanoparticle (SiNP) (0, 25, 50, and 100 ppm) concentrations as an elicitor to overcome the adverse effect of drought stress, on the growth parameters and bioactive chemical composition of M. pulegium L. plants grown in vitro. The experiment was performed as a factorial experiment using a completely randomized design (CRD) consisting of 12 treatments with two factors (3 PEG × 4 SiNPs concentrations), 6 replicates were used for each treatment for a total of 72 experimental units.The percentage of shoot formation was inversely proportional to the PEG concentration; for the highest PEG concentration, the lowest percentage of shoot formation (70.26%) was achieved at 10% PEG. SiNPs at 50 ppm enhanced shoot formation, the number of shoots, shoot height, fresh and dry weight, rosmarinic acid, total phenols, and 2,2-diphenyl-1-picrylhydrazyl (DPPH) scavenging activity. The methanol extract from M. pulegium revealed the presence of significant secondary metabolites using gas chromatography‒mass spectrometry (GC-MS). The principal constituents of the extract were limonene (2.51, 2.99%), linalool (3.84, 4.64%), geraniol (6.49, 8.77%), menthol (59.73, 65.43%), pulegone (3.76, 2.76%) and hexadecanoic acid methyl ester or methyl palmitate (3.2, 4.71%) for the 0 ppm SiNPs, PEG 0% and 50 ppm SiNPs, and PEG 10%, respectively. Most of the chemical components identified by GC‒MS in the methanol extract were greater in the 50 ppm SiNP and 10% PEG treatment groups than in the control group. SiNP improves drought tolerance by regulating biosynthesis and accumulating some osmolytes and lessens the negative effects of polyethylene glycol-induced drought stress.Based on the results, the best treatment for most of the parameters was 50 ppm SiNPs combined with 10% PEG, the morphological and chemical characteristics were inversely proportional to the PEG concentration, as the highest PEG concentration (10%) had the lowest results. Most parameters decreased at the highest SiNP concentration (100 ppm), except for the DPPH scavenging percentage, as there was no significant difference between the 50 and 100 ppm SiNPs.

A comprehensive calibration of integrated magnetron sputtering and plasma enhanced chemical vapor deposition for rare-earth doped thin films.

A new integrated deposition system taking advantage of magnetron sputtering and electron cyclotron-plasma enhanced chemical vapour deposition (IMS ECR-PECVD) is presented that mitigates the drawbacks of each fabrication system. This tailor-made system provides users with highly homogeneous and pure thin films with less undesired hydrogen and well-controlled rare-earth concentration compared to existing methods of rare-earth doping, such as metalorganic powders, sputtering, and ion implantation. We established the first comprehensive report on the deposition parameters of argon flow and sputtering power to achieve desired rare-earth concentrations in a wide composition range of terbium (Tb) doped-silicon oxide (Tb:SiOx) matrices including silicon-rich (x < 2), oxygen-rich (x > 2), and stoichiometric silicon oxide (x = 2). The deposition parameters to fabricate crystalline structure (Tb2Si2O7) in oxygen-rich samples are reported where Tb ions are optically active. IMS ECR-PECVD pushes the solubility limit of the rare-earth dopant in silicon films to 17 at.% for the desired future nanophotonic devices. Supplementary Information: The online version contains supplementary material available at 10.1557/s43578-023-01207-2.

Exploring the influence of silicon oxide microchips shape on cellular uptake using imaging flow cytometry.

Nano- and micro-carriers of therapeutic molecules offer numerous advantages for drug delivery, and the shape of these particles plays a vital role in their biodistribution and their interaction with cells. However, analysing how microparticles are taken up by cells presents methodological challenges. Qualitative methods like microscopy provide detailed imaging but are time-consuming, whereas quantitative methods such as flow cytometry enable high-throughput analysis but struggle to differentiate between internalised and surface-bound particles. Instead, imaging flow cytometry combines the best of both worlds, offering high-resolution imaging with the efficiency of flow cytometry, allowing for quantitative analysis at the single-cell level. This study focuses on fluorescently labelled silicon oxide microchips of various morphologies but related surface areas and volumes: rectangular cuboids and apex-truncated square pyramid microchips fabricated using photolithography techniques, offering a reliable basis for comparison with the more commonly studied spherical particles. Imaging flow cytometry was utilised to evaluate the effect of particle shape on cellular uptake using RAW 264.7 cells and revealed phagocytosis of particles with all shapes. Increasing the particle dose enhanced the uptake, while macrophage stimulation had minimal effect. Using a ratio particle:cell of 10:1 cuboids and spheres showed an uptake rate of approximately 50%, in terms of the percentage of cells with internalised particles, and the average number of particles taken up per cell ranging from about 1-1.5 particle/cell for all the different shapes. This study indicates how differently shaped micro-carriers offer insights into particle uptake variations, demonstrating the potential of non-spherical micro-carriers for precise drug delivery applications.

Hydrogenation of silicon-nanocrystals-embedded silicon oxide passivating contacts.

We investigate the effect of hydrogen passivation of dangling bonds in silicon oxide passivating contacts with embedded silicon nanocrystals (NAnocrystalline Transport path in Ultra-thin dielectrics for REinforced passivation contact, NATURE contact). We first investigated the differences in electrical properties of the samples after hydrogen gas annealing and hydrogen plasma treatment (HPT). The results show that the NATURE contact was efficiently passivated by hydrogen after HPT owing to the introduction of hydrogen radicals into the structure. Furthermore, we examined the dependence of process parameters such as HPT temperature, duration, and H2pressure, on the electrical properties and hydrogen depth profiles. As a result, HPT at 500 °C, 15 min, and 0.5 Torr resulted in a large amount of hydrogen inside the NATURE contact and the highest implied open-circuit voltage of 724 mV. Contact resistivity and surface roughness hardly increased when HPT was performed under the optimized condition, which only improved the passivation performance without deteriorating the electron transport properties of the NATURE contact.

Highly selective etching of SiNxover SiO2using ClF3/Cl2remote plasma.

Highly selective etching of silicon nitride over silicon oxide is one of the most important processes especially for the fabrication of vertical semiconductor devices including 3D NAND (Not And) devices. In this study, isotropic dry etching characteristics of SiNxand SiO2using ClF3/Cl2remote plasmas have been investigated. The increase of Cl2percent in ClF3/Cl2gas mixture increased etch selectivity of SiNxover SiO2while decreasing SiNxetch rate. By addition of 15% Cl to ClF3/Cl2, the etch selectivity higher than 500 could be obtained with the SiNxetch rate of ∼8 nm min-1, and the increase of Cl percent to 20% further increased the etch selectivity to higher than 1000. It was found that SiNxcan be etched through the reaction from Si-N to Si-F and Si-Cl (also from Si-Cl to Si-F) while SiO2can be etched only through the reaction from Si-O to Si-F, and which is also in extremely low reaction at room temperature. When SiNx/SiO2layer stack was etched using ClF3/Cl2(15%), extremely selective removal of SiNxlayer in the SiNx/SiO2layer stack could be obtained without noticeable etching of SiO2layer in the stack and without etch loading effect.

Cathodic electroorganic reaction on silicon oxide dielectric electrode.

The faradaic reaction at the insulator is counterintuitive. For this reason, electroorganic reactions at the dielectric layer have been scarcely investigated despite their interesting aspects and opportunities. In particular, the cathodic reaction at a silicon oxide surface under a negative potential bias remains unexplored. In this study, we utilize defective 200-nm-thick n+-Si/SiO2 as a dielectric electrode for electrolysis in an H-type divided cell to demonstrate the cathodic electroorganic reaction of anthracene and its derivatives. Intriguingly, the oxidized products are generated at the cathode The experiments under various conditions provide consistent evidence supporting that the electrochemically generated hydrogen species, supposedly the hydrogen atom, is responsible for this phenomenon. The electrogenerated hydrogen species at the dielectric layer suggests a synthetic strategy for organic molecules.

Efficient and Dense Electron Emission from a SiO2 Tunneling Diode with Low Poisoning Sensitivity.

We report a tunneling diode enabling efficient and dense electron emission from SiO2 with low poisoning sensitivity. Benefiting from the shallow SiO2 channel exposed to vacuum and the low electron affinity of SiO2 (0.9 eV), hot electrons tunneling into the SiO2 channel from the cathode of the diode are efficiently emitted into vacuum with much less restriction in both space and energy than those in previous tunneling electron sources. Monte Carlo simulations on the device performance show an emission efficiency as high as 87.0% and an emission density up to 3.0 × 105 A/cm2. By construction of a tunneling diode based on Si conducting filaments in electroformed SiO2, an emission efficiency up to 83.7% and an emission density up to 4.4 × 105 A/cm2 are experimentally realized. Electron emission from the devices is demonstrated to be independent of vacuum pressure from 10-4 to 10-1 Pa without poisoning.

Flash Solid-Solid Synthesis of Silicon Oxide Nanorods.

1D silicon-based nanomaterials, renowned for their unique chemical and physical properties, have enabled the development of numerous advanced materials and biomedical technologies. Their production often necessitates complex and expensive equipment, requires hazardous precursors and demanding experimental conditions, and involves lengthy processes. Herein, a flash solid-solid (FSS) process is presented for the synthesis of silicon oxide nanorods completed within seconds. The innovative features of this FSS process include its simplicity, speed, and exclusive use of solid precursors, comprising hydrogen-terminated silicon nanosheets and a metal nitrate catalyst. Advanced electron microscopy and X-ray spectroscopy analyses favor a solid-liquid-solid reaction pathway for the growth of the silicon oxide nanorods with vapor-liquid-solid characteristics.

Morphological and Elastic Transition of Polystyrene Adsorbed Layers on Silicon Oxide.

Herein we present a study on the formation of irreversibly adsorbed layer of polystyrene molecules on silicon oxide surfaces. Various scanning probe microscopy techniques have been employed to study both the morphology and the mechanical properties of these self-assembled thin polymeric layers. More in detail, standard contact mode, force versus distance spectroscopy and ultrasonic force microscopy have been employed to obtain spatially-resolved maps and, thus, observe the physisorption of polystyrene on native silicon oxide substrate in function of time. Thick films, spin coated from a toluene solution, have been annealed at a temperature above the glass transition for increasing time intervals, and finally thoroughly rinsed in toluene. We have found that isolated islands of adsorbed chains are already present after an annealing time of half an hour. Prolonged annealing determines a progressive increase of the covered areas, whereas the formation of a complete flat layer requires 24 h. The pattern observed is in line with expected evolution of an unstable system, corresponding to the phenomenon of spinodal dewetting. Adhesion measurements show that the films present a reduced snap-off and the formation of a meniscus between tip and surface for annealing time up to 8 h. On the other hand, elastic measurements allow us to observe a progressive increase of the elastic modulus, with a complete transition for annealing time above 20 h. This is indication that a dense packing of the polystyrene molecules occurs, in line with the predictions of current models on the kinetics of irreversible adsorption. LAY DESCRIPTION: Herein we present a study on the formation of irreversibly adsorbed layer of polystyrene molecules on silicon oxide surfaces. Various scanning probe microscopy techniques have been employed to study both the morphology and the mechanical properties of these self-assembled thin polymeric layers. Thick polystyrene films, spin coated from a toluene solution, have been thermally annealed at a temperature above the glass transition for increasing time intervals, and finally thoroughly rinsed in toluene. We have found that isolated islands of adsorbed chains are already present after an annealing time of half an hour. Prolonged annealing determines a progressive increase of the covered areas, whereas the formation of a complete flat layer requires twenty-four hours. The adsorption pattern observed is in line with expected evolution of an unstable system, corresponding to the phenomenon of spinodal dewetting. Adhesion and elastic measurements have allowed us to observe a progressive increase of the packing density of the polystyrene molecules, in agreement with the predictions of current models on the kinetics of irreversible adsorption.

Quantitative phase-mode electrostatic force microscopy on silicon oxide nanostructures.

Phase-mode electrostatic force microscopy (EFM-Phase) is a viable technique to image surface electrostatic potential of silicon oxide stripes fabricated by oxidation scanning probe lithography, exhibiting an inhomogeneous distribution of localized charges trapped within the stripes during the electrochemical reaction. We show here that these nanopatterns are useful benchmark samples for assessing the spatial/voltage resolution of EFM-phase. To quantitatively extract the relevant observables, we developed and applied an analytical model of the electrostatic interactions in which the tip and the surface are modelled in a prolate spheroidal coordinates system, fitting accurately experimental data. A lateral resolution of ∼60 nm, which is comparable to the lateral resolution of EFM experiments reported in the literature, and a charge resolution of ∼20 electrons are achieved. This electrostatic analysis evidences the presence of a bimodal population of trapped charges in the nanopatterned stripes.

Surface Oxidation of Nano-Silicon as a Method for Cycle Life Enhancement of Li-ion Active Materials.

Among the many studied Li-ion active materials, silicon presents the highest specific capacity, however it suffers from a great volume change during lithiation. In this work, we present two methods for the chemical modification of silicon nanoparticles. Both methods change the materials' electrochemical characteristics. The combined XPS and SEM results show that the properties of the generated silicon oxide layer depend on the modification procedure employed. Electrochemical characterization reveals that the formed oxide layers show different susceptibility to electro-reduction during the first lithiation. The single step oxidation procedure resulted in a thin and very stable oxide that acts as an artificial SEI layer during electrode operation. The removal of the native oxide prior to further reactions resulted in a very thick oxide layer formation. The created oxide layers (both thin and thick) greatly suppress the effect of silicon volume changes, which significantly reduces electrode degradation during cycling. Both modification techniques are relatively straightforward and scalable to an industrial level. The proposed modified materials reveal great applicability prospects in next generation Li-ion batteries due to their high specific capacity and remarkable cycling stability.

Electrical and Optical Properties of Silicon OxideLignin Polylactide (SiO2-L-PLA).

This paper presents a study on the electrical properties of new polylactide-basednanocomposites with the addition of silicon-dioxide-lignin nanoparticles and glycerine as a plasticizer.Four samples were prepared with nanoparticle mass fractions ranging between 0.01 to 0.15(0.01, 0.05, 0.10, and 0.15), and three samples were prepared without nanoparticle filler-unfilledand unprocessed polylactide, unfilled and processed polylactide, and polylactide with Fusabondand glycerine. All samples were manufactured using the melt mixing extrusion techniqueand injection molding. Only the unfilled and unprocessed PLA sample was directly preparedby injection molding. Dielectric properties were studied with broadband spectroscopy in a frequencyrange from 0.1 Hz to 1 MHz in 55 steps designed on a logarithmic scale and a temperature rangefrom 293.15 to 333.15 K with a 5 K step. Optical properties of nanocomposites were measuredwith UV-VIS spectroscopy at wavelengths from 190 to 1100 nm. The experimental data show thatthe addition of silicon-dioxide-lignin and glycerine significantly affected the electrical propertiesof the studied nanocomposites based on polylactide. Permittivity and electrical conductivity showa significant increase with an increasing concentration of nanoparticle filler. The optical properties arealso affected by nanofiller and cause an increase in absorbance as the number of silicon-dioxide-ligninnanoparticles increase.

Mechanistic Variants in Methane Activation Mediated by Gold(I) Supported on Silicon Oxide Clusters.

Cationic gold has been frequently identified as a suitable reactive species for activating methane in condensed-phase studies. However, it is far from clear how the coordination site manipulates the activity of such species. Herein, by anchoring AuI on silicon oxide cluster supports of variable sizes, the site-specific methane activation by AuI -Ox has been clarified by mass spectrometry in conjunction with quantum chemistry calculations. An unexpected mechanistic switch in C-H activation was identified for the cluster anions Au(SiO2 )n O- (n=1-3) that selectively activate one of the four C-H bonds of methane with different reaction efficiencies: a low efficiency was observed for the two-fold-coordinated gold ion (AuI, 2f ), which was anchored on an AuSiO3 - or AuSi2 O5 - cluster, through an oxidative addition mechanism (a homolytic process), and high efficiency was observed for the one-fold-coordinated gold ion (AuI, 1f ), which was supported on an AuSi3 O7 - cluster, through Lewis acid/base pairs mechanism (AuI, 1f ⋅⋅⋅O2- , a heterolytic process). Fine regulation of the 5d orbital level of the Au atom by the oxygen ligands accounted for the mechanistic difference between AuI, 2f and AuI, 1f species. The mechanistic understanding of the reactivity of AuI -Ox at a strictly molecular level can be used to clarify the dissimilar activity of gold anchored on different oxide supports.

Comparison of Cliff-Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films.

In this work, we compare the results of different Cliff-Lorimer (Cliff & Lorimer 1975) based methods in the case of a quantitative energy dispersive spectrometry investigation of light elements in ternary C-O-Si thin films. To determine the Cliff-Lorimer (C-L) k-factors, we fabricated, by focused ion beam, a standard consisting of a wedge lamella with a truncated tip, composed of two parallel SiO2 and 4H-SiC stripes. In 4H-SiC, it was not possible to obtain reliable k-factors from standard extrapolation methods owing to the strong CK-photon absorption. To overcome this problem, an extrapolation method exploiting the shape of the truncated tip of the lamella is proposed herein. The k-factors thus determined, were then used in an application of the C-L quantification procedure to a defect found at the SiO2/4H-SiC interface in the channel region of a metal-oxide field-effect-transistor device. As in this procedure, the sample thickness is required, a method to determine this quantity from the averaged and normalized scanning transmission electron microscopy intensity is also detailed. Monte Carlo simulations were used to investigate the discrepancy between experimental and theoretical k-factors and to bridge the gap between the k-factor and the Watanabe and Williams ζ-factor methods (Watanabe & Williams, 2006).

Multiple Physical Time Scales and Dead Time Rule in Few-Nanometers Sized Graphene-SiOx-Graphene Memristors.

The resistive switching behavior in SiOx-based phase change memory devices confined by few nanometer wide graphene nanogaps is investigated. Our experiments and analysis reveal that the switching dynamics is not only determined by the commonly observed bias voltage dependent set and reset times. We demonstrate that an internal time scale, the dead time, plays a fundamental role in the system's response to various driving signals. We associate the switching behavior with the formation of microscopically distinct SiOx amorphous and crystalline phases between the graphene electrodes. The reset transition is attributed to an amorphization process due to a voltage driven self-heating; it can be triggered at any time by appropriate voltage levels. In contrast, the formation of the crystalline ON state is conditional and only occurs after the completion of a thermally assisted structural rearrangement of the as-quenched OFF state which takes place within the dead time after a reset operation. Our results demonstrate the technological relevance of the dead time rule which enables a zero bias access of both the low and high resistance states of a phase change memory device by unipolar voltage pulses.

Thermal Methane Activation by the Metal-Free Cluster Cation [Si2 O4 ].

The thermal reaction of methane with the metal-free cluster cation [Si2 O4 ].+ has been examined by using Fourier transform-ion cyclotron resonance (FT-ICR) mass spectrometry. In addition to generating a methyl radical via hydrogen-atom abstraction, [Si2 O4 ].+ can selectively oxidize methane to formaldehyde. The mechanisms of these rather efficient reactions have been elucidated by high-level quantum-chemical calculations.

Catalytically Active Silicon Oxide Nanoclusters Stabilized in a Metal-Organic Framework.

Post-synthetic modification of the zirconium-based metal-organic framework (MOF) NU-1000 by atomic layer deposition (ALD), using tetramethoxysilane (Si(OMe)4 ) as a precursor, led to the incorporation and stabilization of silicon oxide clusters composed of only a few silicon atoms in the framework's pores. The resulting SiOx functionalized material (Si-NU-1000) was found to be catalytically active despite the inactivity of related bulk silicon dioxide (SiO2 ), thus demonstrating the positive effects of having nanosized clusters of SiOx . Moreover, Si-NU-1000 showed activity greater than that found for aluminum oxide based catalysts-oxides known for their high acidity-such as an aluminum oxide functionalized MOF (Al-NU-1000) and bulk γ-Al2 O3 . X-ray photoelectron spectroscopy and infrared spectroscopy measurements unmasked the electron donating nature of Si-NU-1000, explaining the unusual electronic properties of the nanosized SiOx clusters and supporting their high catalytic activity.

Oxidative stress and genotoxicity of an organic and an inorganic nanomaterial to Eisenia andrei: SDS/DDAB nano-vesicles and titanium silicon oxide.

In the past few years the number of studies on the toxic effects of nanomaterials (NMs) in the environment increased significantly. Nonetheless, the data is still scarce, since there is a large number of NMs and new ones are being developed each day. Soils are extremely important for life, and are easily exposed to the released NMs, thus enhanced efforts are needed to study the impacts on soil biota. The objective of the present work was to determine if different concentrations of two NMs, one inorganic (TiSiO4) and other organic (nano-vesicles of sodium sodecyl sulfate/ didodecyl dimethylammonium bromide - SDS/DDAB), are genotoxic to soil invertebrates. Additionally, it was intended to understand whether, in the event of occurring, genotoxicity was caused by the incapability of the cells to deal with the oxidative stress caused by these NMs. With that purpose, Eisenia andrei were exposed for 30 days to the artificial OECD soil contaminated with different concentrations of the NMs being tested. After the exposure, coelomocytes were extracted from earthworms and DNA damage was measured by the comet assay. The activity of antioxidant enzymes (e.g. glutathione peroxidase, glutathione reductase and glutathione-S-Transferase) and lipid peroxidation were also assessed. The results showed that both NMs were genotoxic, particularly TiSiO4 for which significant DNA damages were recorded for concentrations above 444mg of TiSiO4-NM/kg of soildw. Since no statistically significant differences were found in the tested antioxidant enzymes and in lipid peroxidation, the mechanism of genotoxicity of these NMs seemed to be unrelated with oxidative stress.

Metal-Free, Room-Temperature Oxygen-Atom Transfer in the N2 O/CO Redox Couple as Catalyzed by [Si2 Ox ].+ (x=2-5).

The thermal reduction of N2 O by CO mediated by the metal-free cluster cations [Si2 Ox ].+ (x=2-5) has been examined in the gas phase using Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry in conjunction with quantum chemical calculations. Three successive oxidation/reduction steps occur starting from [Si2 O2 ].+ and N2 O to form eventually [Si2 O5 ].+ ; the latter as well as the intermediate oxide cluster ions react sequentially with CO molecules to regenerate [Si2 O2 ].+ . Thus, full catalytic cycles occur at ambient conditions in the gas phase. Mechanistic aspects of these sequential redox processes have been addressed to reveal the electronic origins of these unparalleled reactions.

Efficient Room-Temperature Methane Activation by the Closed-Shell, Metal-Free Cluster [OSiOH](+) : A Novel Mechanistic Variant.

The closed-shell cluster ion [OSiOH](+) is generated in the gas phase and its reactivity towards the thermal activation of CH4 has been examined using Fourier transform-ion cyclotron resonance (FT-ICR) mass spectrometry in conjunction with state-of-the-art quantum chemical calculations. Quite unexpectedly at room temperature, [OSiOH](+) efficiently mediates C-H bond activation, giving rise to [SiOH](+) and [SiOCH3 ](+) with the concomitant formation of methanol and water, respectively. Mechanistic aspects for this unprecedented reactivity pattern are presented, and the properties of the [OSiOH](+) /CH4 couple are compared with those of the closed-shell systems [OCOH](+) /CH4 and [MgOH](+) /CH4 ; the last two couples exhibit an entirely different reactivity scenario.