Single-Nanowire Fuse for Ionization Gas Detection.

Local electric field enhancement is crucial to detect gases for an ionization gas sensor. Nanowires grown collectively along the identical lattice orientation have been claimed to show a strong tip effect in many previous studies. Herein, we propose a novel ionization gas detector structure by using a single crystalline silicon nanowire as one electrode that is placed above the prepatterned nanotips. A significant improvement of the local electric field in its radical direction was obtained leading to an ultralow operation voltage for gas breakdown. Different from the tip of the nanowire in the reported ionization gas sensors, the gaseous discharge current in this device flows towards the sidewall in the case of a trace amount of gas environment change. Technically, this discharge current brings about a sudden temperature rise followed by a fusion of the silicon nanowire. Such unique fusibility of a single nanowire in this gas detection device suggests a novel architecture that is portable and in-site executable and can be used as an integrated gas environmental monitor.

Photolithographically Constructed Single ZnO Nanowire Device and Its Ultraviolet Photoresponse.

A sparse ZnO nanowire array with aspect ratio of ca. 120 and growth rate of 1 µm/h was synthesized by controlling the density of seeds at the initial stage of nanowire growth. The spatially-separated nanowires were cut off from the growth substrate without breaking, and thus were useful in the construction of a single-nanowire device by photolithography. The device exhibited a linear current-voltage characteristic associated with ohmic contact between ZnO nanowire and electrodes. The device further demonstrated a reliable photoresponse with an IUV/Idark of ∼100 to ultraviolet light irradiation.

Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure.

We developed a new technique to fabricate single nanowire devices with reliable graphene/nanowire contacts using a position-controlled microtransfer and an embedded nanowire structure in a planar junction configuration. A thorough study of electrical properties and fabrication challenges of single p-GaAs nanowire/graphene devices was carried out in two different device configurations: (1) a graphene bottom-contact device where the nanowire-graphene contact junction is formed by transferring a nanowire on top of graphene and (2) a graphene top-contact device where the nanowire-graphene contact junction is formed by transferring graphene on top of an embedded nanowire. For the graphene top-contact devices, graphene-nanowire-metal devices, where graphene is used as one electrode and metal is the other electrode to a nanowire, and graphene-nanowire-graphene devices, where both electrodes to a nanowire are graphene, were investigated and compared with conventional metal/p-GaAs nanowire devices. Conventional metal/p-GaAs nanowire contact devices were further investigated in embedded and nonembedded nanowire device configurations. A significantly improved current in the embedded device configuration is explained with a "parallel resistors model" where the high-resistance parts with the metal-semiconductor Schottky contact and the low-resistance parts with noncontacted facets of the hexagonal nanowires are taken into consideration. Consistently, the nonembedded nanowire structure is found to be depleted much easier than the embedded nanowires from which an estimation for a fully depleted condition has also been established.