Sputtered ruthenium oxide coatings for neural stimulation and recording electrodes.

We have investigated the deposition and electrochemical properties of sputtered ruthenium oxide coatings for neural stimulation and recording electrodes. A combination of oxygen and water vapor was used as a reactive gas mixture during DC magnetron sputtering from a ruthenium metal target. The sputtering plasma was monitored by optical emission spectroscopy to determine the reactive species present and confirm the control of plasma chemistry by reactive gas flow rates into the deposition chamber. The effect of the O2 :H2 O gas ratio on the microstructure and electrochemical properties of the ruthenium oxide were studied in detail. We employed a combination of surface characterization techniques, including scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, to understand the relationship between plasma chemistry and the microstructure of the films produced under different gas flow conditions. Electrochemical characterization included cyclic voltammetry, electrochemical impedance spectroscopy, and voltage transient measurements, performed on planar ruthenium oxide electrodes with a geometric surface area of 1960 µm2 . At an O2 :H2 O gas flow rate ratio of 1:3, a cathodal charge-storage capacity per unit film thickness of 228.7 mC cm-2 µm-1 (median, Q1 = 134.5, Q3 = 236.6, n = 15) and a charge-injection capacity (0.6 V anodal interpulse bias) of 7.4 mC cm-2 (median, Q1 = 6.9, Q3 = 8.3, n = 15) were obtained in phosphate buffered saline. The charge-injection capacity of ruthenium oxide sputtered with water vapor in the reactive plasma is comparable with sputtered iridium oxide (SIROF) and higher than reported values for porous TiN, a commonly employed high-surface area stimulation electrode coating.

High-charge-capacity sputtered iridium oxide neural stimulation electrodes deposited using water vapor as a reactive plasma constituent.

The deposition and properties of sputtered iridium oxide films (SIROFs) using water vapor as a reactive gas constituent are investigated for their potential as high-charge-capacity neural stimulation electrodes. Systematic investigation through a series of optical and electrochemical measurements reveals that the incorporation of water vapor as a reactive gas constituent, along with oxygen, alters the reduction-oxidation (redox) state of the plasma as well as its morphology and the electrochemical characteristics, including the cathodal charge-storage capacity (CSCc ) and charge-injection capacity (CIC), of the SIROF. An apparent optimal O2 :H2 O gas ratio of 1:3 produced SIROF with a CSCc of 182.0 mC cm-2 µm-1 (median, Q1 = 172.5, Q3 = 193.4, n = 15) and a CIC of 3.57 mC cm-2 (median, Q1 = 2.97, Q3 = 4.58, n = 12) for 300-nm-thick films. These values are higher than those obtained with SIROFs deposited using no water vapor by a factor of 2.3 and 1.7 for the CSCc and CIC, respectively. Additionally, the SIROF showed minimal changes in electrochemical characteristics over 109 pulses of constant current stimulation and showed no indication of cytotoxicity toward primary cortical neurons in a cell viability assay. These results warrant investigation of the chronic recording and stimulation capabilities of the SIROF for implantable microelectrode arrays.