3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film.
Ultramicroscopy
; 109(5): 644-8, 2009 Apr.
Article
em En
| MEDLINE
| ID: mdl-19162400
ABSTRACT
The distribution of Mn in a Ga(0.963)Mn(0.037)As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga(0.963)Mn(0.037)As are uniformly dissolved without forming any nanometer-sized clusters.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2009
Tipo de documento:
Article