Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching.
Nano Lett
; 9(9): 3106-10, 2009 Sep.
Article
em En
| MEDLINE
| ID: mdl-19655719
ABSTRACT
An effective and low-cost method to fabricate hexagonally patterned, vertically aligned Si/Ge superlattice nanowires with diameters below 20 nm is presented. By combining the growth of Si/Ge superlattices by molecular beam epitaxy, prepatterning the substrate by anodic aluminum oxide masks, and finally metal-assisted chemical wet etching, this method generates highly ordered hexagonally patterned nanowires. This technique allows the fabrication of nanowires with a high area density of 10(10) wires/cm(2), including the control of their diameter and length.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Silício
/
Nanofios
/
Germânio
Idioma:
En
Ano de publicação:
2009
Tipo de documento:
Article