Blocking of indium incorporation by antimony in III-V-Sb nanostructures.
Nanotechnology
; 21(14): 145606, 2010 Apr 09.
Article
em En
| MEDLINE
| ID: mdl-20215649
ABSTRACT
The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2010
Tipo de documento:
Article