Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.
Nano Lett
; 10(11): 4316-20, 2010 Nov 10.
Article
em En
| MEDLINE
| ID: mdl-20945844
ABSTRACT
We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Transistores Eletrônicos
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Óxido de Zinco
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Processamento de Sinais Assistido por Computador
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Dispositivos de Armazenamento em Computador
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Nanotecnologia
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Nanoestruturas
Idioma:
En
Ano de publicação:
2010
Tipo de documento:
Article