Stress and interdiffusion during molecular beam epitaxy of Fe on As-rich GaAs(001).
J Phys Condens Matter
; 23(4): 042001, 2011 Feb 02.
Article
em En
| MEDLINE
| ID: mdl-21406874
ABSTRACT
Interdiffusion during growth of Fe on As-rich GaAs(001) substrates has been investigated by real time stress measurements. Compared to Ga-rich GaAs(001), interdiffusion processes are decisively reduced. The optimum growth temperature (characterized by abrupt interfaces, pseudomorphic growth and negligible intermixing) is found to lie below 50 °C. At higher growth temperatures interdiffusion effects increase and eventually lead to the formation of a compact crystalline alloy layer of presumably Fe(2 + x)Ga(1 - x), as evidenced by transmission electron microscopy and x-ray diffraction.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2011
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Article