Resistive random access memory utilizing ferritin protein with Pt nanoparticles.
Nanotechnology
; 22(21): 215201, 2011 May 27.
Article
em En
| MEDLINE
| ID: mdl-21451239
ABSTRACT
This study reports controlled single conductive paths found in resistive random access memory (ReRAM) formed by embedding Pt nanoparticles (Pt NPs) in NiO film. Homogeneous Pt NPs produced and placed by ferritin protein produce electric field convergence which leads to controlled conductive path formation. The ReRAM with Pt NPs shows stable switching behavior. A Pt NP density decrease results in an increase of OFF state resistance and decrease of forming voltage, whereas ON resistance was independent of the Pt NP density, which indicates that a single metal NP in a memory cell will achieve low power and stable operation.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Platina
/
Nanotecnologia
/
Nanopartículas Metálicas
/
Ferritinas
Tipo de estudo:
Clinical_trials
Idioma:
En
Ano de publicação:
2011
Tipo de documento:
Article