Field mapping with nanometer-scale resolution for the next generation of electronic devices.
Nano Lett
; 11(11): 4585-90, 2011 Nov 09.
Article
em En
| MEDLINE
| ID: mdl-21972919
In order to improve the performance of today's nanoscaled semiconductor devices, characterization techniques that can provide information about the position and activity of dopant atoms and the strain fields are essential. Here we demonstrate that by using a modern transmission electron microscope it is possible to apply multiple techniques to advanced materials systems in order to provide information about the structure, fields, and composition with nanometer-scale resolution. Off-axis electron holography has been used to map the active dopant potentials in state-of-the-art semiconductor devices with 1 nm resolution. These dopant maps have been compared to electron energy loss spectroscopy maps that show the positions of the dopant atoms. The strain fields in the devices have been measured by both dark field electron holography and nanobeam electron diffraction.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Radiometria
/
Semicondutores
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Análise de Falha de Equipamento
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Nanotecnologia
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Microscopia Eletrônica de Transmissão
Idioma:
En
Ano de publicação:
2011
Tipo de documento:
Article