Photocurrent generation in Ge nanocrystal/Si systems.
J Nanosci Nanotechnol
; 11(10): 9227-31, 2011 Oct.
Article
em En
| MEDLINE
| ID: mdl-22400328
ABSTRACT
We report on the generation of photocurrent in the visible and ultraviolet range from planar devices built from the Ge nanocrystals grown on a heavy n-doped Si(001) substrate covered with 5 nm thick thermally grown SiO2. These Ge nanostructures/SiO2/n(+)-Si devices are shown to generate photocurrent with an Incident-Photon-to-electron Conversion Efficiency (IPCE) spectral range depending on the Ge nanocrystals size. The increase of the IPCE value of our devices in the 350-600 nm range correlates well with the absorbance of Ge.
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MEDLINE
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En
Ano de publicação:
2011
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Article