A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology.
Opt Express
; 20(6): 5849-57, 2012 Mar 12.
Article
em En
| MEDLINE
| ID: mdl-22418462
ABSTRACT
We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4 V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at most 5 kHz, which is 30 Hz/µm2, at an excess bias of 4V when we measure 10 µm diameter active area structure. Afterpulsing probability, timing jitter, and temperature effects on DCR are also presented.
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01-internacional
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MEDLINE
Assunto principal:
Fotometria
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Semicondutores
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Reconhecimento Automatizado de Padrão
Idioma:
En
Ano de publicação:
2012
Tipo de documento:
Article