Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors.
Small
; 9(13): 2240-4, 2013 Jul 08.
Article
em En
| MEDLINE
| ID: mdl-23401376
ABSTRACT
Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2013
Tipo de documento:
Article