Electrical properties of Ta(Si)N films prepared by atomic layer deposition from tert-butylimido-tris-diethylamido tantalum, silane and hydrogen plasma.

ABSTRACT

Ta(Si)N films were prepared by atomic layer deposition (ALD) from tert-butylimido-tris-diethylamido tantalum (TBTDET), triethylsilane, and activated hydrogen. Triethylsilane was used as an ancillary reducing agent and as a silicon precursor. The effects of the addition of the triethylsilane at different hydrogen plasma pulse times and power on the electrical properties, particularly stability in air, were investigated. Longer plasma pulse times with high power were effective in decreasing resistivity and increasing stability in air. However, introduction of silane resulted in an increase in resistivity of the films regardless of the hydrogen plasma conditions.