Ultraviolet electroluminescence of light-emitting diodes based on single n-ZnO/p-AlGaN heterojunction nanowires.
Nano Lett
; 13(11): 5046-50, 2013 Nov 13.
Article
em En
| MEDLINE
| ID: mdl-24073683
ABSTRACT
We present successful fabrication of single n-ZnO/p-AlGaN heterojunction nanowires with excellent optoelectronic properties. Because of the formation of high-quality interfacial structure, heterojunction nanowire showed a diodelike rectification behavior and an electroluminescence (EL) ultraviolet (UV) emission centered at 394 nm from a single nanowire was observed when the injection current is 4 µA due to high exciton efficiency in the interfacial layer between ZnO and AlGaN. With the increase of the applied current, the EL peak at 5 µA becomes weaker revealing an optimal injection current of less than 5 µA. These results are expected to open up new application possibilities in nanoscale UV light-emitting devices based on single ZnO heterostructure.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2013
Tipo de documento:
Article