Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps.
Nanoscale Res Lett
; 8(1): 493, 2013 Nov 21.
Article
em En
| MEDLINE
| ID: mdl-24256997
Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [101_0] to infrequent [022_3] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of surface traps can be achieved simultaneously in ZnO nanowires via In doping. These unique properties make In-doped ZnO nanowire a potential material for photocatalysis application, which is demonstrated by the enhanced photocatalytic degradation of Rhodamine B.
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MEDLINE
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En
Ano de publicação:
2013
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Article